IGBT ECONO3 Module, 150 A
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1 IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature coefficient Copper baseplate Operating frequencies 8 khz to 6 khz Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance please see PRODUCT SUMMARY V CES I C(DC) at T C = 57 C V CE(on) typ. at 5 A Package Circuit 2 V 5 A 3.45 V ECONO3 4 pack 4 pack with thermistor BENEFITS Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 2 V T C = 25 C 82 Continuous collector current I C T C = 8 C 24 Pulsed collector current I CM 37 Clamped inductive load current I LM 37 A T C = 25 C 3 Diode continuous forward current I F T C = 8 C 78 Diode maximum forward current I FSM 73 Gate to emitter voltage V GE ± 2 V T C = 25 C 892 Maximum power dissipation IGBT P D T C = 8 C 5 W MODULE Operating junction temperature range T J -55 to +5 Storage temperature range T Stg -4 to +25 C RMS isolation voltage V ISOL Any terminal to case, t = s 35 V Revision: 22-Apr-6 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS-GB5YG2NT ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(on) V GE = 5 V, I C = 2 A V GE = 5 V, I C = 5 A, T J = 25 C V V GE = 5 V, I C = 2 A, T J = 25 C Gate threshold voltage V GE(th) V CE = V GE, I C =.5 ma Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma, (25 C to 25 C) mv/ C V GE = V, V CE = 2 V μa Collector to emitter leaking current I CES V GE = V, V CE = 2 V, T J = 25 C ma I F = A Diode forward voltage drop V FM I F = 5 A I F = A, T J = 25 C V I F = 5 A, T J = 25 C Gate to emitter leakage current I GES V GE = ± 2 V - - ± 44 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g IC = 5 A Gate to emitter charge (turn-on) Q ge V CC = 6 V nc Gate to collector charge (turn-on) Q gc V GE = 5 V Turn-on switching loss E on I C = 5 A, V CC = 6 V, V GE = 5 V, Turn-off switching loss E off R g = 4.7, L = 5 μh, Total switching loss E tot Turn-on switching loss E on mj off R g = 4.7, L = 5 μh, T J = 25 C Turn-off switching loss E V CC = 6 V, I C = 5 A, V GE = 5 V, Total switching loss E tot Turn-on delay time t d(on) Rise time t r IC = 5 A, VCC = 6 V, VGE = 5 V, Turn-off delay time t d(off) R g = 4.7, L = 5 μh, T J = 25 C ns Fall time t f - - Reverse bias safe operating area Short circuit safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge RBSOA SCSOA T J = 5 C, I C = 37 A, R g = 4.7, V GE = 5 V to, V CC = 6 V, V P = 2 V T J = 5 C, V CC = 9 V, V P = 2 V, R g =, V GE = 5 V to - - μs t rr T J = 25 C V R = 4 V, I F = 5 A I rr T J = 25 C di/dt = 2 A/μs Q rr T J = 25 C ns A nc Revision: 22-Apr-6 2 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS-GB5YG2NT INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Resistance R 25 T C = 25 C 5 R T C = C 493 ± 5 % B-value B 25/5 R 2 = R 25 exp. [B 25/5 (/T 2 - /(298.5 K))] 3375 ± 5 % K Maximum operating temperature 22 C Dissipation constant 2 mw/ C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS IGBT - Junction to case (per switch) R thjc DIODE - Junction to case (per diode) R thjc C/W Case to sink, flat, greased surface (per module) R thjs Mounting torque (M5) Nm Weight g T J = 25 C V CE (V) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Allowable Case Temperature ( C) Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature DC I C - Continuous Collector Current (A) V GE = 2 V V GE = 5 V V GE = 8 V V CE (V) V GE = 9 V Fig. 2 - Typical IGBT Output Characteristics, T J = 25 C V CE (V) A A A T J ( C) Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 22-Apr-6 3 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS-GB5YG2NT V CE = 2 V T J = 5 C T J = 25 C I CES (ma).. 9 T J = 25 C V GE (V) V CES (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current V GE(th) (V) I F (A) T J = 25 C 3.4 T J = 25 C I C (ma) V FM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 6 Chip level Module level Allowable Case Temperature ( C) DC V CE (V) I F - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 22-Apr-6 4 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS-GB5YG2NT 9 t d(off) Energy (mj) Eon Eoff Switching Time (ns) t d(on) t r t f R g (Ω) Fig. - Typical IGBT Energy Loss vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 4 - Typical IGBT Switching Time vs. R g T J = 25 C, V CC = 6 V, I C = 5 A, V GE = 5 V, L = 5 μh Switching Time (ns) t d(off) t d(on) t f t r t rr (ns) T J = 25 C T 2 J = 25 C di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A Energy (mj) Eon Eoff I rr (A) T 28 J = 25 C R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Energy Loss vs. R g T J = 25 C, V CC = 6 V, I C = 5 A, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A Revision: 22-Apr-6 5 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS-GB5YG2NT Q rr (nc) T J = 25 C di F /dt (A/μs) Fig. 7 - Typical Diode Reverse Recovery Charge vs. di F /dt, V rr = 4 V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W) DC.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W) DC.... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) Revision: 22-Apr-6 6 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VS-GB5YG2NT ORDERING INFORMATION TABLE Device code VS- G B 5 Y G 2 N T product - Insulated gate bipolar transistor (IGBT) - B = IGBT Generation 5 NPT - Current rating (5 = 5 A) - Circuit configuration (Y = 4 pack) - Package indicator (G = ECONO3) - Voltage rating (2 = 2 V) - Speed / type (N = ultrafast with reduced diode, speed 8 khz to 6 khz) - NTC Thermistor CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING pack with thermistor Y QB QB QB3 QB Ntc 6 2 Dimensions LINKS TO RELATED DOCUMENTS Revision: 22-Apr-6 7 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 Outline Dimensions ECONO3 4 Pack DIMENSIONS in millimeters and inches Revision: 2-Apr-6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
IGBT ECONO3 Module, 100 A
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