High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A

Transcription

1 V3000S, VF3000S, VB3000S, VI3000S High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 TMBS TO-220B ITO-220B 3 2 V3000S VF3000S 2 3 CSE 3 TO-263B TO-262 VB3000S VI3000S HETSIN 3 PRIMRY CHRCTERISTICS I F(V) 30 V RRM 00 V I FSM 250 V F at I F = V T J max. 50 C FETURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level, per J-STD-020, LF maximum peak of 245 C (for TO-263B package) Solder bath temperature 275 C maximum, 0 s, per JESD 22-B06 (for TO-220B, ITO-220B, and TO-262 package) Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICL PPLICTIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHNICL DT Case: TO-220B, ITO-220B, TO-263B and TO-262 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B02 E3 suffix meets JESD 20 class whisker test Polarity: s marked Mounting Torque: 0 in-lbs maximum MXIMUM RTINGS ( unless otherwise noted) PRMETER SYMBOL V3000S VF3000S VB3000S VI3000S UNIT Maximum repetitive peak reverse voltage V RRM 00 V Maximum average forward rectified current (fig. ) I F(V) 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 250 Non-repetitive avalanche energy at T J = 25 C, L = 90 mh E S 230 mj Peak repetitive reverse current at t p = 2 μs, khz, T J = 38 C ± 2 C I RRM.0 Voltage rate of change (rated V R ) dv/dt V/μs Isolation voltage (ITO-220B only) from terminal to heatsink t = min V C 500 V Operating junction and storage temperature range T J, T STG - 40 to + 50 C Document Number: 8894 For technical questions within your region, please contact one of the following: Revision: 23-Oct-09 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

2 verage Forward Current () V3000S, VF3000S, VB3000S, VI3000S ELECTRICL CHRCTERISTICS ( unless otherwise noted) PRMETER TEST CONDITIONS SYMBOL TYP. MX. UNIT Breakdown voltage I R = 0 m V BR 05 (minimum) - V I F = I F = Instantaneous forward voltage I F = I F = 5 V () F V I F = I F = Reverse current V R = 70 V 27 - μ - m V R = 00 V I (2) R μ m Notes () Pulse test: 300 μs pulse width, % duty cycle (2) Pulse test: Pulse width 40 ms THERML CHRCTERISTICS ( unless otherwise noted) PRMETER SYMBOL V3000S VF3000S VB3000S VI3000S UNIT Typical thermal resistance R θjc C/W ORDERING INFORMTION (Example) PCGE PREFERRED P/N UNIT WEIGHT (g) PCGE CODE BSE QUNTITY DELIVERY MODE TO-220B V3000S-E3/4W.875 4W 50/tube Tube ITO-220B VF3000S-E3/4W.805 4W 50/tube Tube TO-263B VB3000S-E3/4W.380 4W 50/tube Tube TO-263B VB3000S-E3/8W.380 8W 800/reel Tape and reel TO-262 VI3000S-E3/4W.455 4W 50/tube Tube RTINGS ND CHRCTERISTICS CURVES ( unless otherwise noted) Resistive or Inductive Load VF3000S V(B,I)3000S verage Power Loss (W) D = 0.2 D = 0. D = 0.3 D = 0.5 D = 0.8 D =.0 T 5 Mounted on Specific Heatsink Case Temperature ( C) 4 D = t p /T t p verage Forward Current () Fig. - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 23-Oct-09

3 Junction Capacitance (pf) Transient Thermal Impedance ( C/W) V3000S, VF3000S, VB3000S, VI3000S Instantaneous Forward Current () 00 T = 50 C Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 0 Junction to Case V(B,I)3000S t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Instantaneous Reverse Current (m) T = 50 C Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Transient Thermal Impedance ( C/W) 0 Junction to Case VF3000S t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Document Number: 8894 For technical questions within your region, please contact one of the following: Revision: 23-Oct-09 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 3

4 V3000S, VF3000S, VB3000S, VI3000S PCGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (0.54) MX (9.40) (9.4) TO-220B 0.54 (3.9) 0.48 (3.74) 0.3 (2.87) 0.03 (2.62) 0.85 (4.70) 0.75 (4.44) (.39) (.4) 45 REF (0.26) (9.75) ITO-220B (.93) REF (.93) REF (3.56) DI (3.7) DI (4.83) 0.70 (4.32) 0.0 (2.79) 0.00 (2.54) 0.35 (3.43) DI (3.08) DI (4.06) 0.40 (3.56) (.45) (.4) 0.05 (2.67) (2.4) (6.3) (5.87) (0.90) (0.70) 0.04 (2.65) (2.45) (5.20) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43).48 (29.6).8 (28.40) (4.22) (3.46) (0.56) 0.04 (0.36) (5.32) (4.55) 0.0 (2.79) 0.00 (2.54) (5.24) (4.73) (4.22) (3.46) (.45) (.4) (0.64) 0.05 (0.38) 0.05 (2.67) (2.4) (7.04) 0.65 (6.54) 0.9 (4.85) 0.7 (4.35) (.45) (.4) (0.89) (0.64) (5.2) 0.95 (4.95) 0.0 (2.79) 0.00 (2.54) (0.7) (0.5) TO (0.45) MX (4.70) 0.75 (4.44) 30 (TYP.) (REF.) (6.35) MIN (.40) (.9) (.40) (.4) (24.3) (23.37) (2.95) (.94) 0.40 (0.9) 0.38 (9.68) 0.60 (4.06) 0.40 (3.56) 0.0 (2.79) 0.00 (2.54) (.45) (.4) (4.22) (3.46) 0.04 (2.65) (2.45) (0.90) (0.70) (5.20) 0.95 (4.95) (0.56) 0.04 (0.35) TO-263B 0.4 (0.45) (9.65) (6.22) MIN (4.83) 0.60 (4.06) (.40) (.4) Mounting Pad Layout 0.42 (0.66) MIN (9.4) (8.3) (0.940) (0.686) 0.05 (2.67) (2.4) (5.85) 0.59 (5.00) (5.20) 0.95 (4.95) (.40) (.9) 0 to 0.0 (0 to 0.254) 0.0 (2.79) (2.29) 0.02 (0.53) 0.04 (0.36) 0.40 (3.56) 0.0 (2.79) (7.02) 0.59 (5.00) 0.08 (2.032) MIN (2.67) (2.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 23-Oct-09

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