Power MOSFET, 190 A FEATURES DESCRIPTION
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1 Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche rated Dynamic dv/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applications Easy to use and parallel Industry standard outline Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see DESCRIPTION High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized device design, very low onresistance and cost effectiveness. The isolated SOT227 package is preferred for all commercialindustrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS T C = 40 C 90 Continuous drain current at V GS 0 V I D T C = 00 C 30 A Pulsed drain current I DM 720 Power dissipation P D T C = 25 C 568 W Linear derating factor 2.7 W/ C Gate to source voltage V GS ± 20 V Single pulse avalanche energy E (2) AS 700 mj Avalanche current I () AR 80 A Repetitive avalanche energy E () AR 48 mj Peak diode recovery dv/dt dv/dt (3) 5.7 V/ns Operating junction and storage temperature range T J, T Stg 55 to 50 C Insulation withstand voltage (ACRMS) V ISO 2.5 kv Mounting torque M4 screw.3 Nm Notes () Repetitive rating; pulse width limited by maximum junction temperature (2) Starting T J = 25 C, L = 43 μh, R g = 25, I AS = 80 A (3) I SD 80 A, di/dt 83 A/μs, V DD V (BR)DSS, T J 50 C Revision: 02Oct208 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VSFB90SA0 THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Junction to case R thjc 0.22 Case to heatsink R thcs Flat, greased surface 0.05 C/W Weight 30 g Mounting torque Torque to terminal. (9.7) Nm (lbf.in) Torque to heatsink.8 (5.9) Nm (lbf.in) Case style SOT227 ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V (BR)DSS V GS = 0 V, I D = 250 μa 00 V Breakdown voltage temperature coefficient V (BR)DSS / T J Reference to 25 C, I D = ma V/ C Static drain to source onresistance R DS(on) V GS = 0 V, I D = 80 A m Gate threshold voltage V GS(th) V DS = V GS, I D = 250 μa V Forward transconductance g fs V DS = 25 V, I D = 80 A 93 S V DS = 00 V, V GS = 0 V 50 Drain to source leakage current I DSS V DS = 80 V, V GS = 0 V, T J = 25 C 500 μa V GS = 20 V 200 Gate to source forward leakage I GSS V GS = 20 V 200 na Total gate charge Q g ID = 80 A 250 Gate to source charge Q gs V DS = 80 V 40 nc Gate to drain ( Miller ) charge Q gd V GS = 0 V 0 Turnon delay time t d(on) VDD = 50 V 45 Rise time t r I D = 80 A 35 Turnoff delay time t d(off) R g = 2.0 (internal) 8 ns Fall time t f R D = Internal source inductance L S Between lead, and center of die contact 5.0 nh Input capacitance C iss VGS = 0 V Output capacitance C oss V DS = 25 V 2800 pf Reverse transfer capacitance C rss f =.0 MHz 300 SOURCEDRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current D I (body diode) S 90 MOSFET symbol showing the integral A G Pulsed source current (body diode) I SM reverse pn junction diode. 740 Diode forward voltage V SD T J = 25 C, I S = 80 A, V GS = 0 V.0.3 V Reverse recovery time t rr T J = 25 C, I F = 80 A, di/dt = 00 A/μs 300 ns Reverse recovery charge Q rr 2.6 μc Forward turnon time t on Intrinsic turnon time is negligible (turnon is dominated by L S L D ) S Revision: 02Oct208 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VSFB90SA0 I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics R DS(on), DraintoSource On Resistance (Normalized) 2.5 I D = 80A V GS = 0V T J, Junction Temperature( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds Crss = Cgd Coss = Cds Cgd C iss C oss C rss SHORTED 20μs PULSE WIDTH T J = 50 C V DS, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics V DS, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. Drain to Source Voltage I D, DraintoSource Current (A) T J = 50 C T J = 25 C V DS = 25V 20µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics V GS, GatetoSource Voltage (V) I = D 80 A V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. Gate to Source Voltage Revision: 02Oct208 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VSFB90SA I SD, Reverse Drain Current (A) 00 0 T J = 50 C T J = 25 C Allowable Case Temperature ( C) DC V GS = 0 V V SD,SourcetoDrain Voltage (V) Fig. 7 Typical Source Drain Diode Forward Voltage I D, Drain Current in DC (A) Fig. 9 Maximum Drain Current vs. Case Temperature 0000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D, Drain Current (A) us 00us ms 0ms TC = 25 C TJ = 50 C Single Pulse V DS, DraintoSource Voltage (V) Fig. 8 Maximum Safe Operating Area R G V GS 0 V V DS Pulse width µs Duty factor 0. % R D D.U.T. Fig. 0 Switching Time Test Circuit V DD V DS 90% 0% V GS t d(on) t r t d(off) t f Fig. Switching Time Waveforms Revision: 02Oct208 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VSFB90SA0 ZthJC Thermal Impedance ( C/W) DC Single pulse (thermal resistance) t, Rectangular Pulse Duration (s) Fig. 2 Maximum Effective Transient Thermal Impedance, Junction to Case R G V DS 20 V t p L D.U.T I AS 0.0 Ω 5 V Driver Fig. 3 Unclamped Inductive Test Circuit V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 7A 00A BOTTOM 60A Starting T, Junction Temperature( J C) Fig. 5 Maximum Avalanche Energy vs. Drain Current V (BR)DSS tp Q G 0 V Q GS Q GD V G I AS Fig. 4 Unclamped Inductive Waveforms Charge Fig. 6 Basic Gate Charge Waveform Revision: 02Oct208 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VSFB90SA0 Current regulator Same type as D.U.T. 2 V 0.2 µf 50 kω 0.3 µf D.U.T. V DS V GS 3 ma I G I D Current sampling resistors Fig. 7 Gate Charge Test Circuit