EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A

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1 EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 3 A VS-ENQ3L1S EMIPAK-1B (package example) PRODUCT SUMMARY TRENCH IGBT 1 V STAGE V CES 1 V V CE(ON) typical at I C = 3 A 2.12 V I C at T C = 2 C 3 A TRENCH IGBT 6 V STAGE V CES 6 V V CE(ON) typical at I C = 3 A 1.42 V I C at T C = 6 C 3 A Speed 8 khz to 3 khz Package EMIPAK-1B Circuit 3-levels neutral point clamp topology FEATURES Ultrafast Trench IGBT technology HEXFRED and silicon carbide diode technology PressFit pins technology Exposed Al 2 O 3 substrate with low thermal resistance Low internal inductances PressFit pins locking technology. Patent # US B2 UL approved file E78996 Material categorization: for definitions of compliance please see DESCRIPTION VS-ENQ3L1S is an integrated solution for a neutral point clamp topology in a single package. The EMIPAK-1B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T J 15 Storage temperature range T Stg -4 to +15 C RMS isolation voltage V ISOL T J = C, all terminals shorted, f = 5 Hz, t = 1 s V Q1 - Q4 TRENCH IGBT 1 V Collector to emitter voltage V CES 1 Gate to emitter voltage V GES ± 3 V Pulsed collector current I CM 1 Clamped inductive load current I (1) LM 1 A Continuous drain current I C T C = 8 C 4 T C = C 61 T SINK = 8 C 21 T C = C 216 Power dissipation P D T C = 8 C 121 PATENT(S): This Vishay product is protected by one or more United States and International patents. Revision: 16-Jun-16 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT A W

