Hyperfast Rectifier, 15 A FRED Pt

Transcription

1 VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors FETURES 2L TO-220C Base cathode 2 2L TO-220 FULL-PK Hyperfast recovery time, extremely low Q rr Low forward voltage drop 75 C operating junction temperature Low leakage current Fully isolated package (V INS = 2500 V RMS ) True 2 pin package Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC definition Designed and qualified according to JEDEC-JESD47 Cathode 3 node VS-ETX506-M3 PRODUCT SUMMRY Cathode 2 node VS-ETX506FP-M3 Package 2L TO-220C, 2L TO-220FP I F(V) 5 V R 600 V V F at I F 3.4 V t rr (typ.) 8 ns T J max. 75 C Diode variation Single die DESCRIPTION/PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the C/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 600 V T C = 4 C verage rectified forward current in DC I F(V) 5 FULL-PK T C = 7 C Non-repetitive peak surge current I FSM T J = 25 C 20 Operating junction and storage temperatures T J, T Stg - 65 to 75 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 00 μ I F = Forward voltage V F I F = 5, T J = 50 C V R = V R rated Reverse leakage current I R T J = 50 C, V R = V R rated μ Junction capacitance C T V R = 600 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Document Number: For technical questions within your region, please contact one of the following: Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

2 VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =, di F /dt = 00 /μs, V R = 30 V Reverse recovery time t rr I F = 5, di F /dt = 00 /μs, V R = 30 V T J = 25 C ns T J = 25 C Peak recovery current I RRM T I F = 5 J = 25 C di F /dt = 200 /μs T J = 25 C V R = 390 V T J = 25 C Reverse recovery charge Q rr T J = 25 C nc Reverse recovery time t rr I F = ns Peak recovery current I RRM T J = 25 C di F /dt = 800 /μs Reverse recovery charge Q rr V R = 390 V nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, R thjc junction to case FULL-PK Thermal resistance, junction to ambient R thj Typical socket mount C/W Typical thermal resistance, case to heatsink Weight Mounting torque Marking device R thcs Mounting surface, flat, smooth and greased Case style 2L TO-220C Case style 2L TO-220 FULL-PK g oz. 6 (5) - 2 (0) ETX506 ETX506FP kgf cm (lbf in) For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

3 VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors Instantaneous Forward Current - I F () 00 0 Tj = 75 C Tj = 25 C Tj = 50 C Forward Voltage Drop - V F (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Current - I R (µ) Junction Capacitance - C T (pf) C 50 C 25 C 00 C 75 C 50 C 25 C Reverse Voltage - V R (V) 00 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0 Thermal Impedance ZthJC ( C/W) 0. D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) 0.0 E-05 E-04 E-03 E-02 E-0 E+00 t, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: For technical questions within your region, please contact one of the following: Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 3 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

4 VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt 0 Thermal Impedance ZthJC ( C/W) D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) 0. E-05 E-04 E-03 E-02 E-0 E+00 E+0 E+02 t, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance Z thjc Characteristics (FULL-PK) llowable Case Temperature ( C) DC llowable Case Temperature ( C) DC verage Forward Current - IF (V) () verage Forward Current - IF (V) () Fig. 6 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Maximum llowable Case Temperature vs. verage Forward Current (FULL-PK) 40 verage Power Loss ( Watts ) RMS Limit D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.2 D = 0.5 DC verage Forward Current - IF (V) () Fig. 8 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

5 VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors If = 5, 25 C trr ( ns ) Qrr ( nc ) If = 5, 25 C If = 5, 25 C 00 5 typical value di F /dt (/µs ) di F /dt (/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt Fig. 0 - Typical Stored Charge vs. di F /dt 50 If = 5, 25 C typical value V R = 200 V L = 70 μh 0.0 Ω D.U.T. di F /dt adjust G D IRFP250 S Fig. - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr = t rr x I RRM 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 2 - Reverse Recovery Waveform and Definitions Document Number: For technical questions within your region, please contact one of the following: Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 5 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

6 VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt ORDERING INFORMTION TBLE Device code VS- E T X 5 06 FP -M Vishay Semiconductors product 2 - Circuit configuration: E = Single diode 3 - T = TO X = Hyperfast recovery time 5 - Current code: 5 = Voltage code: 06 = 600 V 7 - None = TO-220 FP = FULL-PK 8 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUBE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETX506-M ntistatic plastic tube VS-ETX506FP-M ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS 2L TO-220C 2L TO-220 FULL-PK 2L TO-220C 2L TO-220 FULL-PK For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T

7 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm Ø P E B F Q H D 0.50" REF. Term. 4 Ø 2.0 mm REF. 45 L b L b c 60 2 e J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX b b c D E e 5.08 BSC BSC F H J L L () Ø P Q Notes () Lead dimension and finish uncontrolled in L These dimensions are within allowable dimensions of JEDEC TO-220B rev. J outline dated Controling dimension: Inch Document Number: For technical questions concerning discrete products, contact: diodestech@vishay.com Revision: 2-Jan-0 For technical questions concerning module products, contact: indmodules@vishay.com

8 True 2 Pin TO-220 FULL-PK Outline Dimensions Vishay High Power Products DIMENSIONS in millimeters and inches Ø Q F E Q H D Q 2 θ L b L b e C J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX b b C D E e 5.08 typical typical F H J L L Ø Q Q Q θ Document Number: For technical questions concerning discrete products, contact: diodestech@vishay.com Revision: 22-Jan-0 For technical questions concerning module products, contact: indmodules@vishay.com

9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: -Mar-