GA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.

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1 "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-4 khz in hard switching, >2 khz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft recovery Industry standard package UL approved Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing PD - 561D GA2TD12U Ultra-Fast TM Speed IGBT V CES = 12V V CE(on) typ. = GE = 15V, I C = 2A Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V I T C = 25 C Continuous Collector Current 2 I CM Pulsed Collector Current 4 A I LM Peak Switching Current 4 I FM Peak Diode Forward Current 4 V GE Gate-to-Emitter Voltage ±2 V V ISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 25 P T C = 25 C Maximum Power Dissipation 14 W P T C = 85 C Maximum Power Dissipation 54 T J Operating Junction Temperature Range -4 to +15 C T STG Storage Temperature Range -4 to +125 Thermal / Mechanical Characteristics Parameter Typ. Max. Units R θjc Thermal Resistance, Junction-to-Case - IGBT.12 R θjc Thermal Resistance, Junction-to-Case - Diode.2 C/W R θcs Thermal Resistance, Case-to-Sink - Module.1 Mounting Torque, Case-to-Heatsink ƒ 6. N. m Mounting Torque, Case-to-Terminal 1, 2 & 3 ƒ 5. Weight of Module 4 g 1 5/27/2

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V GE = V, I C = 1mA V CE(on) Collector-to-Emitter Voltage V GE = 15V, I C = 2A 2.1 V V GE = 15V, I C = 2A, V GE(th) Gate Threshold Voltage I C = 2.5mA DV GE(th) /DT J Temperature Coeff. of Threshold Voltage -11 mv/ C V CE = V GE, I C = 2.5mA g fe Forward Transconductance 261 S V CE = 25V, I C = 2A I CES Collector-to-Emitter Leaking Current 2. ma V GE = V, V CE = 12V 2 V GE = V, V CE = 12V, V FM Diode Forward Voltage - Maximum V I F = 2A, V GE = V 3.1 I F = 2A, V GE = V, I GES Gate-to-Emitter Leakage Current 5 na V GE = ±2V Dynamic Characteristics - (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) V CC = 4V V GE = 15V Qge Gate - Emitter Charge (turn-on) nc I C = 249A Q gc Gate - Collector Charge (turn-on) T J = 25 C t d(on) Turn-On Delay Time 636 R G1 = 15Ω, R G2 = Ω, t r Rise Time 21 ns I C = 2A t d(off) Turn-Off Delay Time 65 V CC = 72V t f Fall Time 341 V GE = ±15V E on Turn-On Switching Energy 44 mj E off (1) Turn-Off Switching Energy 44 E ts (1) Total Switching Energy C ies Input Capacitance V GE = V C oes Output Capacitance 166 pf V CC = 3V C res Reverse Transfer Capacitance 322 ƒ = 1 MHz t rr Diode Reverse Recovery Time 196 ns I C = 2A I rr Diode Peak ReverseCurrent 131 A R G1 = 15Ω Q rr Diode Recovery Charge nc R G2 = Ω di (rec) M /dt Diode Peak Rate of Fall of Recovery 174 A/µs V CC = 72V During t b di/dt»1294a/µs 2

3 LOAD CURRENT (A) Square wave: 6% of rated voltage I For both: Duty cycle: 5% T sink = 9 C Gate drive as specified Power Dissipation = 16 W 2 Ideal diodes f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector Current (A) T J = 125 C T J = 25 C V GE = 15V 8µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) 1 T J = 125 C T = 25 J C V CE = 25V 8µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 15V 8 us PULSE WIDTH I C = 4 A I C = 2 A I C = A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Response (Z thjc ).1.1 D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + T C.1 A t 1, Rectangular Pulse Duration (sec) P DM t 1 t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = V, f = 1MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 4V I C = 249A 2A 1 1 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 72V V GE = 15V T = 125 J C I C = 2A Total Switching Losses (mj) RG G1 =15Ω;R = Ohm G2 = Ω V GE = 15V V CC = 72V I C = 4A I C = 2A I C = A R G, Gate Resistance (Ohm) ( Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 1 - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) RG G1 =15Ω;R = Ohm G2 = Ω T J = 15 C V CC = 72V V GE = 15V IC, Collector Current ( A) V GE = 2V V CE measured at terminal (Peak Voltage) SAFE OPERATING AREA I C, Collector Current (A) A V CE, Collector-to-Emitter Voltage (V) Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Reverse Bias SOA 2 I F = 4A Instantaneous Forward Current - IF ( A ) T J = 25 C Forward Voltage Drop - V FM (V) Fig Typical Forward Voltage Drop vs. Fig Typical Stored Charge vs. di f /dt Instantaneous Forward Current 6 QRR - ( nc) I F = 2A I = A F V R = 72V T J = 25 C di f /dt - (A/µs)

7 4 3 I F = 4A I F = 2A I F = A 25 2 V R = 72V T J = 25 C I F = 4A I F = 2A trr - ( ns ) 2 IRRM - ( A ) 15 I F = A 5 V R = 72V T J = 25 C di f /dt - (A/µs) Fig Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig Typical Recovery Current vs. di f /dt 7

8 +Vge 9% Vge Vce Ic 1% Vce Ic 9% Ic 5% Ic td(off) tf Eoff = t1+5µ S Vce ic Ic dt dt t1 Fig. 17a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f 1% +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt dt = tx Vcc 1% Ic td(on) t1 Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t1 t2 DUT VOLTAGE AND CURRENT Vpk tx 1% Vcc Irr DIODE REVERSE RECOVERY ENERGY 1% Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd Vc id Ic dt dt = t3 t3 t4 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit V L V * c D.U.T. - 6V R L = 6V 4 X I C 5V 6µF V Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit 9

10 Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. See fig. 17 ƒ For screws M6. Pulse width 5µs; single shot. Case Outline DUAL INT-A-PAK 3X M6 8 [.314] MAX [ ] [ ] X 27.4[ ] NOT ES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 2. CONT ROLLING DIMENS ION: MILLIMETER. 4X [ ] [ ] X 14.39[ ] 4X Ø [ ] [ ] [ ] 4X FASTON TAB (11) 2.8 x.5 [.11 x.2] [ ] [ ] [ ].15 [.59] CONVEX [ ] [ ] [ ] Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.5/2 1