Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A

Transcription

1 Molding Type Module IGBT, 1-in-1 Package, 12 V and 3 A FEATURES VS-GB3AH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK 12 V 3 A 1.9 V 8 khz to 3 khz Dual INT-A-PAK Single switch with AP diode High short circuit capability, self limiting to 6 x I C 1 μs short circuit capability V CE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Switching mode power supplies AC inverter drives Electronic welders at f sw up to 2 khz DESCRIPTION Vishay s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 12 Gate to emitter voltage V GES ± 2 V T C = 25 C 62 Collector current at T J = 15 C I C T C = 8 C 3 Pulsed collector current I (1) CM T C = 8 C 6 A Diode continuous forward current I F 3 Diode maximum forward current I FM 6 Maximum power dissipation P D T J = 15 C 25 W Short circuit withstand time t SC T J = 125 C 1 μs I 2 t-value, diode I 2 t V R = V, t = 1 ms, T J = 125 C 19 A 2 s RMS isolation voltage V ISOL f = 5 Hz, t = 1 min 25 V Note (1) Repetitive rating: pulse width limited by maximum junction temperature IGBT ELECTRICAL SPECIFICATIONS (T C = 25 C unless otherwise noted) Collector to emitter breakdown voltage V (BR)CES T J = 25 C V GE = 15 V, I C = 3 A, T J = 25 C Collector to emitter saturation voltage V CE(on) V GE = 15 V, I C = 3 A, T J = 125 C V Gate to emitter threshold voltage V GE(th) V CE = V GE, I C = 12 ma, T J = 25 C Zero gate voltage collector current I CES V CE = V CES, V GE = V, T J = 25 C ma Gate to emitter leakage current I GES V GE = V GES, V CE = V, T J = 25 C na Revision: 21-Sep-17 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GB3AH12N SWITCHING CHARACTERISTICS Turn-on delay time Rise time t r Turn-off delay time t d(off) V CC = 6 V, I C = 3 A, R g = 4.7, ns Fall time t f V GE = ± 15 V, T J = 25 C Turn-on switching loss E on Turn-off switching loss E off mj Turn-on delay time Rise time t r Turn-off delay time t d(off) V CC = 6 V, I C = 3 A, R g = 4.7, ns Fall time t f V GE = ± 15 V, T J = 125 C Turn-on switching loss E on Turn-off switching loss E off mj Input capacitance C ies Output capacitance C oes V GE = V, V CE = 25 V, f = 1. MHz nf Reverse transfer capacitance C res t sc 1 μs, V GE = 15 V, T J = 125 C, SC data I SC V CC = 9 V, V CEM 12 V A Stray inductance L CE nh Module lead resistance, terminal to chip R CC +EE T C = 25 C m charge DIODE ELECTRICAL SPECIFICATIONS (T C = 25 C unless otherwise noted) Diode forward voltage V F I F = 3 A T J = 25 C T J = 125 C V Diode reverse recovery Q rr T J = 25 C T J = 125 C μc I F = 3 A, V R = 6 V, T J = 25 C Diode peak reverse recovery current I rr di/dt = -24 A/μs, T V GE = -15 V J = 125 C A T J = 25 C Diode reverse recovery energy E rec T J = 125 C mj THERMAL AND MECHANICAL SPECIFICATIONS Operating junction temperature range T J C Storage temperature range T Stg Junction to case IGBT R per module thjc Diode K/W Case to sink R thcs Conductive grease applied Mounting torque Power terminal screw: M6 2.5 to 5. Mounting screw: M6 3. to 6. Nm Weight 31 g Revision: 21-Sep-17 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GB3AH12N T J = 25 C T J = 125 C E on, E off (mj) E on 1 2 E off 93475_ V CE (V) Fig. 1 - Typical Output Characteristics V GE = 15 V 93475_ R g (Ω) Fig. 4 - Switching Loss vs. Gate Resistor V CC = 6 V, I C = 3 A, V GE = ± 15 V, T J = 125 C V GE (V) _2 2 1 T J = 125 C V GE (V) T J = 25 C Fig. 2 - Typical Transfer Characteristics V CE = 2 V 93475_ Q g (μc) Fig. 5 - Gate Charge Characteristics V CC = 6 V, I C = 3 A, T J = 25 C 8 1 C ies 6 E on, E off (mj) 4 2 E on E off C (nf) 1 1 C res C oes 93475_ Fig. 3 - Switching Loss vs. Collector Current V CC = 6 V, R g = 4.7, V GE = ± 15 V, T J = 125 C 93475_ V CE (V) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 35 Revision: 21-Sep-17 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GB3AH12N 1 1 t d(off) t d(off) 1 t (ns) 1 t r t (ns) t f 1 t r t f 93475_ Fig. 7 - Typical Switching Times vs. I C V CC = 6 V, R g = 4.7, V GE = ± 15 V, T J = 125 C 93475_ R g (Ω) Fig. 8 - Typical Switching Times vs. Gate Resistance V CC = 6 V, I C = 3 A, V GE = ± 15 V, T J = 125 C 4 3 I F (A) 2 25 C 125 C _ V F (V) Fig. 9 - Typical Forward Characteristics (Diode) 1 Diode Z thjc (K/W) IGBT _1 t p (s) Fig. 1 - Transient Thermal Impedance Revision: 21-Sep-17 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GB3AH12N CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: 21-Sep-17 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 91