SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A

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1 SCR/SCR and SCR/Diode (MAGNAPAK Power Modules), 17 A, 25 A MAGNAPAK PRIMARY CHARACTERISTICS I T(AV) 17 A, 25 A Type Modules thyristor, standard Package MAGNAPAK FEATURES High voltage Electrically isolated base plate 35 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see DESCRIPTION This VSK series of MAGNAPAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as ACswitches when modules are connected in antiparallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.17.. VSK.25.. UNITS I T(AV) 85 C I T(RMS) I TSM 6 Hz Hz Hz I 2 t 6 Hz ka 2 s I 2 t ka 2 s V DRM /V RRM 4 to 16 4 to V T J Range 4 to 13 C A Revision: 26Jul218 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSVSK.17 VSVSK.25 VOLTAGE CODE V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFFSTATE BLOCKING VOLTAGE V V RSM, MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE V I RRM /I DRM AT 13 C MAXIMUM ma ONSTATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.17 VSK.25 UNITS Maximum average onstate current I T(AV) A conduction, half sine wave at case temperature C Maximum RMS onstate current I T(RMS) As AC switch t = 1 ms No voltage 5 85 Maximum peak, onecycle onstate t = 8.3 ms reapplied A I TSM nonrepetitive, surge current t = 1 ms % V RRM Sinusoidal t = 8.3 ms reapplied half wave, t = 1 ms No voltage initial T J = t = 8.3 ms reapplied T J maximum Maximum I 2 t for fusing I 2 t ka 2 s t = 1 ms % V RRM t = 8.3 ms reapplied Maximum I 2 t for fusing I 2 t t =.1 ms to 1 ms, no voltage reapplied ka 2 s (16.7 % x x I T(AV) < I < x I T(AV) ), Low level value or threshold voltage V T(TO) T J = T J maximum V High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum (16.7 % x x I T(AV) < I < x I T(AV) ), Low level value onstate slope resistance r t T J = T J maximum m High level value onstate slope resistance r t2 (I > x I T(AV) ), T J = T J maximum I TM = x I T(AV), T J = T J maximum, conduction, Maximum onstate voltage drop V TM average power = V T(TO) x I T(AV) r f x (I T(RMS) ) V Maximum holding current I H Anode supply = 12 V, initial I T = 3 A, T J = 25 C 5 5 Maximum latching current I L Anode supply = 12 V, resistive load = 1, gate pulse: 1 V, μs, T J = 25 C ma Revision: 26Jul218 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VSK.17 VSK.25 UNITS Typical delay time t d T J = 25 C, gate current = 1 A di g /dt = 1 A/μs 1. Typical rise time t r V d =.67 % V DRM 2. Typical turnoff time t q maximum; 5 to 15 I TM = 3 A; di/dt = 15 A/μs; T J = T J μs V R = 5 V; dv/dt = 2 V/μs; gate V, BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.17 VSK.25 UNITS Maximum peak reverse and I RRM, offstate leakage current I DRM T J = T J maximum 5 6 ma 5 Hz, circuit to base, all terminals shorted, RMS insulation voltage V INS 25 C, 1 s 3 V Critical rate of rise of offstate voltage dv/dt T J = T J maximum, exponential to 67 % rated V DRM V/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VSK.17 VSK.25 UNITS Maximum peak gate power P GM t p 5 ms, T J = T J maximum 1. Maximum average gate power P G(AV) f = 5 Hz, T J = T J maximum 2. W Maximum peak gate current I GM t p 5 ms, T J = T J maximum 3. A Maximum peak negative gate voltage V GT t p 5 ms, T J = T J maximum 5. Maximum required DC gate voltage to trigger V GT T J = 25 C Anode supply = 12 V, resistive load; Ra = 1 3. T J = 4 C 4. T J = T J maximum 2. Maximum required DC gate current to trigger I GT T J = 25 C Anode supply = 12 V, resistive load; Ra = 1 ma T J = 4 C 35 T J = T J maximum Maximum gate voltage that will not trigger V GD T J = T J maximum, rated V DRM applied.25 V Maximum gate current that willnot trigger I GD T J = T J maximum, rated V DRM applied 1. ma Maximum rate of rise of turnedon current di/dt T J = T J maximum, I TM = 4 A, rated V DRM applied V 5 A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VSK.17 VSK.25 UNITS Junction operating and storage T J, T Stg 4 to 13 C temperature