Power MOSFET, 72 A FEATURES DESCRIPTION
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1 Power MOSFET, 72 A SFA72SA5LC SOT227 PRIMARY CHARACTERISTICS S 5 R DS(on).65 I D 72 A Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Easy to use and parallel Low onresistance Dynamic d/dt rating Fully avalanche rated Simple drive requirements Low gate charge device Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance please see DESCRIPTION Third generation power MOSFETs from ishay Semiconductors provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The SOT227 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 6 W to W. The low thermal resistance of the SOT227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS T C = 25 C 72 Continuous drain current at I D T C = 9 C 52 A Pulsed drain current I () DM 228 T C = 25 C 36 Power dissipation P D T C = 9 C 55 W Gate to source voltage ± 2 Single pulse avalanche energy E (2) AS 725 mj Repetitive avalanche current I () AR 22 A Repetitive avalanche energy E () AR 2 mj Peak diode recovery d/dt d/dt (3) /ns Operating junction and storage temperature range, T Stg 55 to 5 C Insulation withstand voltage (ACRMS) ISO 2.5 k Mounting torque M screw, on terminals and heatsink.3 Nm Notes () Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8) (2) Starting = 25 C, L = 5 μh, R g = 2., I AS = 57 A (see fig. 8) (3) I SD 57 A, di F /dt 2 A/μs, DD (BR)DSS, 5 C Revision: 27Sep7 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 SFA72SA5LC THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range, T Stg 55 5 C Junction to case R thjc. Case to heatsink R thcs Flat, greased surface.5 C/W Weight 3 g Mounting torque Torque to terminal. (9.7) Nm (lbf.in) Torque to heatsink.8 (5.9) Nm (lbf.in) Case style SOT227 ELECTRICAL CHARACTERISTICS ( = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage (BR)DSS =, I D =. ma 5 Breakdown voltage temperature coefficient (BR)DSS / Reference to 25 C, I D = ma.6 / C Static drain to source onresistance R () DS(on) =, I D = 3 A m =, I D = 25 μa Gate threshold voltage (th) =, I D = 25 μa, = 25 C.9 Forward transconductance g fs = 5, I D = 3 A 52.5 S Drain to source leakage current I DSS = 5, =, = 25 C 3 5 = 5, =.5 5 μa = 5, =, = 5 C.2 3. ma Gate to source forward leakage = 2 2 I GSS Gate to source reverse leakage = 2 2 na Total gate charge Q g ID = 6 A Gate to source charge Q gs = 5 77 nc Gate to drain ( Miller ) charge Q gd = ; see fig. 5 and 9 () 98 7 Turnon delay time t d(on) DD = 25 3 Rise time t r I D = 6 A Turnoff delay time t d(off) R g = 2. 5 ns Fall time t f L = 5 μh; diode used: 6APH6 3 Turnon delay time t d(on) DD = Rise time t r I D = 6 A 7 Turnoff delay time t d(off) R g = 2. 6 ns Fall time t f L = 5 μh; diode used: 6APH6 35 Internal source inductance L S Between lead, and center of die contact 5. nh Input capacitance C iss GS = Output capacitance C oss = 25 5 pf Reverse transfer capacitance C rss f =. MHz, see fig. 5 Note () Pulse width 3 μs, duty cycle 2 % Revision: 27Sep7 2 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 SFA72SA5LC SOURCEDRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current (body diode) I S MOSFET symbol showing D 72 the integral reverse pn Pulsed source current (body diode) I () G SM 228 junction diode. S A = 25 C, I F = 5 A, di F /dt = A/μs (2) = 25 C, I F = 5 A, di F /dt = A/μs (2) Diode forward voltage (2) SD = 25 C, I S = 57 A, =.9.3 = 25 C, I S = 57 A, =.75 Reverse recovery time t rr 66 ns Reverse recovery current I rr 6 A Reverse recovery charge Q rr 5 μc Reverse recovery time t rr 88 ns Reverse recovery current I rr 5 A Reverse recovery charge Q rr 23 μc Forward turnon time t on Intrinsic turnon time is negligible (turnon is dominated by L S L D ) Notes () Repetitive rating; pulse width limited by maximum junction temperature (see fig. ) (2) Pulse width 3 μs, duty cycle 2 % Allowable Case Temperature ( C) DC DrainSource Current (A) I DS = 7 = 8 = = 2 = 5 = 6 = I DS Continuous DrainSource Current (A) DraintoSource oltage () Fig. Maximum DC MOSFET DrainSource Current I DS (A) Fig. 3 Typical DraintoSource Output Characteristics at = 25 C Continuous DrainSource Current (A) I DS = 25 C = 25 C = 5 C =... DraintoSource oltage () DraintoSource Current (A) I DS = 7 = 8 = = 2 = DraintoSource oltage () = 6 = 5 Fig. 2 Typical DraintoSource Output Characteristics Fig. Typical DraintoSource Current Output Characteristics at = 25 C Revision: 27Sep7 3 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 SFA72SA5LC DraintoSource Current (A) I DS = 7 = 8 = = 2 = DraintoSource oltage () = 6 = 5 DraintoSource Current (A) I DS = 5 C = 25 C = 25 C GatetoSource oltage () Fig. 5 Typical DraintoSource Current Output Characteristics at = 5 C Fig. 8 Typical MOSFET Transfer Characteristics R DS(on) DraintoSource OnResistance (mω) I D = 6 A = Junction Temperature ( C) DraintoSource Current (A) I DS = 5 C. = 25 C.. = 25 C DraintoSource oltage () Fig. 6 Typical DraintoSource OnResistance vs. Temperature Fig. 9 Typical MOSFET Zero Gate oltage Drain Current Forward SourcetoDrain Current (A) I FSD = 5 C = 25 C = 25 C FSD DraintoSource Forward oltage Drop Characteristics () Fig. 7 Typical Body Diode Forward oltage Drop Characteristics Threshold oltage () TH = 25 C = 25 C 2.5 = 5 C I D (ma) Fig. Typical MOSFET Threshold oltage Revision: 27Sep7 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 SFA72SA5LC t d(on) t d(off) Switching time (μs). t f t d(off) t d(on) Switching Time (μs). t r t f t r Draintosource current I ds (A) Fig. Typical MOSFET Switching Time vs. I DS, = 25 C, DD = 25, =, L = 5 μh, R G = 2. Diode used: 6APH Rg (Ω) Fig. 2 Typical MOSFET Switching Time vs. R g, = 25 C, I DS = A, DD = 25, =, L = 5 μh Diode used: 6APH6 Z thjc Thermal Impedance Junction to Case ( C/W)..75 P DM t. t 2 t.5. Duty Cycle, D = t Peak = P DM x Z thjc T C DC t Rectangular Pulse Duration (s) Notes: Fig. 3 Maximum Thermal