Power MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C

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1 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-rohs-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage 500 V Gate-Source Voltage ± 20 V Continuous Drain Current at T C = 25 C 8.0 I D T C = 100 C 5.1 A Pulsed Drain Current a I DM 32 Linear Derating Factor 1.0 W/ C Single Pulse Avalanche Energy b E AS 510 mj Repetitive Avalanche Current a I AR 8.0 A Repetitive Avalanche Energy a E AR 13 mj Maximum Power Dissipation T C = 25 C P D 125 W Peak Diode Recovery dv/dt c dv/dt 3.5 V/ns Operating Junction and Storage Temperature Range T J, T stg -55 to 150 Soldering Recommendations (Peak temperature) d for 10 s 300 C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 25 C, L = 14 mh, R g = 25, I AS = 8.0 A (see fig. 12). c. I SD 8.0 A, di/dt 100 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m S Rev. D, 02-May-16 1 Document Number: 91070

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 62 Case-to-Sink, Flat, Greased Surface R thcs C/W Maximum Junction-to-Case (Drain) R thjc SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage = 0 V, I D = 250 μa V Temperature Coefficient /T J Reference to 25 C, I D = 1 ma V/ C Gate-Source Threshold Voltage (th) =, I D = 250 μa V Gate-Source Leakage I GSS = ± 20 V - - ± 100 na = 500 V, = 0 V Zero Gate Voltage Drain Current I DSS = 400 V, = 0 V, T J = 125 C μa Drain-Source On-State Resistance R DS(on) = I D = 4.8 A b Forward Transconductance g fs = 50 V, I D = 4.8 A b S Dynamic Input Capacitance C iss VGS = 0 V, Output Capacitance C oss = 25 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-Source Charge Q gs I = D = 8 A, = 400 V, see fig. 6 and 13 b nc Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 250 V, I D = 8 A Turn-Off Delay Time t d(off) R g = 9.1, R D = 31, see fig. 10 b ns Fall Time t f D Between lead, Internal Drain Inductance L D mm (0.25") from G package and center of Internal Source Inductance L S die contact S nh Gate Input Resistance R g f = 1 MHz, open drain Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I S showing the integral reverse Pulsed Diode Forward Current a G I SM S p - n junction diode A Body Diode Voltage V SD T J = 25 C, I S = 8 A, = 0 V b V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr T J = 25 C, I F = 8 A, di/dt = 100 A/μs b μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S Rev. D, 02-May-16 2 Document Number: 91070

3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V µs Pulse Width T C = 25 C 91070_01, Drain-to-Source Voltage (V) 4.5 V Fig. 1 - Typical Output Characteristics, T C = 25 C R DS(on), Drain-to-Source On Resistance (Normalized) 91070_ I D = 8.0 A = T J, Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature 91070_ Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V V 20 µs Pulse Width T C = 150 C, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T C = 150 C Capacitance (pf) 91070_ = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 91070_ C 25 C 20 µs Pulse Width = 50 V , Gate-to-Source Voltage (V), Gate-to-Source Voltage (V) I D = 8.0 A = 400 V = 250 V = 100 V For test circuit see figure _06 Q G, Total Gate Charge (nc) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage S Rev. D, 02-May-16 3 Document Number: 91070

4 8.0 I SD, Reverse Drain Current (A) 91070_ C C V SD, Source-to-Drain Voltage (V) = 0 V Fig. 7 - Typical Source-Drain Diode Forward Voltage _ T C, Case Temperature ( C) Fig. 9 - Maximum Drain Current vs. Case Temperature 91070_ Operation in this area limited by R DS(on) T C = 25 C T J = 150 C Single Pulse 10 µs 100 µs 1 ms 10 ms , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit 90 % R G Pulse width 1 µs Duty factor 0.1 % R D D.U.T. 10 % t d(on) t r t d(off) t f - V DD Fig. 10b - Switching Time Waveforms 10 Thermal Response (Z thjc ) Single Pulse (Thermal Response) P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc T C Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case S Rev. D, 02-May-16 4 Document Number: 91070

5 L Vary t p to obtain required I AS R G D.U.T. I AS - V DD t p V DD t p 0.01 Ω I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) Top Bottom I D 3.6 A 5.1 A 8.0 A V DD = 50 V _12c Starting T J, Junction Temperature ( C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kω Q G 12 V 0.2 µf 0.3 µf Q GS Q GD D.U.T. V - DS V G 3 ma Charge I G I D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit S Rev. D, 02-May-16 5 Document Number: 91070

6 Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period = a D.U.T. I SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. D, 02-May-16 6 Document Number: 91070

7 Package Information TO D L H(1) Q L(1) 1 E 2 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X Rev. C, 14-Dec-15 DWG: 6031 Note M* = inches to inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14-Dec-15 1 Document Number: 66542

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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