D.U.T. 3 Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer 2 4 R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. Device under test V DD Fig. 8 Peak Diode Recovery dv/dt Test Circuit Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig. 9 For NChannel Power MOSFETs Revision: 02Oct208 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VSFB90SA0 ORDERING INFORMATION TABLE Device code VS F B 90 S A product 2 Power MOSFET 3 Generation 5 MOSFET 4 Current rating (90 = 90 A) 5 Single switch 6 Package indicator (SOT227) 7 Voltage rating (0 = 00 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D(3) 3 (D) 2 (G) G(2) S(4) Single switch S Lead Assignment (S) (D) (S) (S) (S) (G) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 02Oct208 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 Outline Dimensions SOT227 Generation II DIMENSIONS in millimeters (inches) Ø 4.0 (0.6) Ø 4.30 (0.69) (.508) (.488) A 4 x M4 nuts 2.50 (0.492) 3.00 (0.52) 6.25 (0.246) 6.50 (0.256) (.02) (0.972) B 7.45 (0.293) 7.60 (0.299) (.200) (.73) 4.90 (0.587) 5.20 (0.598) R full 2.0 (0.083) 2.20 (0.087) 3.50 (.240) 32.0 (.264) 8.30 (0.327) 4 x 7.70 (0.303) 0.25 (0.00) M C A M B M 2.20 (0.087).90 (0.075) 4.0 (0.6) 4.50 (0.77) C 0.3 (0.005) 2.30 (0.484).70 (0.460) (0.984) (.004) Note Controlling dimension: millimeter Revision: 02Aug2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08Feb7 Document Number: 9000
Power MOSFET, 72 A FEATURES DESCRIPTION
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EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
More informationPower MOSFET FEATURES. IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540
Power MOSFET PRODUCT SUMMARY (V) 1 R DS(on) (Ω) = 1 V.2 Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 29 Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET
More informationPower MOSFET FEATURES. IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610
IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
More informationE Series Power MOSFET with Fast Body Diode
E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
More informationPower MOSFET FEATURES. IRLD120PbF SiHLD120-E3 IRLD120 SiHLD120
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
More informationE Series Power MOSFET
E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
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E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
More informationPower MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationPower MOSFET. IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
More informationE Series Power MOSFET
E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
More informationPower MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C
Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET. IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET DESCRIPTION. IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
More informationPower MOSFET FEATURES. IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
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E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
More informationPower MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationE Series Power MOSFET
E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
More informationPower MOSFET FEATURES. IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
More informationPower MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A
Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationPower MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N
Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationPower MOSFET FEATURES. IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 300 R DS(on) (Ω) = 0 V 0.75 Q g (Max.) (nc) 7 Q gs (nc) 4.8 Q gd (nc) 7.6 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationPower MOSFET FEATURES. IRF630PbF SiHF630-E3 IRF630 SiHF630. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
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EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) (Ω) V GS = 10 V 2.2 Q g (Max.) (nc) 31 Q gs (nc) 4.6 Q gd (nc) 17 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET FEATURES. IRF620PbF SiHF620-E3 IRF620 SiHF620. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 0.27 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationE Series Power MOSFET
E Series Power MOSFET SiHA2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.84 Q g max. (nc) 92 Q gs (nc) Q gd (nc) 9 Configuration Single FEATURES Low figureofmerit (FOM) R on
More informationE Series Power MOSFET
E Series Power MOSFET SiHD2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 5 Q gs (nc) 6 Q gd (nc) Configuration Single FEATURES Low figureofmerit (FOM) R on
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 32 Configuration Single TO22 FULLPAK D G G D S S NChannel MOSFET ORDERING
More informationPower MOSFET. Package SOT-223 SOT-223 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single S SOT223 D G G D S D PChannel MOSFET FEATURES Surface Mount Available
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) 2 R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S
More informationPower MOSFET FEATURES. IRL510PbF SiHL510-E3 IRL510 SiHL510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 10
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
More informationPower MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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