Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

Transcription

1 Insulated Single Phase Hyperfast Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 65 V I O at T C = 123 C 6 A t rr 63 ns Type Modules - Bridge, Hyperfast Package SOT-227 Circuit configuration Single phase bridge FEATURES Hyperfast and soft recovery characteristic Electrically isolated base plate Simplified mechanical designs, rapid assembly High operation junction temperature (T J max. = 175 C) Designed and qualified for industrial and consumer level UL approved file E78996 Material categorization: for definitions of compliance please see DESCRIPTION The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. ABSOLUTE MAXIMUM RATINGS SYMBOL CHARACTERISTICS VALUES UNITS 6 A I O T C 123 C 5 Hz 36 I FSM A 6 Hz 377 I 2 t 5 Hz Hz 589 A 2 s V RRM 65 V T J -55 to +175 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM MAXIMUM AT T J MAXIMUM ma UFH6BA ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V BR I R = 25 μa Forward voltage, per diode V FM I F = 6 A V V R = 65 V - 1. Reverse leakage current, per leg I RM V R = 65 V, T J = 15 C μa RMS isolation voltage base plate V ISOL f = 5 Hz, any terminal to case, t = 1 min V Revision: 25-Apr Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum DC output current at case temperature I O Resistive or inductive load 6 A 123 C t = 1 ms No voltage 36 Maximum peak, one-cycle t = 8.3 ms reapplied 377 I non-repetitive forward current FSM t = 1 ms % V RRM 33 A t = 8.3 ms reapplied 317 Initial t = 1 ms No voltage 648 Maximum I 2 t for fusing I 2 t t = 8.3 ms reapplied 589 t = 1 ms % V RRM 458 A 2 s t = 8.3 ms reapplied 417 Maximum I 2 t for fusing I 2 t I 2 t for time t x = I 2 t x t x.1 t x 1 ms, V RRM = V 6.4 ka 2 s Low level of threshold voltage, per leg V F(T) V (16.7 % x x I F(AV) ) < I < x I F(AV), T J = T J maximum Low level value of forward slope resistance r f1.88 m High level of threshold voltage, per leg V F(T) V (I > x I F(AV) ), T J = T J maximum High level value of forward slope resistance r f m Maximum forward voltage, per diode V FM I F = 6 A 2.35 V RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical reverse recovery time, per diode Typical reverse recovery current, per diode Typical reverse recovery charge, per diode t rr I rr Q rr, I F = 5 A, V R = 2 V, T J = 125 C, I F = 5 A, V R = 2 V,, I F = 5 A, V R = 2 V, T J = 125 C, I F = 5 A, V R = 2 V,, I F = 5 A, V R = 2 V, T J = 125 C, I F = 5 A, V R = 2 V, ns A nc I FM di R dt t rr Q rr t I RM(REC) Typical junction capacitance C T V R = 65 V 77 pf THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Thermal resistance junction to case R thjc Thermal resistance case to heatsink R thcs Flat, greased surface C/W Weight g Mounting torque Torque to terminal (9.7) Nm (lbf.in) Torque to heatsink (11.5) Nm (lbf.in) Case style SOT-227 Revision: 25-Apr Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 3 25 I F (A) T J = 15 C T J = 125 C T J = 175 C Average Power Loss (W) Sine 18 Rect Instantaneous Forward Voltage (V) Average Forward Current (A) Fig. 1 - Typical Forward Voltage Characteristics Fig. 4 - Forward Power Loss Characteristics I R - Reverse Current (ma) 1 T J = 175 C.1 T J = 15 C T.1 J = 125 C V R - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode) Maximum Allowable Case Temperature ( C) C Sine 18 C Rect I F(AV) - Average Forward Current (A) Fig. 5 - Current Rating Characteristics (A) C T - Junction Capacitance (pf) 1 1 I rr (A) V R = 2 V I F = 5 A T J = 125 C V R - Reverse Voltage (V) di F /dt (A/μs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Diode) Fig. 6 - Typical Reverse Recovery Current vs. di F /dt Revision: 25-Apr Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 t rr (ns) V R = 2 V I F = 5 A T J = 125 C Q rr (nc) V R = 2 V I F = 5 A T J = 125 C di F /dt (A/μs) di F /dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Fig. 8 - Reverse Recovery Charge vs. di F /dt 1 Z thjc - Thermal Impedance Junction to Case ( C/W) DC t 1 - Rectangular Pulse Duration (s) Fig. 9 - Typical Reverse Recovery Current vs. di F /dt (Per Diode) Revision: 25-Apr Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 ORDERING INFORMATION TABLE Device code VS- UF H 6 B A product 2 - Ultra fast rectifier 3 - Hyper fast FRED Pt diffused 4 - Current rating (6 = 6 A) 5 - Circuit configuration: B = Single phase bridge 6 - Package indicator: A = SOT-227, standard insulated base 7 - Voltage rating (65 = 65 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING (AC) 4 3 (-) Lead Assignment 4 3 Single phase bridge B (+) 1 2 (AC) 1 2 Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 25-Apr Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Outline Dimensions SOT-227 Generation II DIMENSIONS in millimeters (inches) Ø 4.1 (.161) Ø 4.3 (.169) 38.3 (1.58) 37.8 (1.488) -A- 4 x M4 nuts 12.5 (.492) 13. (.512) 6.25 (.246) 6.5 (.256) 25.7 (1.12) 24.7 (.972) -B (.293) 7.6 (.299) 3.5 (1.2) 29.8 (1.173) 14.9 (.587) 15.2 (.598) R full 2.1 (.83) 2.2 (.87) 31.5 (1.24) 32.1 (1.264) 8.3 (.327) 4 x 7.7 (.33).25 (.1) M C A M B M 2.2 (.87) 1.9 (.75) 4.1 (.161) 4.5 (.177) -C-.13 (.5) 12.3 (.484) 11.7 (.46) 25. (.984) 25.5 (1.4) Note Controlling dimension: millimeter Revision: 2-Aug-12 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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