MTP IGBT Power Module Primary Dual Forward
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- Sheryl Wilkerson
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1 MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V I F(DC) at 8 C A V F at 25 C at 5 A. V FRED Pt CHOPPER DIODE, T J = 5 C V R V I F(DC) at 8 C 22 A V F at 25 C at A 2.7 V Speed 3 khz to 5 khz Package MTP Circuit configuration Dual forward FEATURES Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate UL approved file E7899 Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Lower conduction losses and switching losses Optimized for welding, UPS, and SMPS applications PCB solderable terminals Direct mounting to heatsink ABSOLUTE MAXIMUM RATINGS IGBT Antiparallel diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Gate to emitter voltage V GE ± 2 V Maximum continuous collector current T C = 25 C 38 I at V GE = 5 V, T J = 5 C maximum C T C = 8 C 9 A Pulse collector current I () CM 33 Clamped inductive load current I LM 33 Maximum power dissipation P D T C = 25 C 543 W Repetitive peak reverse voltage V RRM V Maximum continuous forward current T C = 25 C 7 I T J = 5 C maximum F(DC) T C = 8 C A ms sine or ms rectangular Maximum nonrepetitive peak current I FSM pulse, Maximum power dissipation P D T C = 25 C 24 W Revision: 8Mar8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 VS5MTWDF ABSOLUTE MAXIMUM RATINGS Chopper diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V RRM V Maximum continuous forward current T C = 25 C 33 I T J = 5 C maximum F T C = 8 C 22 A ms sine or ms rectangular Maximum nonrepetitive peak current I FSM 35 pulse, Maximum power dissipation P D T C = 25 C 57 W Maximum operating junction T temperature J 5 C Storage temperature range T Stg 4 to +5 T Isolation voltage V J = 25 C, all terminals shorted, ISOL 35 V f = 5 Hz, t = s Notes Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur () V CC = 3 V, V GE = 5 V, L = 5 μh, R g = 4.7, T J = 5 C ELECTRICAL SPECIFICATIONS ( unless otherwise noted) IGBT AP diode Chopper diode PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage BV CES V GE = V, I C =.5 ma V Temperature coefficient of breakdown voltage V BR(CES) /T J I C =. ma (25 C to 25 C). V/ C V GE 5 V, I C = 8 A Collector to emitter voltage V CE(on) V GE = 5 V, l C = 8 A, 2.43 V Gate threshold voltage V GE(th) V CE = V GE, I C = 75 μa V Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C =. ma (25 C to 25 C) 2 mv/ C Forward transconductance g fe V CE = 2 V, I C = 8 A 97 S Transfer characteristics V GE V CE = 2 V, I C = 8 A. V Collector to emitter leakage current I CES V GE = V, V CE = V,. ma V GE = V, V CE = V 8 μa Gate to emitter leakage I GES V GE = ± 2 V ± 25 na Blocking voltage BV RRM I R = μa V I F = 5 A..27 Forward voltage drop V FM V I F = 5 A,.9 I F = A Forward voltage drop V FM I F = A,.87 Blocking voltage BV RM I R = μa V RRM = V 2 7 Reverse leakage current I RM V RRM = V, 2 V μa Revision: 8Mar8 2 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 VS5MTWDF SWITCHING CHARACTERISTICS ( unless otherwise noted) PFC IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turnon) Gate to emitter charge (turnon) Gate to collector charge (turnon) Q g Q ge Q gc IC = A V CC = 4 V V GE = 5 V Turnon switching loss E on.5 Turnoff switching loss E off 2. Total switching loss E tot I C = 5 A, V CC = 3 V, 3.7 Turnon delay time t d(on) V GE = 5 V, R g = 4.7, 73 Rise time t r L = 5 μh, () 79 Turnoff delay time t d(off) 374 Fall time t f Turnon switching loss E on. Turnoff switching loss E off 2.75 Total switching loss E tot I C = 5 A, V CC = 3 V, 3.4 Turnon delay time t d(on) V GE = 5 V, R g = 4.7, 7 Rise time t r L = 5 μh, () 8 Turnoff delay time t d(off) 389 Fall time t f 9 Input capacitance C ies VGE = V 4 2 Output capacitance C oes V CC = 3 V Reverse transfer capacitance C res f = MHz 74 Reverse bias safe operating area Note () Energy losses include tail and diode reverse recovery RBSOA I C = 33 A, V CC = 3 V, V P = V, R g = 4.7, V GE = 5 V, L = 5 μh, T J = 5 C Full square nc mj ns mj ns pf RECOVERY PARAMETER ( unless otherwise noted) AP diode Chopper diode PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Peak reverse recovery current I rr IF = A A Reverse recovery time t rr di/dt = 2 A/μs 4 ns Reverse recovery charge Q rr V rr = 2 V 537 nc Peak reverse recovery current I rr IF = 5 A 4.7 A Reverse recovery time t rr di/dt = 2 A/μs 73 ns Reverse recovery charge Q rr V rr = 2 V 7 nc Peak reverse recovery current I rr IF = 5 A.3 A Reverse recovery time t rr di/dt = 2 A/μs 4 ns Reverse recovery charge Q rr V rr = 2 V, 7 nc THERMISTOR ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R 3 B value B /T J = 85 C 4 K Revision: 8Mar8 3 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 