2 VS-ENQ3L1S ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Q2 - Q3 TRENCH IGBT 6 V Collector to emitter voltage V CES 6 Gate to emitter voltage V GES ± V Pulsed collector current I CM 13 Clamped inductive load current I (2) LM 13 A Continuous collector current I C T C = 8 C 42 A T C = C 64 T SINK = 8 C T C = C 174 Power dissipation P D T C = 8 C 97 W D1 - D4 HEXFRED ANTIPARALLEL DIODE Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = C 18 A Diode continuous forward current I F T C = 8 C 3 A T C = C 46 T SINK = 8 C 17 T C = C 187 Power dissipation P D T C = 8 C 5 W D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = C 15 A Diode continuous forward current I F T C = 8 C 28 T C = C 4 T SINK = 8 C T C = C 14 Power dissipation P D T C = 8 C 79 Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 6 V, V GE = 15 V, L = 5 μh, R g = 4.7, T J = 15 C (2) V CC = 3 V, V GE = 15 V, L = 5 μh, R g = 4.7, T J = 15 C A W ELECTRICAL SPECIFICATIONS (T J = C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 TRENCH IGBT 1 V Collector to emitter breakdown voltage BV CES V GE = V, I C = μa V GE = 15 V, I C = 3 A Collector to emitter voltage V CE(ON) V GE = 15 V, I C = 3 A, V Gate threshold voltage V GE(th) V CE = V GE, I C = 1. ma Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C = 1 ma ( C to 1 C) mv/ C Forward transconductance g fe V CE = V, I C = 3 A S Transfer characteristics V GE V CE = V, I C = 3 A V V GE = V, V CE = 1 V Zero gate voltage collector current I CES V GE = V, V CE = 1 V, ma Gate to emitter leakage current I GES V GE = ± 3 V, V CE = V - - ± na Revision: 16-Jun-16 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-ENQ3L1S ELECTRICAL SPECIFICATIONS (T J = C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q2 - Q3 TRENCH IGBT 6 V Collector to emitter breakdown voltage BV CES V GE = V, I C = 15 μa V GE = 15 V, I C = 3 A Collector to emitter voltage V CE(ON) V GE = 15 V, I C = 3 A, V Gate threshold voltage V GE(th) V CE = V GE, I C = 1.4 ma Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C = 1 ma ( C to 1 C) mv/ C Forward transconductance g fe V CE = V, I C = 3 A S Transfer characteristics V GE V CE = V, I C = 3 A - - V V GE = V, V CE = 6 V Zero gate voltage collector current I CES V GE = V, V CE = 6 V, ma Gate to emitter leakage current I GES V GE = ± V, V CE = V - - ± na D1 - D4 ANTIPARALLEL DIODE I F = A V Forward voltage drop V FM I F = A, D2 - D3 ANTIPARALLEL DIODE I F = A Forward voltage drop V FM I F = A V SWITCHING CHARACTERISTICS (T J = C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 TRENCH IGBT (WITH FREEWHEELING D1 - D4 ANTIPARALLEL DIODE) Total gate charge (turn-on) Q g IC = 3 A Gate to emitter charge (turn-on) Q ge V CC = 6 V nc Gate to collector charge (turn-on) Q gc V GE = 15 V Turn-on switching loss E ON Turn-off switching loss E OFF I C = 3 A mj Total switching loss E TOT V CC = 6 V Turn-on delay time t d(on) V GE = 15 V Rise time t r R g = Turn-off delay time t d(off) L = 5 μh (1) ns Fall time t f Turn-on switching loss E ON Turn-off switching loss E OFF IC = 3 A mj Total switching loss E TOT V CC = 6 V 2.24 Turn-on delay time t d(on) V GE = 15 V R g = Rise time t r L = 5 μh Turn-off delay time t d(off) (1) ns Fall time t f Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f = 1 MHz Reverse bias safe operating area RBSOA T J = 15 C, I C = 1 A, V CC = 6 V, V P = 1 V, R g = 4.7, V GE = 15 V to V Fullsquare Revision: 16-Jun-16 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-ENQ3L1S SWITCHING CHARACTERISTICS (T J = C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q2 - Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 3ETH6) Total gate charge (turn-on) Q g IC = 48 A Gate to emitter charge (turn-on) Q ge V CC = 4 V nc Gate to collector charge (turn-on) Q gc V GE = 15 V - - Turn-on switching loss E ON Turn-off switching loss E OFF I C = 3 A mj Total switching loss E TOT V CC = 3 V Turn-on delay time t d(on) V GE = 15 V Rise time t r R g = Turn-off delay time t d(off) L = 5 μh (1) ns Fall time t f Turn-on switching loss E ON Turn-off switching loss E OFF IC = 3 A mj Total switching loss E TOT V CC = 3 V Turn-on delay time t d(on) V GE = 15 V R g = Rise time t r L = 5 μh Turn-off delay time t d(off) (1) ns Fall time t f Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f = 1 MHz Reverse bias safe operating area RBSOA T J = 15 C, I C = 13 A V CC = 3 V, V P = 6 V Fullsquare R g = 4.7, V GE = 15 V to V D1 - D4 ANTIPARALLEL DIODE Diode reverse recovery time t rr VR = 4 V ns Diode peak reverse current I rr I F = A A Diode recovery charge Q rr dl/dt = 5 A/μs nc Diode reverse recovery time t rr VR = 4 V ns Diode peak reverse current I rr I F = A A Diode recovery charge Q rr dl/dt = 5 A/μs, nc D2 - D3 ANTIPARALLEL DIODE Diode reverse recovery time t rr VR = V ns Diode peak reverse current I rr I F = A A Diode recovery charge Q rr dl/dt = 5 A/μs nc Diode reverse recovery time t rr VR = V ns Diode peak reverse current I rr I F = A A Diode recovery charge Q rr dl/dt = 5 A/μs, nc Note (1) Energy losses include tail and diode reverse recovery. Revision: 16-Jun-16 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-ENQ3L1S INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Resistance R T C = C 5 R T C = C 493 ± 5 % B-value B /5 R 2 = R exp. [B /5 (1/T 2-1/( K))] 3375 ± 5 % K Maximum operating temperature 2 C Dissipation constant 2 mw/ C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Q1 - Q4 TRENCH IGBT 1 V - Junction to case thermal resistance (per switch) Q2 - Q3 TRENCH IGBT 6 V- Junction to case thermal resistance (per switch) R thjc D1 - D4 AP diode - Junction to case thermal resistance (per diode) D2 - D3 AP diode - Junction to case thermal resistance (per diode) Q1 - Q4 TRENCH IGBT 1 V - Case to sink thermal resistance (per switch) C/W Q2 - Q3 TRENCH IGBT 6 V - Case to sink thermal resistance (per switch) D1 - D4 AP diode - Case to sink thermal resistance (per diode) R (1) thcs D2 - D3 AP diode - Case to sink thermal resistance (per diode) Case to sink thermal resistance (per module) Mounting torque (M4) 2-3 Nm Weight g Note (1) Mounting surface flat, smooth, and greased T J = C T J = 15 C V GE = 9 V V GE = 12 V V GE = 15 V V GE = 18 V V CE (V) V CE (V) Fig. 1 - Typical Q1 - Q4 Trench IGBT 1 V Output Characteristics V GE = 15 V Fig. 2 - Typical Q1 - Q4 Trench IGBT 1 V Output Characteristics Revision: 16-Jun-16 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-ENQ3L1S 16 Allowable Case Temperature ( C) DC I CES (ma) T J = 15 C.1 T J = C I C - Continuous Collector Current (A) V CES (V) Fig. 3 - Maximum Q1 - Q4 Trench IGBT 1 V Continuous Collector Current vs. Case Temperature Fig. 6 - Typical Q1 - Q4 Trench IGBT 1 V Zero Gate Voltage Collector Current T J = C V CE = V Energy (mj) E off E.5 on V GE (V) Fig. 4 - Typical Q1 - Q4 Trench IGBT 1 V Transfer Characteristics Fig. 7 - Typical Q1 - Q4 Trench IGBT 1 V Energy Loss vs. I C (with D1 - D4 Freewheeling Diode),, V CC = 6 V, R g = 4.7, V GE = 15 V, L = 5 μh T J = C V GEth (V) Switching Time (ns) t d(on) t r t f t d(off) I C (ma) Fig. 5 - Typical Q1 - Q4 Trench IGBT 1 V Gate Threshold Voltage Fig. 8 - Typical Q1 - Q4 Trench IGBT 1 V Switching Time vs. I C (with D1 - D4 Freewheeling Diode), V CC = 6 V, R g = 4.7, V GE = 15 V, L = 5 μh Revision: 16-Jun-16 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-ENQ3L1S Energy (mj) E on E off Allowable Case Temperature ( C) R g (Ω) I F - Continuous Forward Current (A) Fig. 9 - Typical Q1 - Q4 Trench IGBT 1 V Energy Loss vs. R g (with D1 - D4 Freewheeling Diode), V CC = 6 V, I C = 3 A, V GE = 15 V, L = 5 μh Fig Maximum D1 - D4 Antiparallel Diode Forward Current vs. Case Temperature 27 Switching Time (ns) t d(off) t r t f t d(on) t rr (ns) C 1 C R g (Ω) Fig. - Typical Q1 - Q4 Trench IGBT 1 V Switching Time vs. R g (with D1 - D4 Freewheeling Diode), V CC = 6 V, I C = 3 A, V GE = 15 V, L = 5 μh di F /dt (A/μs) Fig Typical D1 - D4 Antiparallel Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = A I F (A) T T J = 15 C J = 1 C 3 T J = C V FM (V) Fig Typical D1 - D4 Antiparallel Diode Forward Characteristics I rr (A) C C di F /dt (A/μs) Fig Typical D1 - D4 Antiparallel Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = A Revision: 16-Jun-16 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS-ENQ3L1S C Q rr (nc) C di F /dt (A/μs) Fig Typical D1 - D4 Antiparallel Diode Reverse Recovery Charge vs. di F /dt V rr = 4 V, I F = A Z thjc - Thermal Impedance Junction to Case ( C/W) 1.1 D =.5 D =.2.1 D =.1 D =.5 D =.2 D =.1.1 DC t 1 - Rectangular Pulse Duration (s) Fig Maximum Thermal Impedance Z thjc Characteristics (Q1 - Q4 Trench IGBT 1 V) Z thjc - Thermal Impedance Junction to Case ( C/W) 1.1 D =.5 D =.2.1 D =.1 D =.5 D =.2 D =.1.1 DC t 1 - Rectangular Pulse Duration (s) Fig Maximum Thermal Impedance Z thjc Characteristics (D1 - D4 Antiparallel Diode) Revision: 16-Jun-16 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 VS-ENQ3L1S T J = C T J = 15 C I CE (A) 6 V CE = V T J = C V CE (V) V GE (V) Fig Typical Q2 - Q3 Trench IGBT 6 V Output Characteristics V GE = 15 V Fig Typical Q2 - Q3 Trench IGBT 6 V Transfer Characteristics V GE = 18 V 4 3 V GE = 15 V V GE = 12 V V GE = 9 V V CE (V) Fig Typical Q2 - Q3 Trench IGBT 6 V Output Characteristics V GEth (V) I C (ma) T J = C Fig Typical Q2 - Q3 Trench IGBT 6 V Gate Threshold Voltage Allowable Case Temperature ( C) DC I C - Continuous Collector Current (A) Fig. - Maximum Q2 - Q3 Trench IGBT 6 V Continuous Collector Current vs. Case Temperature I CES (ma) V CES (V) T J = 15 C T J = C Fig Typical Q2 - Q3 Trench IGBT 6 V Zero Gate Voltage Collector Current Revision: 16-Jun-16 9 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 VS-ENQ3L1S I F (A) 6 5 T J = C 45 T J = 15 C V FM (V) Fig Typical D2 - D3 Antiparallel Diode Forward Characteristics Switching Time (ns) t d(off) t d(on) t f Fig Typical Q2 - Q3 Trench IGBT 6 V Switching Time vs. I C (with Freewheeling External TO-247 Diode Discrete 3ETH6), V CC = 3 V, R g = 4.7, V GE = 15 V, L = 5 μh t r Allowable Case Temperature ( C) I F - Continuous Forward Current (A) Fig. - Maximum D2 - D3 Antiparallel Diode Forward Current vs. Case Temperature Energy (mj) E off E on R g (Ω) Fig Typical Q2 - Q3 Trench IGBT 6 V Energy Loss vs. R g (with Freewheeling External TO-247 Diode Discrete 3ETH6), V CC = 3 V, I C =3 A, V GE = 15 V, L = 5 μh Energy (mj) E off E on Switching Time (ns) t d(on) t d(off) t f t r R g (Ω) Fig Typical Q2 - Q3 Trench IGBT 6 V Energy Loss vs. I C (with Freewheeling External TO-247 Diode Discrete 3ETH6 ), V CC = 3 V, R g = 4.7, V GE = 15 V, L = 5 μh Fig Typical Q2 - Q3 Trench IGBT 6 V Switching Time vs. R g (with Freewheeling External TO-247 Diode Discrete 3ETH6), V CC = 3 V, I C = 3 A, V GE = 15 V, L = 5 μh Revision: 16-Jun-16 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

