Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A

Transcription

1 VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery PRIMARY CHARACTERISTICS V CES I C at T C = 9 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit configuration MTP V A 3.9 V khz to 3 khz MTP Full bridge Low diode V F Square RBSOA Al O 3 DBC substrate Very low stray inductance design for high speed operation UL approved file E799 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Optimized for welding, UPS and SMPS applications Rugged with ultrafast performance Outstanding ZVS and hard switching operation Low EMI, requires less snubbing Excellent current sharing in parallel operation Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V CES V Continuous collector current I C T C = 9 C Pulsed collector current I CM Clamped inductive load current I LM A Diode maximum forward current I FM Gate to emitter voltage V GE ± RMS isolation voltage V ISOL Any terminal to case, t = min 5 V T C = 5 C Maximum power dissipation (only IGBT) P D T C = C 9 W Operating junction temperature range T J to +5 C Revision: 9Oct7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VSMTUFAPbF ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa V Temperature coefficient of breakdown voltage V (BR)CES / T J V GE = V, I C = 3 ma (5 to 5 C) +.3 V/ C Note () I CES includes also opposite leg overall leakage V GE = 5 V, I C = A V GE = 5 V, I C = A.. Collector to emitter saturation voltage V CE(on) V GE = 5 V, I C = A, T J = 5 C 3.7. V GE = 5 V, I C = A, T J = 5 C V V GE = 5 V, I C = A, T J = 5 C Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = 3 ma (5 to 5 C) mv/ C Transconductance g fe V CE = 5 V, I C = A, PW = μs 7.5 S Zero gate voltage collector current I () CES V GE = V, V CE = V, T J = 5 C.7 3. V GE = V, V CE = V, T J = 5 C.9 9. ma V GE = V, V CE = V, T J = 5 C 5 μa Gate to emitter leakage current I GES V GE = ± V ± 5 na SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turnon) Q g IC = A 7 Gate to emitter charge (turnon) Q ge V CC = V 9 3 nc Gate to collector charge (turnon) Q gc V GE = 5 V 9 3 Turnon switching loss E on V CC = V, I C = A, V GE = 5 V, Turnoff switching loss E off R = 5, L = μh, T = 5 C, g J energy losses include tail and..3 Total switching loss E tot diode reverse recovery Turnon switching loss E on V CC = V, I C = A, V GE = 5 V, mj Turnoff switching loss E off R g = 5, L = μh, T J = 5 C, energy losses include tail and..95 Total switching loss E tot diode reverse recovery.5.3 Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V 3 5 pf Reverse transfer capacitance C res f =. MHz 7 7 Reverse bias safe operating area Short circuit safe operating area RBSOA SCSOA T J = 5 C, I C = A V CC = V, V p = V R g = 5, V GE = + 5 V to V T J = 5 C V CC = 9 V, V p = V R g = 5, V GE = + 5 V to V Fullsquare μs DIODE SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I C = A..9 I C = A Diode forward voltage drop V FM I C = A, T J = 5 C.. V I C = A, T J = 5 C 3.5. I C = A, T J = 5 C..93 Reverse recovery energy of the diode E rec VGE = 5 V, R g = 5, L = μh 3 μj Diode reverse recovery time t rr V CC = V, I C = A 9 5 ns Peak reverse recovery current I rr T J = 5 C 33 5 A Revision: 9Oct7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 P tot (W) I C (A) I C (A) VSMTUFAPbF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction temperature range T J 5 C Storage temperature range T Stg 5 Junction to case IGBT.53. R thjc Diode.9.3 Case to sink per module R thcs Heatsink compound thermal conductivity = W/mK. Clearance External shortest distance in air between terminals 5.5 Creepage Shortest distance along external surface of the insulating material between terminals Mounting torque A mounting compound is recommended and the torque should be checked after 3 hours to allow for 3 ± % Nm the spread of the compound. Lubricated threads. Weight g