range Maximum thermal resistance, R thjc DC operation junction to case K/W Typical thermal resistance, R thcs Mounting surface flat, smooth and greased.2.2 case to heatsink per module Mounting torque ± 1 % MAGNAPAK to heatsink busbar to MAGNAPAK A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 Nm Approximate weight Case style 5 g 17.8 oz. MAGNAPAK Revision: 26Jul218 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEVICES 6 6 VSK VSK Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC UNITS K/W Maximum Allowable Case Temperature ( C) VSK.17.. series R thjc (DC) =.17 K/W 6 Conduction Angle Maximum Average Onstate Power Loss (W) RMS limit Conduction angle VSK.17.. series 5 T J = 125 C Average Onstate Current (A) Average Onstate Current (A) Fig. 1 Current Ratings Characteristics Fig. 3 OnState Power Loss Characteristics Maximum Allowable Case Temperature ( C) VSK.17.. series R thjc (DC) =.17 K/W 6 Conduction Period DC Maximum Average Onstate Power Loss (W) DC 6 RMS limit Conduction period VSK.17.. series T J = 125 C Average Onstate Current (A) Average Onstate Current (A) Fig. 2 Current Ratings Characteristics Fig. 4 OnState Power Loss Characteristics Revision: 26Jul218 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Peak Half Sine Wave Onstate Current (A) At any rated load condition and with rated V RRM applied following surge. Initial T J = 13 C at 6 Hz.83 s at 5 Hz. s 25 VSK.17.. series 1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 Maximum NonRepetitive Surge Current Peak Half Sine Wave Onstate Current (A) Maximum nonrepetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial T J = 13 C No voltage reapplied Rated V RRM reapplied 25 VSK.17.. series Pulse Train Duration (s) Fig. 6 Maximum NonRepetitive Surge Current Maximum Total Onstate Power Loss (W) Conduction angle 6.25 K/ W.3 K/ W.35 K/W VSK.17.. series 5 per module T J = 13 C Total RMS Output Current (A).2 K/ W.16 K/ W.12 K/ W.8 K/ W Maximum Allowable Ambient Temperature ( C) Fig. 7 OnState Power Loss Characteristics R =.4 K/ W Delta R thsa Maximum Total Power Loss (W) (sine) (rect.) 2 x VSK.17.. series single phase bridge connected T J = 13 C.1 K/ W.12 K/ W.16 K/ W.2 K/ W.25 K/ W.35 K/ W.8 K/ W.6 K/ W Total Output Current (A).4 K/ W Maximum Allowable Ambient Temperature ( C) Fig. 8 OnState Power Loss Characteristics R =.2 K/ W Delta R thsa Revision: 26Jul218 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 16 Maximum Total Power Loss (W) (Rect) 3 x VSK.17.. series three phase bridge connected T J = 13 C.8 K/ W.1 K/ W.12 K/ W.16K/ W.25 K/ W.5 K/ W.3 K/ W R =.1 K/ W Delta R thsa Total Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 9 OnState Power Loss Characteristics Maximum Allowable Case Temperature ( C) VSK.25.. series R thjc (DC) =.125 K/W Conduction angle Maximum Average Onstate Power Loss (W) RMS limit Conduction Angle VSK.25.. series 5 T J = 13 C Average Onstate Current (A) Average Onstate Current (A) Fig. 1 Current Ratings Characteristics Fig. 12 OnState Power Loss Characteristics Maximum Allowable Case Temperature ( C) VSK.25.. Series R thjc (DC) =.125 K/W Conduction period DC Maximum Average Onstate Power Loss (W) DC 6 25 RMS limit 15 Conduction period VSK.25.. series 5 T J = 13 C Average Onstate Current (A) Average Onstate Current (A) Fig. 11 Current Ratings Characteristics Fig. 13 OnState Power Loss Characteristics Revision: 26Jul218 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Peak Half Sine Wave Onstate Current (A) At any rated load condition and with rated V RRM applied following surge. Initial T J = 13 C at 6 Hz.83 s at 5 Hz. s 4 VSK.25.. series Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 Maximum NonRepetitive Surge Current Peak Half Sine Wave Onstate Current (A) Maximum nonrepetitive surge Current vs. pulse train duration. Control of conduction may not be maintained. Initial T J = 13 C No voltage reapplied Rated V RRM reapplied 4 VSK.25.. series Pulse Train Duration (s) Fig. 15 Maximum NonRepetitive Surge