Maximum Power Dissipation W C
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1 PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available Fully isolated package ( 2,5 volt AC) Very low internal inductance ( 5 nh typ.) Industry standard outline G E n-channel V CES = 6V V CE(on) typ. GE = 5V, I C = A Benefits Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Absolute Maximum Ratings SOT-227 Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 6 V I T C = 25 C Continuous Collector Current 2 I T C = C Continuous Collector Current A I CM Pulsed Collector Current 4 I LM Clamped Inductive Load Current 4 V GE Gate-to-Emitter Voltage ± 2 V E ARV Reverse Voltage Avalanche Energy ƒ 55 mj V ISOL RMS Isolation Voltage, Any Terminal to Case, t= min 25 V P T C = 25 C T J Maximum Power Dissipation Operating Junction to + 5 P T C = C T STG Maximum Power Dissipation Storage Temperature Range to + 5 W C Mounting Torque, 6-32 or M3 Screw 2 lbf in(.3n m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.2 C/W R θcs Case-to-Sink, Flat, Greased Surface.5 Wt Weight of Module 3 gm 4/24/2
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 25µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = V, I C =.A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.62 V/ C V GE = V, I C =.ma..3 I C = A V GE = 5V V CE(ON) Collector-to-Emitter Saturation Voltage.33 I C = 2A See Fig.2, 5 V.2 I C = A, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 2 ma g fe Forward Transconductance 9 5 S V CE = V, I C = A I CES Zero Gate Voltage Collector Current. V GE = V, V CE = 6V ma V GE = V, V CE = V, T J = 5 C I GES Gate-to-Emitter Leakage Current ±25 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 77 2 I C = A Q ge Gate - Emitter Charge (turn-on) 5 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) V GE = 5V t d(on) Turn-On Delay Time 78 t r Rise Time 56 T J = 25 C ns t d(off) Turn-Off Delay Time 89 3 I C = A, V CC = 48V t f Fall Time V GE = 5V, R G = 2.Ω E on Turn-On Switching Loss.98 Energy losses include "tail" E off Turn-Off Switching Loss 7.4 mj See Fig. 9,, 3 E ts Total Switching Loss t d(on) Turn-On Delay Time 72 T J = 5 C, t r Rise Time 6 I C = A, V CC = 48V ns t d(off) Turn-Off Delay Time 5 V GE = 5V, R G = 2.Ω t f Fall Time 66 Energy losses include "tail" E ts Total Switching Loss 35.7 mj See Fig.,, 3 L E Internal Emitter Inductance 5. nh Between lead, and center of the die contact C ies Input Capacitance 625 V GE = V C oes Output Capacitance 4 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 9 ƒ =.MHz Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. ( See fig. 5 ) Pulse width 8µs; duty factor.%. V CC = 8%(V CES ), V GE = 2V, L = µh, R G = 2.Ω, (See fig. 4) Pulse width 5.µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2
3 Load Current ( A ) Square wave: 6% of rated voltage For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 4W Triangular wave: Clamp voltage: 8% of rated 5 Ideal diodes A. f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T J = 5 C T = 25 J C V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 5 C T J = 25 C V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current(A) T C, Case Temperature ( C) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 8 us PULSE WIDTH I C = 4 A I C = 2 A I C = A T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 C, Capacitance (pf) VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 4V I C = A A V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 48V V GE = 5V T = 25 J C I C = 2A Total Switching Losses (mj) R G = = 2.Ω Ohm V GE = 5V V CC = 48V I C = 35A 4A I C = 2A I C = A R G, Gate Resistance (Ohm) ( Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Switching Losses (mj) 6 R G = = 2.ΩΩ Ohm T J = 5 C V CC = 48V V GE = 5V I C, Collector Current (A) V GE = 2V o T J = 25 C I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector Current Fig. 2 - Turn-Off SOA 6
7 5V V L V * C D.U.T. - 48V 48µF 96V R L = 48V 4 X I C * Driver same ty pe as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 5V V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 48V 9% ƒ % V C 9% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) 7
8 SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 4.4 (.73 ) 4.2 (.65 ) 2.5 (.492 ) 7.5 (.295 ) 2. (.82 ).9 (.75 ) (.58 ) 37.8 (.488 ) 25.7 (.2 ) 25.2 (.992 ) -B- -A- 3.2 (.89 ) 29.8 (.73 ) 8. (.39 ) 4X 7.7 (.33 ) (.246 ) 5. (.59 ) C HAM FER 2. (.79 ) X 457 R FULL.25 (. ) M C A M B M 2. (.82 ).9 (.75 ) -C-.2 (.5 ) 4 E LEAD ASSIGMENTS C E G IGBT A K2 K A2 HEXFRED ES CD ES HEXFET IGBT G (.484 ).8 (.464 ) Tube QUANTITIES PER TUBE IS M4 SREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: () IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: () IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 () IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: () IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-() Data and specifications subject to change without notice. 4/ 8
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