Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
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1 Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single switch FEATURES Trench IGBT technology Positive V CE(on) temperature coefficient Square RBSOA μs short circuit capability HEXFRED low Q rr, low switching energy T J maximum = 5 C Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () C T C = 9 C 93 T C = 5 C 39 Pulsed collector current I CM 7 Clamped inductive load current I LM 5 A T C = 5 C 98 Diode continuous forward current I F T C = 9 C 6 Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 35 Gate to emitter voltage V GE ± V T C = 5 C 658 Power dissipation, IGBT P D T C = 9 C 36 T C = 5 C 43 Power dissipation, diode P D T C = 9 C 94 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do not exceed the maximum temperature of terminals Revision: 3-Apr-8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS-GT8DAU ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C =.6 ma - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = 8 A, V V GE = 5 V, I C = 8 A V GE = 5 V, I C = 8 A, T J = 5 C Gate threshold voltage V GE(th) V CE = V GE, I C =.6 ma Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C =.6 ma (5 C to 5 C) mv/ C V GE = V, V CE = V -. μa Collector to emitter leakage current I CES V GE = V, V CE = V, ma Forward voltage drop V FM I F = 8 A, V GE = V, V I F = 8 A, V GE = V I F = 8 A, V GE = V, T J = 5 C Gate to emitter leakage current I GES V GE = ± V - - ± na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g V GE = -5 V, V GE = ± 5 V Input capacitance C ies V CE = 5 V, V GE = V, f = MHz Reverse transfer capacitance C res pf Turn-on switching loss E on IC = 8 A, V CC = 6 V, V GE = 5 V, Turn-off switching loss E off R g =. L = 5 μh, mj Total switching loss E tot Turn-on switching loss E on Energy losses Turn-off switching loss E include tail and off mj diode recovery Total switching loss E tot I = 8 A, V = 6 V, V GE = 5 V, Diode used C CC Turn-on delay time t d(on) R g =. L = 5 μh, HFA6PB Rise time t r Turn-off delay time t d(off) ns Fall time t f Reverse bias safe operating area RBSOA T J = 5 C, I C = 5 A, R g =. V GE = 5 V to V, V CC = 8 V, V P = V, L = 5 μh Fullsquare Diode reverse recovery time t rr ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V A Diode recovery charge Q rr nc Diode reverse recovery time t rr ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V rr = 4 V, A Diode recovery charge Q rr nc Short circuit safe operating area SCSOA V GE = 5 V, V CC = 8 V, V CE max.= V, T J = 5 C μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT R thjc Diode C/W Case to heatsink R thcs Flat, greased surface -. - Weight g Mounting torque Torque to terminal - -. (9.7) Nm (lbf. in) Torque to heatsink (.5)) Nm (lbf. in) Case style SOT-7 Revision: 3-Apr-8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS-GT8DAU V GE = 5 V 3. A I C (A) 8 6 T J = 5 C V CE (V) A 4. 4 A V CE (V) T J ( C) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature V CE = V 6 I C (A) V GE = 8 V V GE = V V GE = 9 V V GE = 5 V I C (A) V CE (V) V GE (V) Fig. - Typical IGBT Output Characteristics, Fig. 5 - Typical IGBT Transfer Characteristics 8 7. Allowable Case Temperature ( C) DC V GEth (V) I C - Continuous Collector Current (A) I C (ma) Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: 3-Apr-8 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS-GT8DAU T J = 5 C 6 5 I CES (ma)... Energy (mj) 4 3 Eoff Eon V CES (V) I C (A) Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current Fig. - Typical IGBT Energy Loss vs I C, V CC = 6 V, R g =., V GE = 5 V, L = 5 μh t f I F (A) T J = 5 C Switching Time (ns) t d(off) t d(on) t r V FM (V) I C (A) Fig. 8 - Typical Diode Forward Characteristics Fig. - Typical IGBT Switching Time vs. I C, V CC = 6 V, R g =., V GE = 5 V, L = 5 μh 8 9 Allowable Case Temperature ( C) DC Energy (mj) Eon Eoff I F - Continuous Forward Current (A) R g ( Ω) Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. - Typical IGBT Energy Loss vs. R g, V CC = 6 V, I C = 8 A, V GE = 5 V, L = 5 μh Revision: 3-Apr-8 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS-GT8DAU 3 t d(off) 5 Switching Time (ns) t f t d(on) t r I rr (A) R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Switching Time vs. R g, V CC = 6 V, I C = 8 A, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A t rr (ns) 5 5 Q rr (nc) di F /dt (A/μs) Fig. 4 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A di F /dt (A/μs) Fig. 6 - Typical Diode Reverse Recovery Charge vs. di F /dt V rr = 4 V, I F = 5 A I CE - Collector-Emitter Current (A) Limited by V CE(on) t p = μs t p = ms t p = 6 ms T A = 5 C T J = 5 C V GE = 5 V Single pulse. V CE - Collector-Emitter Voltage (V) Fig. 7 - IGBT Safe Operating Area Revision: 3-Apr-8 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS-GT8DAU Z thjc - Thermal Impedance Junction to Case ( C/W) DC..... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W) DC t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) 3 I C - Collector Curent (A) V CE (V) Fig. - IGBT Reverse Bias SOA V GE = 5 V, T J = 5 C Revision: 3-Apr-8 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VS-GT8DAU 5 V V L V C () D.U.T. R = V CC I CM D.U.T. + - V CC R g Note: () Driver same type as D.U.T.; V C = 8 % of V CE max. Due to the 5 V power supply, pulse width, and inductor will increase to obtain I D Fig. - Clamped Inductive Load Test Circuit Fig. - Pulsed Collector Current Test Circuit Diode clamp / D.U.T. L V R g D.U.T. / driver + - V CC Fig. 3 - Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 4 - Switching Loss Waveforms Test Circuit Revision: 3-Apr-8 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 VS-GT8DAU ORDERING INFORMATION TABLE Device code VS- G T 8 D A U product - Insulated gate bipolar transistor (IGBT) - Trench IGBT technology - Current rating (8 = 8 A) - Circuit configuration (D = single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed / type (U = ultrafast) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch with antiparallel diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 3-Apr-8 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
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