Current Maximum Total Onstate Power Loss (W) Conduction angle 6 VSK.25.. series per module T J = 13 C.12 K/ W.16 K/ W.2 K/ W. 25 K/ W.3 K/ W.8 K/ W Total RMS Output Current (A) Maximum Allowable Ambient Temperature ( C).5 K/ W Fig. 16 OnState Power Loss Characteristics R =.2 K/ W Delta R thsa 14 Maximum Total Power Loss (W) (sine) (rect.) 2 x VSK.25.. series single phase bridge connected T J = 13 C.5 K/ W.6 K/ W.1 K/ W.4 K/ W.12 K/ W.16 K/ W.3 K/W Total Output Current (A).3 K/ W.2 K/ W Maximum Allowable Ambient Temperature ( C) Fig. 17 OnState Power Loss Characteristics R =.1 K/ W Delta R thsa Revision: 26Jul218 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Maximum Total Power Loss (W) (Rect) 3 x VSK.25.. series three phase bridge connected T J = 13 C.5 K/ W.6 K/ W.8 K/ W.1 K/ W.12 K/ W.16 K/ W.2 K/ W.25 K/ W.4 K/ W Total Output Current (A).3 K/ W Maximum Allowable Ambient Temperature ( C) Fig. 18 OnState Power Loss Characteristics R =.1 K/ W Delta R thsa 1 Instantaneous Forward Current (V) T J = 25 C T J = 13 C VSK.17 series Instantaneous Forward Voltage (V) Fig. 19 OnState Voltage Drop Characteristics Typical Reverse Recovery Charge Q rr (µc) VSK.17.. series T J = 13 C I TM = 8 A 5 A 3 A A A 5 A Rate Of Fall Of Onstate Current di/dt (A/µs) Fig. 21 Reverse Recovery Charge Characteristics Instantaneous Forward Current (V) 1 T J = 25 C T J = 13 C VSK.25 series Instantaneous Forward Voltage (V) Fig. 2 OnState Voltage Drop Characteristics Typical Reverse Recovery Charge Q rr (µc) 24 2 VSK.25.. series T TJ J = 13 C C I TM = 8 A Per per Junction junction 5 A 18 3 A A A 1 5 A Rate Of Fall Of Onstate Current di/dt (A/µs) Fig. 22 Reverse Recovery Charge Characteristics Revision: 26Jul218 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Instantaneous Gate Voltage (V) 1 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 2 V, 1 Ω; tr < = 1 µs b) Recommended load line for 3 % rated di/dt : 1 V, 2 Ω tr 1 µs VGD T J = 125 C (b) T J = 25 C IGD VSK.17/25 series Frequency limited by PG(AV) T J = 4 C (a) Instantaneous Gate Current (A) Fig. 23 Gate Characteristics (1) PGM = 1 W, tp = 4 ms (2) PGM = 2 W, tp = 2 ms (3) PGM = 4 W, tp = 1 ms (4) PGM = 6 W, tp =.66 ms (1) (2) (3) (4) Transient Thermal Impedance Z thjc (K/W) 1 Steady state value: R thjc =.17 K/W R thjc =.125 K/W VSK.17.. series (DC Operation).1 VSK.25.. series Square Wave Pulse Duration (s) Fig. 24 Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code VSVS KT 25 2 PbF product Circuit configuration (see dimensions link at the end of datasheet) Current rating Voltage code x = V RRM (see Voltage Ratings table) None = standard production PbF = lead (Pb)free Note To order the optional hardware go to Revision: 26Jul218 9 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ ~ Two SCRs doubler circuit KT VSKT... K1G1 G2K2 Available up to V, contact factory for different requirement ~ ~ SCR/diode doubler circuit, positive control KH VSKH... Available up to V, contact factory for different requirement K1G1 ~ ~ SCR/diode doubler circuit, negative control KL VSKL... Available up to V, contact factory for different requirement Two SCRs common cathodes KU VSKU... K1G1 G2K2 Available up to 1 V, contact factory for different requirement Two SCRs common anodes KV VSKV... K1G1 G2K2 Available up to 1 V, contact factory for different requirement Dimensions LINKS TO RELATED DOCUMENTS Revision: 26Jul218 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

11 Outline Dimensions MAGNAPAK DIMENSIONS in millimeters (inches) 3 screws M8 x (1.38) 28 (1.12) Ø (.24) 2 (.79) 38 (1.5) 5 (1.97) 9 (.35) 8 (3.15) 6 (.24) 115 (4.53) 32 (1.26) HEX (2.1) 52 (2.4) 1 (.39) 92 (3.62) Notes Dimensions are nominal Full engineering drawings are available on request UL identification number for gate and cathode wire: UL 1385 UL identification number for package: UL 94 V Document Number: 9586 For technical questions, contact: indmodules@vishay.com Revision: 3Aug7 1

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