40HF(R) SERIES 40 A STANDARD RECOVERY DIODES. Stud Version. Features. Typical Applications. Major Ratings and Characteristics

Transcription

1 HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available A Types up to 16V V RRM Typical Applications Battery charges Converters Power supplies Machine tool controls Major Ratings and Characteristics Parameters HF(R) to 1 1 to 16 Units I F(AV) T C 1 1 C I F(RMS) 62 A I 5Hz 57 6Hz 595 A I 2 5Hz 16 A2 6Hz 145 A 2 s V RRM range to 1 1 to 16 V T J range - 65 to to 16 C case style DO-3AB (DO-5) 1

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM, maximum V RSM, maximum non- V R(BR), minimum I RRM Type number Code repetitive peak repetitive peak T J = T J reverse voltage reverse voltage voltage V V V (1) ma HF(R) (1) Avalanche version only available from V RRM V to 16V. Forward Conduction Parameter HF(R) to 1 1 to 16 Units Conditions I F(AV) Max. average forward current A conduction, half sine Case temperature 1 1 C I F(RMS) Max. RMS forward current 62 A P R Maximum non-repetitive 11 K W µs square pulse, T J = T J peak reverse power see note (2) I FSM Max. peak, one-cycle forward, 57 t = ms No voltage non-repetitive surge current 595 t = 8.3ms reapplied A 48 t = ms % V RRM 5 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 16 t = ms No voltage Initial T J = T J 145 t = 8.3ms reapplied A 2 s 1 t = ms % V RRM 5 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 16 A 2 s t =.1 to ms, no voltage reapplied V F(TO)1 Low level value of threshold.65 (16.7% x π x I F(AV) < I < π x I F(AV) ), T J = T J voltage V V F(TO)2 High level value of threshold.7 (I > π x I F(AV) ), T J = T J voltage r Low level value of forward f1 slope resistance 4.29 (16.7% x π x I F(AV) < I < π x I F(AV) ), T J = T J r f2 mω High level value of forward slope resistance 3.98 (I > π x I F(AV) ), T J = T J V FM Max. forward voltage drop 1.3 V I pk = 125A, T J = 25 C, t p = µs rectangular wave (2) Available only for Avalanche version, all other parameters the same as HF. 2

3 Thermal and Mechanical Specifications HF(R) Parameter to 1 1 to 16 Units Conditions T J Max. junction operating temperature range -65 to to 16 T stg Max. storage temperature range -65 to to 16 C R thjc Max. thermal resistance, junction to case 1. DC operation R thcs Max. thermal resistance, case K/W Mounting surface, smooth, flat and.25 to heatsink greased T Max. allowed mounting torque ±% Nm Not lubricated threads - 3 lbf in wt Approximate weight 17 (.6) g (oz) Case style DO-3AB (DO5) See Outline Table R thjc Conduction (The following table shows the increment of thermal resistence R thjc when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions.14. T J = T J K/W Ordering Information Table Device Code HF R 16 M = Standard device 41 = Not isolated lead 42 = Isolated lead with silicone sleeve (Red = Reverse polarity) (Blue = Normal polarity) 2 - HF = Standard diode HA = Avalanche diode 3 - None = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 4 - Voltage code: Code x = V RRM (See Voltage Ratings table) 5 - None = Stud base DO-3AB (DO-5) 1/4" 28UNF-2A M = Stud base DO-3AB (DO-5) M6 X 1 - (Not available for Avalanche diodes) 3

4 Outlines Table HF(R) Case Style DO-3AB (DO-5) All dimensions in millimeters (inches) 41HF(R) Case Style DO-3AB (DO-5) All dimensions in millimeters (inches) 4

5 (V to 1V) R thjc (DC) = 1. K/W (V to 1V) R (DC) = 1. K/W thjc DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics (1V to 16V) R thjc (DC) = 1. K/W (1V to 16V) R thjc (DC) = 1. K/W 1 1 DC Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics RMS Limit 5 (V to 1V) T J = 1C K/W 1. Fig. 5 - Forward Power Loss Characteristics 5

6 6 5 3 RMS Limit DC 1 (V to 1V) T J = 1C K/W 1. Fig. 6 - Forward Power Loss Characteristics RMS Limit 5 (1V to 16V) T J = 1C K/W 1. Fig. 7 - Forward Power Loss Characteristics DC 1 RMS Limit (1V to 16V) T J = 1C K/W 1. Fig. 8 - Forward Power Loss Characteristics 6

7 Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = T J 6 Hz.83 5 Hz. s 1 Peak Half Sine Wave Forward Current (A) 6 Maximum Non Repetitive Surge Current 55 Versus Pulse Train Duration. 5 Initial T J = T J Max. No Voltage Reapplied 45 Rated V RRM Reapplied Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) T = 25 C J T J = T J Max Transient Thermal Impedance Z (K/W) thjc Steady State Value R = 1. K/W thjc (DC Operation) Instantaneous Forward Voltage (V) Square Wave Pulse Duration (s) Fig Forward Voltage Drop Characteristics Fig Thermal Impedance Z thjc Characteristics WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245 U.S.A. Tel: (3) Fax: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (95) Fax: (95) IR GERMANY: Saalburgstrasse 157, 6135 Bad Homburg. Tel: Fax: IR ITALY: Via Liguria 49, 71 Borgaro, Torino. Tel: Fax: IR FAR EAST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore Tel: IR TAIWAN: 16 Fl. Suite D.7, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 7