VS5MTWDF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS IGBT Junction to case IGBT thermal resistance.23 AP FRED Pt Junction to case diode thermal resistance 5. R thjc FRED Pt Junction to case diode thermal resistance 2.2 C/W Case to sink, flat, greased surface per module R thcs. C/W Mounting torque ± % to heatsink () 4 Nm Approximate weight 5 g Note () A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Allowable Case Temperature ( C) Fig. Allowable Case Temperature vs. Continuous Collector Current (Maximum IGBT Continuous Collector Current vs. Case Temperature) DC I C Continuous Collector Current (A) V CE (V) T J = 5 C Fig. 3 I C vs. V CE (Typical IGBT Output Characteristics, V GE = 5 V) V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V V CE (V) V CE (V) Fig. 2 I C vs. V CE (IGBT Reverse BIAS SOA, T J = 5 C, V GE = 5 V) Fig. 4 I C vs. V CE (Typical IGBT Output Characteristics, ) Revision: 8Mar8 4 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 VS5MTWDF V CE = 2 V I F (A) T J = 5 C V GE (V) V FM (V) Fig. 5 I C vs. V GE (Typical IGBT Transfer Characteristics) Fig. 8 I F vs. V FM (Typical Antiparallel Diode Forward Characteristics) V GEth (V) I C (ma) Fig. V GEth vs. I C (Typical IGBT Gate Threshold Voltage) Allowable Case Temperature ( C) Fig. 9 Allowable Case Temperature vs. Continuous Forward Current (Maximum Antiparallel Diode Continuous Forward Current vs. Case Temperature) DC I F Continuous Forward Current (A). T J = 5 C 4 2 I CES (ma) I F (A) T J = 5 C V CES (V) V FM (V) Fig. 7 I CES vs. V CES (Typical IGBT Zero Gate Voltage Collector Current) Fig. I F vs. V FM (Typical Chopper Diode Forward Characteristics) Revision: 8Mar8 5 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 VS5MTWDF Allowable Case Temperature ( C) I F Continuous Forward Current (A) Fig. Allowable Case Temperature vs. Continuous Forward Current (Maximum Chopper Diode Continuous Forward Current vs. Case Temperature) DC Switching Time (ns) t d(off) t d(on) t f t r Fig. 4 Switching Time vs. I C (Typical IGBT Switching Time vs. I C ), V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh. T J = 5 C 9 8 I RM (ma).. Energy (mj) Eoff Eon V R (V) R g (Ω) Fig. 2 I RM vs. V R (Typical Chopper Diode Reverse Leakage Current) Fig. 5 Energy Loss vs. R g (Typical IGBT Energy Loss vs. R g ), V CC = 3 V, I C = 5 A, V GE = 5 V, L = 5 μh Energy (mj) Eoff Eon Switching Time (ns) t d(off) t d(on) t r t f R g (Ω) Fig. 3 Energy Loss vs. I C (Typical IGBT Energy Loss vs. I C ), V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. Switching Time vs. R g (Typical IGBT Switching Time vs. R g ), V CC = 3 V, I C = 5 A, V GE = 5 V, L = 5 μh Revision: 8Mar8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 VS5MTWDF t rr (ns) 4 2 t rr (ns) Fig. 7 t rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Time vs. di F /dt) V rr = 2 V, I F = A Fig. 2 t rr vs. di F /dt (Typical Chopper Diode Reverse Recovery Time vs. di F /dt) V rr = 2 V, I F = 5 A 3 2 I rr (A) I rr (A) Fig. 8 I rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Current vs. di F /dt) V rr = 2 V, I F = A Fig. 2 I rr vs. di F /dt (Typical Chopper Diode Reverse Recovery Current vs. di F /dt) V rr = 2 V, I F = 5 A Q rr (nc) 3 9 Q rr (nc) Fig. 9 Q rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = A Fig. 22 Q rr vs di F /dt (Typical Chopper Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = 5 A Revision: 8Mar8 7 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 VS5MTWDF Z thjc Thermal Impedance Junction to Case ( C/W) DC t Rectangular Pulse Duration (s) Fig. 23 Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics (IGBT)) Z thjc Thermal Impedance Junction to Case ( C/W) DC t Rectangular Pulse Duration (s) Fig. 24 Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics (Chopper Diode)) CIRCUIT CONFIGURATION E F Q A7 E D D3 Th I L E7 G D2 G7 M7 A B Q4 D4 M2 M3 Revision: 8Mar8 8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 VS5MTWDF ORDERING INFORMATION TABLE Device code VS 5 MT W DF product Current rating (5 = 5 A) Essential part number (MT = MTP package) Voltage code x = voltage rating (example: = V) Die IGBT technology (W = warp speed IGBT) Circuit configuration (DF = dual forward) Dimensions LINKS TO RELATED DOCUMENTS Revision: 8Mar8 9 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 Outline Dimensions MTP Full Pin DIMENSIONS in millimeters 3. 2 ± ±.3 2. ± Ø. ±.25 z detail 2.5 ±. 3 7 ±.3 Use Self Tapping Screw 45 ±. or M2.5 x X. e.g. M2.5 x or M2.5 x 8.8 Ra 3.5 ±.5 according to PCB thickness used ± ±.5 4. A B C D E F G H I L M 9.8 ± X ± ±.5 Ø 5 (x 4) 27.5 ±.3 Ø 2. (x 4) 2 R 2. (x 2) PINS POSITION WITH TOLERANCE Ø. Revision: 4Sep Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9
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