Impedance Z thjc Characteristics, MOSFET C Capacitance (pf) GS =, f = MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd Coss = Cds Cgd C iss C oss C rss DraintoSource oltage () GatetoSource oltage () GS I = D 57 A FOR TEST CIRCUIT SEE FIGURE Q Total Gate Charge (nc) g DS DS DS = = 25 = Fig. Typical Capacitance vs. DraintoSource oltage Fig. 5 Typical Gate Charge vs. GatetoSource oltage Revision: 27Sep7 5 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 SFA72SA5LC OPERATION IN THIS AREA LIMITED BY R DS(on) I D Drain Current (A) μs μs ms TC = 25 C ms TJ = 5 C Single Pulse DS DraintoSource oltage () Fig. 6 Maximum Safe Operating Area R D tp (BR)DSS D.U.T. R G DD Pulse width µs Duty factor. % Fig. 7a Switching Time Test Circuit I AS Fig. 8b Unclamped Inductive Waveforms 9% Q GS Q G Q GD % GS t d(on) t r t d(off) t f Fig. 7b Switching Time Waveforms G Charge Fig. 9a Basic Gate Charge Waveform Current regulator Same type as D.U.T. 5 KW µf.3 µf L Driver D.U.T. R G 2 t p D.U.T I AS. W Fig. 8a Unclamped Inductive Test Circuit DD A 3 ma Fig. 9b Gate Charge Test Circuit I G I D Current sampling resistors Revision: 27Sep7 6 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 SFA72SA5LC D.U.T. 3 Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer 2 R G d/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. Device under test DD Fig. 9c Peak Diode Recovery d/dt Test Circuit Driver Gate Drive Period P.W. D = P.W. Period = * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt DD ReApplied oltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * = 5 for Logic Level Devices Fig. 2 For NChannel Power MOSFETs Revision: 27Sep7 7 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 SFA72SA5LC ORDERING INFORMATION TABLE Device code S F A 72 S A 5 LC product Power MOSFET A = generation 3, MOSFET silicon die Current rating (72 = 72 A) Single switch Package indicator (SOT227) oltage rating (5 = 5 ) LC = low charge CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D(3) 3 (D) 2 (G) G(2) S() Lead Assignment Single switch S (S) (D) 3 2 (S) (S) (S) (G) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 27Sep7 8 Document Number: 9782 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Outline Dimensions SOT227 Generation II DIMENSIONS in millimeters (inches) Ø. (.6) Ø.3 (.69) 38.3 (.58) 37.8 (.88) A x M nuts 2.5 (.92) 3. (.52) 6.25 (.26) 6.5 (.256) 25.7 (.2) 2.7 (.972) B 7.5 (.293) 7.6 (.299) 3.5 (.2) 29.8 (.73).9 (.587) 5.2 (.598) R full 2. (.83) 2.2 (.87) 3.5 (.2) 32. (.26) 8.3 (.327) x 7.7 (.33).25 (.) M C A M B M 2.2 (.87).9 (.75). (.6).5 (.77) C.3 (.5) 2.3 (.8).7 (.6) 25. (.98) 25.5 (.) Note Controlling dimension: millimeter Revision: 2Aug2 Document Number: 9523 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 Legal Disclaimer Notice ishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. ishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, ishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on ishay s knowledge of typical requirements that are often placed on ishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify ishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, ishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the ishay product could result in personal injury or death. Customers using or selling ishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized ishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of ishay. Product names and markings noted herein may be trademarks of their respective owners. 27 ISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERED Revision: 8Feb7 Document Number: 9
Power MOSFET, 190 A FEATURES DESCRIPTION
Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
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D Series Power MOSFET IRF8B PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) Q gd (nc) 5 Configuration Single D TO22AB FEATURES Optimal design Low area specific
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
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Power MOSFET PRODUCT SUMMARY (V) 300 R DS(on) (Ω) = 0 V 0.75 Q g (Max.) (nc) 7 Q gs (nc) 4.8 Q gd (nc) 7.6 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
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E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
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E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
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D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
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E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
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E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
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E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
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EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) 2 R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single S SOT223 D G G D S D PChannel MOSFET FEATURES Surface Mount Available
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EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
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EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
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E Series Power MOSFET SiHD2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 5 Q gs (nc) 6 Q gd (nc) Configuration Single FEATURES Low figureofmerit (FOM) R on
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) (Ω) V GS = 10 V 2.2 Q g (Max.) (nc) 31 Q gs (nc) 4.6 Q gd (nc) 17 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 0.27 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 0 V 0.85 Q g (Max.) (nc) 38 Q gs (nc) 9.0 Q gd (nc) 8 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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