Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A

Transcription

1 Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS V CES 6 V I C DC at T C = 25 C 53 A V CE(on) (typical) at 3 A, 25 C.24 V Speed DC to khz Package Dual INT-A-PAK low profile Circuit configuration Half bridge Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al 2 O 3 DBC UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance please see BENEFITS Increased operating efficiency Performance optimized as output inverter stage for TIG welding machines Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V Continuous collector current I () T C = 25 C 53 C T C = 8 C 376 Pulsed collector current I CM 8 Clamped inductive load current I LM 8 A T C = 25 C 29 Diode continuous forward current I F T C = 8 C 45 Gate to emitter voltage V GE ± 2 V T C = 25 C 36 Maximum power dissipation (IGBT) P D T C = 8 C 636 W Any terminal to case RMS isolation voltage V ISOL (V RMS t = s, ) 35 V Note () Maximum continuous collector current must be limited to 5 A to do not exceed the maximum temperature of terminals Revision: -Dec-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GA3TD6S ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(on) V GE = 5 V, I C = 3 A V GE = 5 V, I C = 5 A, V V GE = 5 V, I C = 3 A, Gate threshold voltage V GE(th) V CE = V GE, I C = 25 μa V GE = V, V CE = 6 V Collector to emitter leakage current I CES V GE = V, V CE = 6 V, -.5 ma I FM = 5 A Diode forward voltage drop V FM I FM = 3 A I FM = 5 A, V I FM = 3 A, Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on I C = 3 A, V CC = 36 V, V GE = 5 V, Turn-off switching loss E off R g =.5, L = 5 μh, Total switching loss E tot mj Turn-on switching loss E on Turn-off switching loss E off Total switching loss E tot I C = 3 A, V CC = 36 V, V GE = 5 V, Turn-on delay time t d(on) R g =.5, L = 5 μh, Rise time t r ns Turn-off delay time t d(off) Fall time t f Reverse bias safe operating area RBSOA T J = 5 C, I C = 8 A, V CC = 4 V V P = 6 V, R g = 22 V GE = 5 V to V, L = 5 μh Fullsquare Diode reverse recovery time t rr ns I F = 3 A, di F /dt = 5 A/μs, Diode peak reverse current I rr A V CC = 4 V, Diode recovery charge Q rr μc Diode reverse recovery time t rr ns I F = 3 A, di F /dt = 5 A/μs, Diode peak reverse current I rr A V CC = 4 V, Diode recovery charge Q rr μc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction and storage temperature range T J, T Stg -4-5 C Junction to case per leg IGBT - -. R thjc Diode C/W Case to sink per module R thcs Mounting torque case to heatsink: M6 screw 4-6 case to terminal, 2, 3: M5 screw 2-5 Nm Weight g Revision: -Dec-7 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GA3TD6S 93362_ V CE (V) Fig. - Typical Output Characteristics,, V GE = 5 V V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V V CE (V) 93362_ Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V V CE = 2 V 4 A 5 A T J ( C) 3 A _2 Allowable Case Temperature ( C) 93362_ V CE (V) Fig. 2 - Typical Output Characteristics, DC I C - Continuous Collector Current (A) Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature 93362_5 V geth (V) 93362_ V GE (V) Fig. 5 - Typical IGBT Transfer Characteristics I C (ma) Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: -Dec-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GA3TD6S 93362_7 V CE (V) Fig. 7 - IGBT Reverse Bias SOA, T J = 5 C, V GE = 5 V, R g = 22 Allowable Case Temperature ( C) DC _ I F - Continuous Forward Current (A) Fig. - Maximum DC Forward Current vs. Case Temperature 5 I CES (ma).. Energy (mj) E off E on 93362_ V CES (V) Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current _ Fig. - Typical IGBT Energy Loss vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh I F (A) 93362_ V FM (V) Fig. 9 - Typical Diode Forward Characteristics Switching Time (ns) 93362_2 t d(on) t d(off) Fig. 2 - Typical IGBT Switching Time vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh t f t r Revision: -Dec-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GA3TD6S Energy (mj) 93362_3 Switching Time (ns) _4 E off E on R g (Ω) Fig. 3 - Typical IGBT Energy Loss vs. R g,, I C = 3 A, V CC = 36 V, V GE = 5 V, L = 5 μh t f t d(off) t r R g (Ω) t d(on) Fig. 4 - Typical IGBT Switching Time vs. R g,, I C = 3 A, V CC = 36 V, V GE = 5 V, L = 5 μh t rr (ns) 93362_5 I rr (A) 93362_ di F /dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt, V CC = 4 V, I F = 3 A di F /dt (A/µs) Fig. 6 - Typical Reverse Recovery Current vs. di F /dt, V CC = 4 V, I F = 3 A Q rr (μc) 93362_ T J = 25 C di F /dt (A/μs) Fig. 7 - Typical Reverse Recovery Charge vs. di F /dt, V CC = 4 V, I F = 3 A Revision: -Dec-7 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-GA3TD6S Z thjc - Thermal Impedance Junction to Case ( C/W) 93362_8.... D =.5 D =.2 D =. D =.5 D =.2 D =. DC.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 93362_ t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) ORDERING INFORMATION TABLE Device code G A 3 T D 6 S Insulated gate bipolar transistor (IGBT) 2 - A = Gen 4 IGBT 3 - Current rating (3 = 3 A) 4 - Circuit configuration (T = half bridge) 5 - Package indicator (D = dual INT-A-PAK low profile) 6 - Voltage rating (6 = 6 V) 7 - Speed / type (S = standard speed IGBT) Revision: -Dec-7 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-GA3TD6S CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: -Dec-7 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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