11 VS-ENQ3L1S t rr (ns) C 1 C I rr (A) C 1 C di F /dt (A/μs) di F /dt (A/μs) Fig. 3 - Typical D2 - D3 Antiparallel Diode Reverse Recovery Time vs. di F /dt V rr = V, I F = A Fig Typical D2 - D3 Antiparallel Diode Reverse Recovery Current vs. di F /dt V rr = V, I F = A 9 85 Q rr (nc) C 1 C di F /dt (A/μs) Fig Typical D2 - D3 Antiparallel Diode Reverse Recovery Charge vs. di F /dt V rr = V, I F = A Z thjc - Thermal Impedance Junction to Case ( C/W) 1.1 D =.5 D =.2.1 D =.1 D =.5 D =.2 D =.1.1 DC t 1 - Rectangular Pulse Duration (s) Fig Maximum Thermal Impedance Z thjc Characteristics (Q2 - Q3 Trench IGBT 6 V) Revision: 16-Jun Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

12 VS-ENQ3L1S Z thjc - Thermal Impedance Junction to Case ( C/W) 1 D =.5 D =.2.1 D =.1 D =.5 D =.2 D =.1 DC t 1 - Rectangular Pulse Duration (s) Fig Maximum Thermal Impedance Z thjc Characteristics (D2 - D3 Antiparallel Diode) ORDERING INFORMATION TABLE Device code VS- EN Q 3 L 1 S product 2 - Package indicator (EN = EMIPAK-1B) 3 - Circuit configuration (Q = neutral point clamp topology) 4 - Current rating (3 = 3 A) 5 - Switch die technology (L = ultrafast Trench IGBT 1 V and Trench IGBT 6 V) 6 - Voltage rating (1 = 1 V) 7 - Diode die technology (S = SiC diode) Revision: 16-Jun Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

13 VS-ENQ3L1S CIRCUIT CONFIGURATION DC+ DC+ T1 M M D2 E3 G3 Q3 G1 E1 Q1 D1 T2 BR BR BR Q2 D3 Q4 D4 G4 E4 DC- DC- PACKAGE T1 T2 BR BR BR G4 E E1 G1 DC+ DC+ G3 E3 M M E2 G2 DC- DC- 9.6 Dimensions LINKS TO RELATED DOCUMENTS Revision: 16-Jun Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

14 Outline Dimensions EMIPAK-1B PressFit DIMENSIONS in millimeters 33.8 ± ± ± ±.3.4 ± ± ±. 3 ± ±.5 53 ± ± ±.3 37 ±.5 Ø 2.1 x 8.5 Ø 4.3 ± Typical pin position Revision: 18-May-17 1 Document Number: 958 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

15 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 17 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 9

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