C/W mm DC µs TC ( C). µs ms DC I C (A) Fig. Maximum DC Collector Current vs. Case Temperature. Fig. 3 Forward SOA T C = 5 C; T J 5 C T C ( C) Fig. Power Dissipation vs. Case Temperature Fig. Reverse Bias SOA T J = 5 C; V GE = 5 V Revision: 9Oct7 3 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 I CE (A) I CE (A) I CE (A) I F (A) VSMTUFAPbF V GE = V VGE = 5V VGE = V VGE = V VGE =.V C 5 C 5 C V F (V) Fig. 5 Typical IGBT Output Characteristics T J = C; t p = μs Fig. Typical Diode Forward Characteristics t p = μs V GE = V VGE = 5V VGE = V VGE = V VGE =.V I CE = A I CE = A I CE = A 5 5 V GE (V) Fig. Typical IGBT Output Characteristics T J = 5 C; t p = μs Fig. 9 Typical V CE vs. V GE T J = C V GE = V VGE = 5V VGE = V VGE = V VGE =.V I CE = A I CE = A I CE = A 5 5 V GE (V) Fig. 7 Typical IGBT Output Characteristics T J = 5 C; t p = μs Fig. Typical V CE vs. V GE T J = 5 C Revision: 9Oct7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Energy (µj) Swiching Time (ns) I CE (A) Energy (µj) VSMTUFAPbF I CE = A I CE = A I CE = A Swiching Time (ns) td OFF t F td ON t R V GE (V) I C (A) Fig. Typical V CE vs. V GE T J = 5 C Fig. Typical Switching Time vs. I C T J = 5 C; L =. mh; V CE = V R g = ; V GE = 5 V 3 5 T J = 5 C T J = 5 C E ON 5 E OFF V GE (V) 3 5 R G (Ω) Fig. Typical Transfer Characteristics V CE = 5 V; t p = μs Fig. 5 Typical Energy Loss vs. R g T J = 5 C; L =. mh; V CE = V I CE = 5. A; V GE = 5 V E ON td OFF t F E OFF td ON t R I C (A) R G (Ω) Fig. 3 Typical Energy Loss vs. I C T J = 5 C; L =. mh; V CE = V R g = 5 ; V GE = 5 V Fig. Typical Switching Time vs. R g T J = 5 C; L =. mh; V CE = V I CE = 5. A; V GE = 5 V Revision: 9Oct7 5 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 I RR (A) V GE (V) I RR (A) Capacitance (pf) I RR (A) Q RR (µc) VSMTUFAPbF 3. R G = 5.Ω.5 5.Ω 3 R G = Ω. Ω 3A R G = 3 Ω.5 3Ω A R G = 5 Ω. 5Ω A I F (A). di F /dt (A/µs) Fig. 7 Typical Diode I rr vs. I F T J = 5 C Fig. Typical Diode Q rr V CC = V; V GE = 5 V; T J = 5 C Cies 3 Coes Cres 3 5 R G (Ω) Fig. Typical Diode I rr vs. R g T J = 5 C; I F = 5. A Fig. Typical Capacitance vs. V CE V GE = V; f = MHz 35 V di F /dt (A/µs) Q G, Total Gate Charge (nc) Fig. 9 Typical Diode I rr vs. di F /dt V CC = V; V GE = 5 V; I CE = 5. A; T J = 5 C Fig. Typical Gate Charge vs. V GE I CE = 5. A; L = μh Revision: 9Oct7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VSMTUFAPbF D =.5 Thermal Response (ZthJC)... D =. D =. D =.5 D =. D =. Single Pulse (Thermal Response) t, Rectangular Pulse Duration (sec) Fig. 3 Maximum Transient Thermal Impedance, JunctiontoCase (IGBT) Thermal Response (ZthJC)... D =.5 D =. D =. D =.5 D =. D =. Single Pulse (Thermal Response) t, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, JunctiontoCase (Diode) L L K D.U.T. + V CC V + R g D.U.T V Fig. 5 Gate Charge Circuit (TurnOff) Fig. RBSOA Circuit Revision: 9Oct7 7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VSMTUFAPbF Driver Diode clamp/ D.U.T. + L D C D.U.T. + 9 V 5 V D.U.T./ driver + V CC R g Fig. 7 S.C. SOA Circuit 9, Fig. Switching Loss Circuit 3 5 3, 5, 7, Fig. 9 Electrical diagram ORDERING INFORMATION TABLE Device code VS MT U F A PbF product Current rating ( = A) Essential part number Voltage code ( = V) Speed / type (U = ultrafast IGBT) Circuit configuration (F = full bridge) 7 A = Al O 3 DBC substrate Lead (Pb)free Revision: 9Oct7 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 VSMTUFAPbF CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: 9Oct7 9 Document Number: 97 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 MTP MOSFET/IGBT FullBridge Outline Dimensions DIMENSIONS in millimeters Ø 5 Ø. ± ±. Ø 5. x 3 ±. 7. ±. 7. ± ±..3 ±. 3 ±. 3 ±. 5.3 ± ±. ±. 7 ±. 7. ±. R5.75 (x ).9 ±.. ± ±.5. x h. Document Number: 955 For technical questions, contact: indmodules@vishay.com Revision: Sep

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