Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

Transcription

1 VS-ETF..SPbF Series Surface Mount Fast Soft Recovery Rectifier Diode, A TO-63AB (D PAK) PRODUCT SUMMARY 3 Base cathode + 3 Anode - - Anode Package TO-63AB (D PAK) I F(AV) A V R V, V V F at I F.33 V I FSM 55 A t rr ns T J max. 5 C Diode variation Single die Snap factor.6 FEATURES Glass passivated pellet chip junction Meets MSL level, per J-STD-, LF maximum peak of 6 C Designed and qualified according to JEDEC -JESD 7 Material categorization: for definitions of compliance please see APPLICATIONS Output rectification and freewheeling in inverters, choppers and converters Input rectifications where severe restrictions on conducted EMI should be met DESCRIPTION The VS-ETF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Sinusoidal waveform A V RRM / V I FSM 55 A V F A, T J = 5 C.33 V t rr A, A/μs ns T J Range - to +5 C VOLTAGE RATINGS PART NUMBER V RRM, MAXIMUM PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-ETFSPbF VS-ETFSPbF 3 I RRM AT 5 C ma ABSOLUTE MAXIMUM RATINGS Maximum average forward current I F(AV) T C = 5 C, conduction half sine wave Maximum peak one cycle non-repetitive ms sine pulse, rated V RRM applied 3 A I FSM surge current ms sine pulse, no voltage reapplied 55 Maximum I t for fusing I ms sine pulse, rated V RRM applied 5 t A s ms sine pulse, no voltage reapplied Maximum I t for fusing I t t =. ms to ms, no voltage reapplied A s Revision: -Feb-6 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-ETF..SPbF Series ELECTRICAL SPECIFICATIONS Maximum forward voltage drop V FM A, T J = 5 C.33 V Forward slope resistance r t.9 m T J = 5 C Threshold voltage V F(TO).96 V T J = 5 C. Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 C ma RECOVERY CHARACTERISTICS Reverse recovery time t rr I F at A pk 3 ns I FM Reverse recovery current I rr 5 A/μs.7 A Reverse recovery charge Q rr 5 C.5 μc dir dt t rr Q rr t Typical snap factor S.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS Maximum junction and storage temperature range T J, T Stg - to +5 C Maximum thermal resistance, junction to case R thjc DC operation.5 Maximum thermal resistance, junction to ambient (PCB mount) R () thja 6 C/W Soldering temperature T S 6 C Approximate weight Marking device Case style D PAK (SMD-) Note () When mounted on " square (65 mm ) PCB of FR- or G- material oz. ( μm) copper C/W. For recommended footprint and soldering techniques refer to application note #AN-99. g.7 oz. ETFS ETFS Revision: -Feb-6 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-ETF..SPbF Series Maximum Allowable Case Temperature ( C) R thjc (DC) =.5 C/W Conduction angle Maximum Average Forward Power Loss (W) 6 DC RMS limit Conduction period T J = 5 C 6 6 Fig. - Current Rating Characteristics Fig. - Forward Power Loss Characteristics Maximum Allowable Case Temperature ( C) 5 5 R thjc (DC) =.5 C/W 35 Conduction period DC Peak Half Sine Wave Forward Current (A) 3 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 5 C at 6 Hz.3s at 5 Hz.s VS-ETF..S Series 3 Fig. - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) 6 6 RMS limit Conduction angle T J = 5 C Peak Half Sine Wave Forward Current (A) Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-ETF..S Series.. Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: -Feb-6 3 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-ETF..SPbF Series Instantaneous Forward Current (A) T J = 5 C T J = 5 C Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Q rr - Typical Reverse Recovery Charge (µc) T J = 5 C 6 Fig. - Recovery Charge Characteristics, T J = 5 C t rr - Typical Reverse Recovery Time (µs) T J = 5 C Q rr - Typical Reverse Recovery Charge (µc) 5 3 T J = 5 C 6 Fig. - Recovery Time Characteristics, T J = 5 C 6 Fig. - Recovery Charge Characteristics, T J = 5 C t rr - Typical Reverse Recovery Time (µs)..6.. T J = 5 C I rr - Typical Reverse Recovery Current (A) 6 T J = 5 C 6 Fig. 9 - Recovery Time Characteristics, T J = 5 C 6 Fig. - Recovery Current Characteristics, T J = 5 C Revision: -Feb-6 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-ETF..SPbF Series I rr - Typical Reverse Recovery Current (A) T J = 5 C 6 Fig. 3 - Recovery Current Characteristics, T J = 5 C Z thjc - Transient Thermal Impedance ( C/W).. Single pulse D =.5 D =.33 D =.5 D =.7 D =..... Square Wave Pulse Duration (s) Fig. - Thermal Impedance Z thjc Characteristics Steady state value (DC operation) Revision: -Feb-6 5 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-ETF..SPbF Series ORDERING INFORMATION TABLE Device code VS- E T F S TRL PbF product - Current rating ( = A) 3 - Circuit configuration: E = single diode - Package: T = D PAK (TO-AC) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x = V RRM 7 - S = surface mountable - None = tube 9 TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) - PbF = lead (Pb)-free = V = V ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETFSPbF 5 Antistatic plastic tubes VS-ETFSTRRPbF 3" diameter reel VS-ETFSTRLPbF 3" diameter reel VS-ETFSPbF 5 Antistatic plastic tubes VS-ETFSTRRPbF 3" diameter reel VS-ETFSTRLPbF 3" diameter reel Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS Revision: -Feb-6 6 Document Number: 99 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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