VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A
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- Agnes Hensley
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1 Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material categorization: for definitions of compliance please see /doc?9992 APPLICATIONS PRIMARY CHARACTERISTICS I T(AV) 70 A V DRM /V RRM 200 V, 600 V V TM.25 V I GT 00 ma T J -40 C to +25 C Package Super TO-247 Circuit configuration Single SCR AC switches High voltage input rectification (soft start) High current crow-bar Other phase-control circuits Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS..PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I T(AV) Sinusoidal waveform 70 I RMS Lead current limitation 75 A V RRM /V DRM Range 200 to 600 V I TSM 00 A V T 00 A, T J = 25 C.4 V dv/dt 500 V/μs di/dt 50 A/μs T J -40 to +25 C VOLTAGE RATINGS PART NUMBER V RRM /V DRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-70TPS2PbF VS-70TPS6PbF I RRM /I DRM AT 25 C ma 5 Revision: 0-Aug-208 Document Number: 9439
2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current I T(AV) T C = 82 C, 80 conduction half sine wave 70 Maximum continuous RMS on-state I T(RMS) Lead current limitation 75 current as AC switch A Maximum peak, one-cycle 0 ms sine pulse, rated V RRM applied 930 I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied 00 Initial T J = T J Maximum I 2 t for fusing I 2 0 ms sine pulse, rated V RRM applied 4325 t maximum A 2 s 0 ms sine pulse, no voltage reapplied 65 Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied 6 50 A 2 s Low level value of threshold voltage V T(TO) 0.96 V High level value of threshold voltage V T(TO)2.2 T J = 25 C Low level value of on-state slope resistance r t 4.38 m High level value of on-state slope resistance r t Maximum peak on-state voltage V TM 00 A, T J = 25 C.4 V Maximum rate of rise of turned-on current di/dt T J = 25 C 50 A/μs Maximum holding current I H Anode supply = 6 V, resistive load, initial I T = A, T J = 25 C 200 Maximum latching current I L Anode supply = 6 V, resistive load, T J = 25 C 400 ma T J = 25 C V Maximum reverse and direct leakage current I RRM /I R = rated V RRM /V DRM.0 DRM T J = 25 C (T J = T J max., linear to 80 % 5 Maximum rate of rise of off-state voltage dv/dt T J = 25 C V DRM = R g - k = open) 500 V/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM 0 T = 30 μs Maximum average gate power P G(AV) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - V GM 0 T J = - 40 C.8 Maximum required DC gate voltage to trigger V GT T J = 25 C Anode supply = 6 V resistive load.5 V T J = 25 C. T J = 25 C Anode supply = 6 V resistive load 00 ma T J = - 40 C 50 T J = 25 C 80 Maximum DC gate voltage not to trigger V GD 0.25 V T J = 25 C, V DRM = rated value Maximum DC gate current not to trigger I GD 6 ma Revision: 0-Aug Document Number: 9439
3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T J -40 to +25 C Maximum storage temperature range T Stg -40 to +50 Maximum thermal resistance, R thjc DC operation 0.27 junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight Mounting torque Marking device R thja 40 R thcs Mounting surface, smooth and greased 0.2 C/W 6 g 0.2 oz. minimum 6 (5) kgf cm maximum 2 (0) (lbf in) Case style Super TO TPS2 70TPS6 R thj-hs CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION DEVICE UNITS VS-70TPS..PbF C/W Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC Maximum Allowable Case Temperature ( C) RthJC (DC) = 0.27 C/W Conduction Angle Maximum Allowable Case Temperature ( C) 30 RthJC (DC) = 0.27 C/W 20 DC 0 Conduction Period Average On-state Current (A) Average On-state Current (A) Fig. - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 0-Aug Document Number: 9439
4 Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle 20 Tj = 25 C Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave Forward Current (A) At any rated load condition and with rated V RRM applied following surge. Initial T J = 25 C at 60 Hz s at 50 Hz s VS-70TPS.. Series Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) RMS Limit Conduction Period Tj = 25 C Average On-state Current (A) DC Peak Half Sine Wave Forward Current (A) Maximum non-repetitive surge current versus pulse train duration. Initial T J = 25 C No voltage reapplied Rated V RRM reapplied Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current 000 Instantaneous On-state Current (A) Tj = 25 C 00 0 Tj = 25 C Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 0-Aug Document Number: 9439
5 Instantaneous Gate Voltage (V) 00 0 Rectangular gate pulse a) Recommended load line for rated di F /dt: 20 V, 30 Ω t r = 0.5 μs, t p > = 6 μs b) Recommended load line for < = 30 % rated di F /dt: 20 V, 65 Ω t r = μs, t p > = 6 μs V GD TJ = 25 C TJ = - 40 C TJ = 25 C (b) (a) (4) (3) () P GM = 00 W, t p = 500 μs (2) P GM = 50 W, t p = ms (3) P GM = 20 W, t p = 25 ms (4) P GM = 0 W, t p = 5 ms I GD Frequency Limited by P G(AV) Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics (2) () Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse Square Wave Pulse Duration (s) Steady State Value (DC Operation) 70TPS.. Series Fig. 9 - Thermal Impedance Z thjc Characteristics Revision: 0-Aug Document Number: 9439
6 ORDERING INFORMATION TABLE VS-70TPS2PbF, VS-70TPS6PbF High Voltage Series Device code VS- 70 T P S 6 PbF product 2 - Current rating (70 = 70 A) 3 - Circuit configuration: T = thyristor 4 - Package: P = super TO Type of silicon: S = standard recovery rectifier 6 - Voltage code x 00 = V RRM 7 - PbF = lead (Pb)-free 2 = 200 V 6 = 600 V ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-70TPS2PbF Antistatic plastic tube VS-70TPS6PbF Antistatic plastic tube Dimensions Part marking information LINKS TO RELATED DOCUMENTS /doc?95073 /doc?95070 Revision: 0-Aug Document Number: 9439
7 Outline Dimensions Super TO-247 DIMENSIONS in millimeters (inches) 2 x R 6.0 (0.632) 5.0 (0.595) A 5.50 (0.26) 4.50 (0.78) 0.3 (0.005) 2.5 (0.084).45 (0.058) (0.88) 9.80 (0.780) 4 C (0.67) 3.85 (0.52) B 4.80 (0.582) 3.80 (0.544) 5.45 (0.25) 2 x 3 x.30 (0.05).60 (0.063) 0.25 (0.00) M B A M.20 (0.047) 3 x 0.90 (0.035) 2.35 (0.092).65 (0.065) 0.25 (0.00) M B A M 3.90 (0.547) 3.30 (0.524) Ø.60 (0.063) MAX..30 (0.05) 0.70 (0.028) 6.0 (0.633) 5.50 (0.6) 4 Section E - E Lead assignments E E MOSFET IGBT - Gate 2 - Drain 3 - Source 4 - Drain - Gate 2 - Collector 3 - Emitter 4 - Collector Notes () Dimension and tolerancing per ASME Y4.5M-994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC outline TO-274AA Revision: 30-Mar-5 Document Number: 95073
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 9000
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