V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
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1 AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Very high switching speed Low Turn-Off switching loss and softness Very good EMI behavior Product Summary V CE I C (T C = C) V A V CE(sat) (T J =).9V Applications Welding Machines UPS & Solar Inverters Very High Switching Frequency Applications TO-7 C G AOKBHAL G C E E Orderable Part Number Package Type Form AOKBHAL TO7 Tube Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol AOKBHAL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current T C = T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE V, Limited by T Jmax Continuous Diode T C = Forward Current T C = C Diode Pulsed Current, Limited by T Jmax T C = Power Dissipation T C = C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case V CE V GE I C I CM I LM I FM P D T J, T STG T L Symbol R θja R θjc R θjc 8 I F 9 - to Typical.. Minimum Order Quantity Units V ± V 8 A A A A A W C C Units C/W C/W C/W Rev..: December 7 Page of 9
2 AOKBHAL Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J = - - V T J = -.9. Collector-Emitter Saturation Voltage V GE =V, I C =A T J = -. - V V CE(sat) V F T J = C T J = Diode Forward Voltage V GE =V, I F =A T J = V T J = C V GE(th) Gate-Emitter Threshold Voltage V CE =V, I C =ma -. - V T J = - - Zero Gate Voltage Collector Current V CE =V, V GE =V T J = - - µa I CES T J = C - - I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS Forward Transconductance V CE =V, I C =A - - S DYNAMIC PARAMETERS C ies Input Capacitance - - pf C oes Output Capacitance V GE =V, V CC =V, f=mhz pf C res Reverse Transfer Capacitance - - pf Q g Total Gate Charge nc Q ge Gate to Emitter Charge V GE =V, V CC =V, I C =A - - nc Q gc Gate to Collector Charge nc R g Gate resistance V GE =V, V CC =V, f=mhz - - Ω SWITCHING PARAMETERS, (Load Inductive, T J =) T D(on) Turn-On DelayTime - - ns T r Turn-On Rise Time ns T D(off) Turn-Off Delay Time T J = ns T f Turn-Off Fall Time V GE =V, V CC =V, I C =A, ns E on Turn-On Energy R G =Ω -. - mj E off Turn-Off Energy mj E total Total Switching Energy -. - mj T rr Diode Reverse Recovery Time ns T J = Q rr Diode Reverse Recovery Charge µc I F =A, di/dt=a/µs, V CC =V I rm Diode Peak Reverse Recovery Current -. - A SWITCHING PARAMETERS, (Load Inductive, T J = C) T d(on) Turn-On DelayTime - - ns T r Turn-On Rise Time ns T d(off) Turn-Off Delay Time T J = C ns T f Turn-Off Fall Time V GE =V, V CC =V, I C =A, ns E on Turn-On Energy R G =Ω -. - mj E off Turn-Off Energy -. - mj E total Total Switching Energy -. - mj T rr Diode Reverse Recovery Time ns T J = C Q rr Diode Reverse Recovery Charge -. - µc I F =A, di/dt=a/µs, V CC =V I rm Diode Peak Reverse Recovery Current A APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: December 7 Page of 9
3 AOKBHAL 8 7V V V V V 9V 8 V V 7V V V 9V 7 V CE (V) Figure : Output Characteristic (T j =) V GE = 7V 7 V CE (V) Figure : Output Characteristic (T j = C) V GE =7V 8 V CE =V - C C I F (A) C - C 9 V GE (V) Figure : Transfer Characteristic.... V F (V) Figure : Diode Characteristic I C =A. A V CE(sat) (V) I C =A V F (V). A A I C =A. IF=A 7 Temperature ( C) Figure : Collector-Emitter Saturation Voltage vs. Junction Temperature 7 Temperature ( C) Figure : Diode Forward voltage vs. Junction Temperature Rev..: December 7 Page of 9
4 AOKBHAL V CE =V I C =A C ies V GE (V) 9 Capacitance (pf) C oes C res 8 Q g (nc) Figure 7: Gate-Charge Characteristics 8 V CE (V) Figure 8: Capacitance Characteristic Power Disspation(W) 7 T CASE ( C) Figure : Power Disspation as a Function of Case E- E- Current rating 9 I CE(S) (A) E- E- E- V CE =V V CE =V E-7 7 T CASE ( C) Figure : Current De-rating E-8 7 Temperature ( C) Figure : Diode Reverse Leakage Current vs. Junction Temperature Rev..: December 7 Page of 9
5 AOKBHAL Switching Time (ns) Td(off) Tf Td(on) Tr Switching Time (ns) Td(off) Tf Td(on) Tr 7 9 Figure : Switching Time vs. I C (T j = C, V GE =V, V CE =V, R g =Ω) R g (Ω) Figure : Switching Time vs. R g (T j = C, V GE =V, V CE =V, I C =A) Switching Time (ns) Td(off) Tf Td(on) Tr V GE(TH) (V) 7 7 T J ( C) Figure : Switching Time vs.t j (V GE =V, V CE =V, I C =A, R g =Ω) 7 T J ( C) Figure : V GE(TH) vs. T j Rev..: December 7 Page of 9
6 AOKBHAL Eoff Eon 7 Eoff Eon SwitchIng Energy (mj) 8 Etotal Switching Energy (mj) Etotal 7 9 Figure 7: Switching Loss vs. I C (T j = C, V GE =V, V CE =V, R g =Ω) R g (Ω) Figure 8: Switching Loss vs. R g (T j = C, V GE =V, V CE =V, I C =A) 7 Eoff Eon 7 Eoff Eon Switching Energy (mj) Etotal Switching Energy (mj) Etotal 7 T J ( C) Figure 9: Switching Loss vs. T j (V GE =V, V CE =V, I C =A, R g =Ω) V CE (V) Figure : Switching Loss vs. V CE (T j = C, V GE =V, I C =A, R g =Ω) Rev..: October Page of 9
7 AOKBHAL C 8 C Q r (nc) 8 Q rr 8 I rm (A) T rr (ns) T rr C 8 S C I rm S I F (A) Figure : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =V, V CE =V, di/dt=a/µs) I F (A) Figure : Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =V, V CE =V, di/dt=a/µs) Q rr (nc) Q rr C I rm (A) T rr (ns) T rr C 8 S C 7 8 di/dt (A/µs) Figure : Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =V, V CE =V, I F =A) I rm C 7 8 di/dt (A/µs) Figure : Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =V, V CE =V, I F =A) S Rev..: December 7 Page 7 of 9
8 AOKBHAL Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =. C/W Single Pulse In descending order D=.,.,.,.,.,., single pulse P DM T on T. E- E-.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =. C/W Single Pulse In descending order D=.,.,.,.,.,., single pulse P DM T on T. E- E-.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for Diode Rev..: December 7 Page 8 of 9
9 AOKBHAL Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev..: December 7 Page 9 of 9
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