Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

Transcription

1 Not Available for New Designs, Use VSGB9SAU Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A VSGB75SAUP SOT7 PRODUCT SUMMARY V CES V I C DC 75 A at 95 C V CE(on) typical at 75 A, 5 C 3.3 V Package SOT7 FEATURES NPT Generation V IGBT technology Square RBSOA Positive V CE(on) temperature coefficient Fully isolated package Speed 8 khz to 6 khz Very low internal inductance ( 5 nh typical) Industry standard outline Material categorization: For definitions of compliance please see /doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plugin compatible with other SOT7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I C T C = 5 C 3 T C = 8 C 89 A Pulsed collector current I CM Clamped inductive load current I LM Gate to emitter voltage V GE ± V Power dissipation P D W T C = 5 C 658 T C = 8 C 369 Isolation voltage V ISOL Any terminal to case, t = min 5 V ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa Collector to emitter voltage V V GE = 5 V, I C = 75 A CE(on) V GE = 5 V, I C = 75 A, T J = 5 C Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) mv/ C V GE = V, V CE = V 3 5 μa Collector to emitter leakage current I CES V GE = V, V CE = V, T J = 5 C 4 ma Gate to emitter leakage current I GES V GE = ± V ± na V Revision: 6Jul3 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 Not Available for New Designs, Use VSGB9SAU VSGB75SAUP SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turnon) Q g 69 Gate to emitter charge (turnon) Q ge IC = 5 A, VCC = 6 V, VGE = 5 V 65 Gate to collector charge (turnon) Q gc 5 Turnon switching loss Turnoff switching loss Total switching loss E tot I C = 75 A, V CC = 6 V, V GE = 5 V, R g = 5 L = 5 μh Turnon switching loss Turnoff switching loss Energy losses include tail and Total switching loss E tot diode recovery 5.94 I C = 75 A, V CC = 6 V, (see fig. 8) Turnon delay time t d(on) V GE = 5 V, R g = 5 8 Rise time t r L = 5 μh, T J = 5 C 45 Turnoff delay time t d(off) 3 Fall time t f 6 Reverse bias safe operating area RBSOA T J = 5 C, I C = A, R g = V GE = 5 V to V, V CC = 9 V, V P = V, L = 5 μh Fullsquare nc mj ns THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction and storage temperaure range T J, T STG 4 5 Thermal resistance, junction to case R thjc.9 C/W Thermal resistance case to heatsink R thcs Flat, greased surface.5 Weight 3 g Mounting torque.3 Nm Case style SOT7 Revision: 6Jul3 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 Not Available for New Designs, Use VSGB9SAU VSGB75SAUP Allowable Case Temperature ( C) _ I C Continuous Collector Current (A) Fig. Maximum DC IGBT Collector Current vs. Case Temperature I CES (ma) _4 T J = 5 C V CES (V) T J = 5 C Fig. 4 Typical IGBT Zero Gate Voltage Collector Current T J = 5 C 5. V geth (V) T J = 5 C _ V CE (V) Fig. IGBT Reverse Bias SOA T J = 5 C, V GE = 5 V 934_ I C (ma) Fig. 5 Typical IGBT Threshold Voltage A 5 T J = 5 C T J = 5 C V CE (V) A 7 A 934_ V CE (V) Fig. 3 Typical IGBT Collector Current Characteristics 934_ T J ( C) Fig. 6 Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V Revision: 6Jul3 3 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 Not Available for New Designs, Use VSGB9SAU VSGB75SAUP Energy (mj).5..5 Energy (mj) _ Fig. 7 Typical IGBT Energy Loss vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V _9 R G (Ω) Fig. 9 Typical IGBT Energy Loss vs. R g T J = 5 C, I C = 75 A, L = 5 μh, V CC = 6 V, V GE = 5 V t d(off) Switching Time (μs) t f t r t d(on) Switching Time (μs) t f t r t d(on) t d(off) 934_ Fig. 8 Typical IGBT Switching Time vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V 934_ R G (Ω) Fig. Typical IGBT Switching Time vs. R g T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Z thjc Thermal Impedance Junction to Case ( C/W)... Single pulse (thermal response) D =.5 D =. D =. D =.5 D =. D = _ Rectangular Pulse Duration (t ) Fig. Maximum Thermal Impedance Z thjc Characteristics Revision: 6Jul3 4 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 Not Available for New Designs, Use VSGB9SAU VSGB75SAUP 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. Clamped Inductive Load Test Circuit Fig. 3 Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L + 5 V R g D.U.T./ driver + V CC Fig. 4 Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E ts = ( + ) Fig. 5 Switching Loss Waveforms Test Circuit Revision: 6Jul3 5 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 ORDERING INFORMATION TABLE Not Available for New Designs, Use VSGB9SAU VSGB75SAUP Device code VS G B 75 S A U P product Insulated Gate Bipolar Transistor (IGBT) B = IGBT Generation 5 Current rating (75 = 75 A) Circuit configuration (S = Single switch without antiparallel diode) Package indicator (A = SOT7) Voltage rating ( = V) Speed/type (U = Ultrafast IGBT) Totally lead (Pb)free CIRCUIT CONFIGURATION 3 (C) (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS /doc?9536 /doc?9537 Revision: 6Jul3 6 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

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