IRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C
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1 PDP TRENCH IGBT PD Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters V CE min 33 V V CE(ON) I C = 2A 1.35 V I RP T C = 25 C 16 A T J max 15 C C C G E C G Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V CE(on) and low E PULSE TM rating per silicon area which improve panel efficiency. Additional features are 15 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. E n-channel D-Pak G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V GE Gate-to-Emitter Voltage ±3 V I T C = 25 C Continuous Collector Current, V 15V 4 I T C = 1 C Continuous Collector, V 15V 2 A I T C = 25 C Repetitive Peak Current c 16 P C = 25 C Power Dissipation 78 W P C = 1 C Power Dissipation Linear Derating Factor T J Operating Junction and W/ C -4 to + 15 T STG Storage Temperature Range C Soldering Temperature for 1 seconds 3 Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case d 1.6 C/W 1 3/31/1
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV CES Collector-to-Emitter Breakdown Voltage 33 V V GE = V, I CE = 25μA ΔΒV CES /ΔT J Breakdown Voltage Temp. Coefficient.4 V/ C Reference to 25 C, I CE = 1mA V GE = 15V, I CE = 12A e 1.35 V GE = 15V, I CE = 2A e V CE(on) Static Collector-to-Emitter Voltage 1.75 V V GE = 15V, I CE = 4A e 2.14 V GE = 15V, I CE = 6A e 1.41 V GE = 15V, I CE = 2A, T J = 15 C e V GE(th) Gate Threshold Voltage V V CE = V GE, I CE = 1.mA ΔV GE(th) /ΔT J Gate Threshold Voltage Coefficient -1 mv/ C I CES Collector-to-Emitter Leakage Current 1. 1 V CE = 33V, V GE = V μa V CE = 33V, V GE = V, T J = 125 C 75 V CE = 33V, V GE = V, T J = 15 C I GES Gate-to-Emitter Forward Leakage 1 na V GE = 3V Gate-to-Emitter Reverse Leakage -1 V GE = -3V g fe Forward Transconductance 47 S V CE = 25V, I CE = 12A Q g Total Gate Charge 33 nc V CE = 24V, I C = 12A, V GE = 15Ve Q gc Gate-to-Collector Charge 12 t d(on) Turn-On delay time 1. I C = 12A, V CC = 196V t r Rise time 13 ns R G = 1Ω, L=21μH t d(off) Turn-Off delay time 65 T J = 25 C t f Fall time 68 t d(on) Turn-On delay time 11 I C = 12A, V CC = 196V t r Rise time 14 ns R G = 1Ω, L=2μH, L S = 15nH t d(off) Turn-Off delay time 86 T J = 15 C t f Fall time 19 t st Shoot Through Blocking Time 1 ns V CC = 24V, V GE = 15V, R G = 5.1Ω L = 22nH, C=.2μF, V GE = 15V 48 E PULSE Energy per Pulse μj V CC = 24V, R G = 5.1Ω, T J = 25 C 57 L = 22nH, C=.2μF, V GE = 15V V CC = 24V, R G = 5.1Ω, T J = 1 C ESD Human Body Model Class 1C (Per JEDEC standard JESD22-A114) Machine Model Class B (Per EIA/JEDEC standard EIA/JESD22-A115) C ies Input Capacitance 88 V GE = V C oes Output Capacitance 47 pf V CE = 3V C res Reverse Transfer Capacitance 26 ƒ = 1.MHz L C Internal Collector Inductance 4.5 Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 7.5 from package and center of die contact Notes: Half sine wave with duty cycle =.5, ton=2μsec. R θ is measured at T J of approximately 9 C. ƒ Pulse width 4μs; duty cycle 2%. 2
3 I CE (A) I CE (A) I CE (A) I CE (A) I CE (A) 2 16 V GE = 18V V GE = 15V V GE = 12V V GE = 1V 2 16 V GE = 18V V GE = 15V V GE = 12V V GE = 1V 12 V GE = 8.V V GE = 6.V 12 V GE = 8.V V GE = 6.V Fig 1. Typical Output 25 C Fig 2. Typical Output 75 C V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V Fig 3. Typical Output 125 C Fig 4. Typical Output 15 C 2 14 I C = 12A T J = 25 C T J = 15 C 8 6 T J = 25 C T J = 15 C V GE (V) V GE (V) Fig 5. Typical Transfer Characteristics Fig 6. V CE(ON) vs. Gate Voltage 3
4 Energy per Pulse (μj) I C (A) Energy per Pulse (μj) Energy per Pulse (μj) I C (A) Repetitive Peak Current (A) ton= 2μs Duty cycle =.5 Half Sine Wave T C ( C) Case Temperature ( C) Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature V CC = 24V L = 22nH C = variable 1 C L = 22nH C =.4μF 1 C C C I C, Peak Collector Current (A) Fig 9. Typical E PULSE vs. Collector Current V CE, Collector-to-Emitter Voltage (V) Fig 1. Typical E PULSE vs. Collector-to-Emitter Voltage V CC = 24V L = 22nH t = 1μs half sine C=.4μF 1 1 μs μs 1 C=.3μF 1ms C=.2μF T J, Temperature (ºC) Fig 11. E PULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4
5 Capacitance (pf) V GE, Gate-to-Source Voltage (V) 1 2 I D = 12A 1 Cies V DS = 24V V DS = 15V V DS = 6V 8 1 Coes 4 1 Cres Q G Total Gate Charge (nc) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 1 D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ1 τ1 Ci= τi/ri Ci i/ri R 1 R 2 R 3 R 1 R 2 R 3 τ 2 τ 3 τ 2 τ 3 1E-6 1E t 1, Rectangular Pulse Duration (sec) R4 R4 τ4 τ4 τc τ Ri ( C/W) τι (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 A RG DRIVER C PULSE A L VCC PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test Circuit Fig 16b. t st Test Waveforms V CE Energy I C Current 1K DUT L VCC Fig 16c. E PULSE Test Waveforms Fig Gate Charge Circuit (turn-off) 6
7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR12 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 21 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFR12 116A PART NUMBER DATE CODE YEAR 1 = 21 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMB L Y LOT CODE IRFR PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 21 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at 7
8 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.3/21 8
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationn-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationIRF7328PbF. HEXFET Power MOSFET V DSS R DS(on) max I D
lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD - 9596A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationIRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.
PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More information33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG
INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and
More informationIRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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