Ultrafast Rectifier, 8 A FRED Pt
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1 Ultrafast Rectifier, 8 FRED Pt TO-263 (D 2 PK) ase cathode 2 TO FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C EC-Q101 qualified Material categorization: for definitions of compliance please see N/C node N/C node VS-8ETU04SPbF VS-8ETU04-1PbF PRODUCT SUMMRY Package TO-263 (D 2 PK), TO-262 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max. 175 C Diode variation Single die DESCRIPTION / PPLICTIONS FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 400 V verage rectified forward current I F(V) T C = 155 C 8 Non-repetitive peak surge current I FSM T C = 25 C 100 Repetitive peak forward current I FRM 16 Operating junction and storage temperatures T J, T Stg -65 to +175 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 100 μ I F = Forward voltage V F I F = 8, T J = 150 C V R = V R rated Reverse leakage current I R T J = 150 C, V R = V R rated μ Junction capacitance C T V R = 400 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 10-Jul-15 1 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
2 DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = 25 C ns I F = 1.0, di F /dt = 50 /μs, V R = 30 V T J = 125 C Peak recovery current I RRM T I F = 8 J = 25 C di F /dt = 200 /μs T J = 125 C V R = 200 V T J = 25 C Reverse recovery charge Q rr T J = 125 C nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, junction to case R thjc Thermal resistance, junction to ambient R thj Typical socket mount Mounting surface, flat, smooth Thermal resistance, case to heatsink R thcs and greased Weight Mounting torque Marking device Case style TO-263 (D 2 PK) Case style TO-262 C/W g oz. 6.0 (5.0) - 12 (10) 8ETU04S 8ETU04-1 kgf cm (lbf in) Revision: 10-Jul-15 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
3 I F - Instantaneous Forward Current () 10 1 T J = 175 C T J = 150 C T J = 25 C I R - Reverse Current (µ) T J = 175 C T J = 150 C T J = 125 C T J = 100 C T J = 25 C V F - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics V R - Reverse Voltage (V) 400 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 C T - Junction Capacitance (pf) 100 T J = 25 C V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 10 1 D = 0.50 t 1 D = D = 0.10 t 2 D = 0.05 Notes: Single pulse D = Duty factor D = t 1 /t (thermal resistance) D = Peak T J = P DM x Z thjc + T C t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Revision: 10-Jul-15 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
4 llowable Case Temperature ( C) See note (1) DC Square wave (D = 0.50) Rated V R applied t rr (ns) I F = 16 I F = 8 V R = 200 V T J = 125 C T J = 25 C I F(V) - verage Forward Current () di F /dt (/µs) Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 Q rr (nc) V R = 200 V T J = 125 C T J = 25 C I F = 16 I F = I F(V) - verage Forward Current () di F /dt (/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R Revision: 10-Jul-15 4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
5 V R = 200 V L = 70 μh 0.01 Ω di F /dt adjust G D IRFP250 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
6 ORDERING INFORMTION TLE Device code VS- 8 E T U 04 S TRL PbF product 2 - Current rating (8 ) 3 - E = single diode 4 - T = TO-220, D 2 PK 5 - U = ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - S = D 2 PK -1 = TO None = tube (50 pieces) TRL = tape and reel (left oriented, for D 2 PK package) TRR = tape and reel (right oriented, for D 2 PK package) 9 - PbF = lead (Pb)-free Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS Revision: 10-Jul-15 6 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
7 Outline Dimensions D 2 PK, TO-262 DIMENSIONS - D 2 PK in millimeters and inches Conforms to JEDEC outline D 2 PK (SMD-220) (3) L1 (2)(3) E 4 c2 (E) (D1) (3) Pad layout MIN. (0.43) 9.65 MIN. (0.38) D L2 2 x e H (2) 2 x b2 2 x b C Detail M M c ± M E1 View - H (3) (0.70) (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.103) 2.41 (0.096) (4) b1, b MIN. (0.15) ase Metal Gauge plane Lead assignments Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8:1 1 Seating plane (c) (b, b2) Section - and C - C Scale: None c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E , 3 b E b e 2.54 SC SC b H b L c L c L c L SC SC D L Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Document Number: For technical questions within your region, please contact one of the following: Revision: 31-Mar-09 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1
8 Outline Dimensions D 2 PK, TO-262 DIMENSIONS - TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum ) (2) (3) E (3) L1 c2 E D Seating plane D1(3) L2 1 2 C 3 C L (2) 2 x e M M Lead tip 3 x b2 3 x b c Lead assignments 1 Diodes 1. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Plating c E1 Section - (4) ase b1, b3 metal (b, b2) (3) c1 (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES b b b b c c c D D E , 3 E e 2.54 SC SC L L L Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except 1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
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Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Vishay Semiconductor/Diodes Division For any questions, you can email
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