HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

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1 PRODUCT SUMMRY V R 6 V V F at 15 at 25 C 1.7 V I F(V) 2 x 15 t rr (typical) 19 ns T J (maximum) 15 C Q rr (typical) 8 nc di (rec)m /dt (typical) at 125 C 16 /µs I RRM (typical) 4. HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 Base common cathode 2 2 Common node cathode node 1 3 TO-22B HF3T6CPbF Vishay High Power Products FETURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Guaranteed avalanche Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level vailable RoHS* COMPLINT BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HF3T6C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 15 per leg continuous current, the HF3T6C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF3T6C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V R 6 V per leg 15 Maximum continuous forward current I F T C = C per device 3 Single pulse forward current I FSM 15 Maximum repetitive forward current I FRM 6 T C = 25 C 74 Maximum power dissipation P D T C = C 29 W Operating junction and storage temperature range T J, T Stg - 55 to + 15 C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 947 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Jul-8 1

2 HF3T6CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 ELECTRICL SPECIFICTIONS PER LEG (T J = 25 C unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Cathode to anode breakdown voltage V BR I R = µ I F = 3 See fig I F = V I F = 15, T J = 125 C Maximum reverse V R = V R rated - 1. I RM See fig. 2 µ leakage current T J = 125 C, V R =.8 x V R rated - 4 Junction capacitance C T V R = 2 V See fig pf Series inductance L S Measured lead to lead 5 mm from package body nh DYNMIC RECOVERY CHRCTERISTICS PER LEG (T J = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5 and Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr I F = 1., di F /dt = 2 /µs, V R = 3 V t rr1 T J = 25 C t rr2 T J = 125 C I RRM1 T J = 25 C I RRM2 T J = 125 C I F = Q rr1 T J = 25 C di F /dt = 2 /µs Q rr2 T J = 125 C V R = 2 V di (rec)m /dt1 T J = 25 C di (rec)m /dt2 T J = 125 C ns nc /µs THERML - MECHNICL SPECIFICTIONS PER LEG PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (1.6 mm) for s C Junction to case, single leg conducting 1.7 Junction to case, both legs conducting Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thjc R thj Typical socket mount R thcs Mounting surface, flat, smooth and greased K/W g oz. Marking device Case style TO-22B HF3T6C 6. (5.) - 12 () kgf cm (lbf in) For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 25-Jul-8

3 HF3T6CPbF HEXFRED Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 15 T J = 15 C 1 T J= 15 C T J= 125 C T = 25 C J Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) T = 25 C J Forward Voltage Drop - V FM(V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Reverse Voltage - V (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Thermal Response (Z thjc ) 1.1 D = SINGLE PULSE t2 (THERML RESPONSE) Notes: 1. Duty factor D =t 1 / t 2 2. Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) t1 Document Number: 947 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Jul-8 3

4 HF3T6CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 8 I F = 3 I F = 15 I F = V R = 2V I F = 3 I F = 15 6 I F = V R = 2V di f /dt - (/µs) di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt (Per Leg) Fig. 7 - Typical Stored Charge vs. di F /dt (Per Leg) 25 V R= 2V V R= 2V 2 15 I F = 3 I F = 15 I F = 5. I F = 3 I F = 15 I F = 5. 5 di f/dt - (/µs) di f /dt - (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt (Per Leg) Fig. 8 - Typical di (rec)m /dt vs. di F /dt (Per Leg) For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 25-Jul-8

5 HF3T6CPbF HEXFRED Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 15 V R = 2 V L = 7 µh.1 Ω D.U.T. di F /dt adjust G D IRFP25 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions L = µh I L(PK) D.U.T. High-speed switch Current monitor R g = 25 Ω Freewheel diode + V d = 5 V Decay time V (VL) V R(RTED) Fig valanche Test Circuit and Waveforms Dimensions Part marking information LINKS TO RELTED DOCUMENTS Document Number: 947 For technical questions, contact: diodes-tech@vishay.com Revision: 25-Jul-8 5

6 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 11-Mar-11 1

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