Full Bridge IGBT MTP (Warp Speed IGBT), 50 A

Transcription

1 Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al 2 O 3 DBC Very low stray inductance design for high speed operation Speed 8 khz to 30 khz > 20 khz hard switching, > 200 khz resonant mode UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Optimized for welding, UPS and SMPS applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 600 V T C = 25 C 69 Continuous collector current T C = 80 C 46 Pulsed collector current M 200 Peak switching current I LM 200 A Diode continuous forward current I F T C = C 25 Peak diode forward current I FM 200 Gate to emitter voltage V GE ± 20 RMS isolation voltage V ISOL Any terminal to case, t = minute 2500 V Maximum power dissipation T C = 25 C 95 P per single IGBT D T C = C 78 W Revision: 09-Oct-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = 0 V, = 250 μa V Temperature coefficient of breakdown voltage V (BR)CES / T J V GE = 0 V, = 4 ma (25 C to 25 C) V/ C Note () ES includes also opposite leg overall leakage Note () Standard version only i.e. without optional thermistor V GE = 5 V, = 25 A Collector to emitter saturation voltage V CE(on) V GE = 5 V, = 50 A V GE = 5 V, = 25 A, T J = 50 C V V GE = 5 V, = 50 A, T J = 50 C Gate threshold voltage V GE(th) V CE = V GE, = 250 μa 3-6 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, = 250 μa (25 C to 25 C) mv/ C Transconductance g fe V CE = V, = 25 A, PW = 80 μs S V GE = 0 V, V CE = 600 V, T J = 25 C μa Zero gate voltage collector current ES () V GE = 0 V, V CE = 600 V, T J = 50 C ma Gate to emitter leakage current I GES V GE = ± 20 V - - ± 250 na Diode forward voltage drop SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) V FM = 25 A = 50 A = 25 A; T J = 50 C = 50 A; T J = 50 C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g IC = 25 A Gate to emitter charge (turn-on) Q ge V CC = 480 V nc Gate to collector charge (turn-on) Q gc V GE = 5 V Turn-on switching loss E on Rg = 5, I = 25 A C Turn-off switching loss E off V CC = 480 V Total switching loss E tot V GE = ± 5 V, T J = 25 C Turn-on switching loss E on Rg = 5, = 25 A mj Turn-off switching loss E off V CC = 480 V Total switching loss E tot V GE = ± 5 V, T J = 25 C Input capacitance C ies VGE = 0 V Output capacitance C oes V CC = 30 V pf Reverse transfer capacitance C res f =.0 MHz Diode reverse recovery time t rr ns Diode peak reverse current I rr V R = 200 V; A Diode Recovery charge Q rr = 25 A; nc di/dt = 200 A/μs Diode peak rate of fall of di recovery during t (rec)m /dt A/μs b THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction temperature range T J C Storage temperature range T Stg Junction to case IGBT R thjc Diode C/W Case to sink per module R thcs Heatsink compound thermal conductivity = W/mK Clearance () Externel shortest distance in air between 2 terminals Creepage () Shortest distance along external surface of the mm insulating material between 2 terminals Weight 66 g Revision: 09-Oct-7 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT V

3 thjc V CE, Collector-to Emitter Voltage (V) T C Case Temperature ( C) = 50A 80 = 25A = A Maximum DC Collector Current (A) T J, Junction Temperature ( C) Fig. - Maximum Collector Current vs. Case Temperature Fig. 2 - Typical Collector to Emitter Voltage vs. Junction Temperature D = 0.5 Thermal Response (Z thjc ) D = 0.2 D = 0. D = 0.05 D = 0.02 D =0.0 Single Pulse (Thermal Response) t, Rectangular Pulse Duration (sec) Fig. 3 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 0 Thermal Response (Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode) Revision: 09-Oct-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 Switching Losses (mj), Collector-to-Emitter Current (A) V GE, Gate-to-Emitter Voltage (V) Switching Losses (mj) Capacitance (pf) Total Switching Losses (mj) Cies V GE = 0V, f = MHZ C = C +C, C SHORTED ies ge gc ce C res = C gc C = C + C oes ce gc 0 R G = 5.0Ω V GE = 5V V CC = 480V = 50A 4000 = 25A Coes = 2.5A 0 Cres V CE (V) Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage T J, Junction Temperature ( C) Fig. 8 - Typical Switching Losses vs. Junction Temperature = 25A V CE = 480V R G = 5.0Ω TJ = 25 C V GE = 5V V CC = 480V E OFF E ON Q G, Total Gate Charge (nc) Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage , Collector Current (A) Fig. 9 - Typical Switching Losses vs. Collector to Emitter Current.5 V CC = 480V V GE = 5V T J = 25 C = 25A 0 V GE = 20V T J = 25.0 E OFF E ON R G, Gate Resistance ( Ω) Fig. 7 - Typical Switching Losses vs. Gate Resistance SAFE OPERATING AREA 0 0 V CE, Collector-to-Emitter Voltage (V) Fig. 0 - Turn-Off SOA Revision: 09-Oct-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Instantaneous Forward Current - I F (A) 0 T J = 50 C T J = 25 C T J = 25 C Forward Voltage Drop - V F (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Irr- ( A) V R= 200V T J = 25 C T J = 25 C I F = 50A I F = 25A I F = 0A di f/dt - (A/μs) 0 Fig. 3 - Typical Reverse Recovery Current vs. di F /dt A V R = 200V T J = 25 C T J = 25 C V = 200V R T J = 25 C T J = 25 C 0 I F = 50A trr- (nc) I F = 50A I F = 25A I F = 0A Qrr- (nc) I F = 25A I F = 0A di f /dt - (A/μs) 0 0 di f /dt - (A/μs) 0 Fig. 2 - Typical Reverse Recovery Time vs. di F /dt Fig. 4 - Typical Stored Charge vs. di F /dt 00 V R = 200V T J = 25 C T J = 25 C di (rec) M/dt- (A /μs) 0 I F = 50A I F = 25A I F = 0A di f /dt - (A/μs) 0 A Fig. 5 - Typical di (rec)m /dt vs. di F /dt Revision: 09-Oct-7 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 9, , 4 5, , 2 Fig. 6 - Electrical diagram ORDERING INFORMATION TABLE Device code VS- 25 MT 060 W F A PbF product 2 - Current rating (25 = 25 A) 3 - Essential part number 4 - Voltage code (060 = 600 V) 5 - Speed / type (W = warp IGBT) 6 - Circuit configuration (F = full bridge) 7 - A = Al 2 O 3 DBC substrate 8 - PbF = lead (Pb)-free CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: 09-Oct-7 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Outline Dimensions MTP DIMENSIONS in millimeters 2 ± ± ± 0.3 Ø. ± z detail ± ± ± ± 0.3 Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used 0.8 Ra ± ± ± ± Ø 2. (x 4) R 2.6 (x 2) Dia. 5 (x 4) 27.5 ± 0.3 Pins position with tolerance Note Unused terminals are not assembled in the package Revision: 0-Jul-5 Document Number: 9575 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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