MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

Transcription

1 General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, High Power inverters, Motors drives and other applications where switching losses are significant portion of the total losses. MPMC1B1RH NPT & Rugged Type 1V IGBT Module Features BV CES= 1V Low Conduction Loss : V CE(sat) =.8V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 1us at =1 Isolation Type Package Applications Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS MPMC1B1RH NPT & Rugged Type 1V IGBT Module 7DM- E3193 Equivalent Circuit Absolute Maximum = 5 o C (Per Leg) Characteristics Symbol Rating Unit Collector-Emitter Voltage V CES 1 V Gate- Voltage V GES ± V Continuous Collector Current =5 o C I C 15 A =8 o C 1 A Pulsed Collector Current (1) I CM A Diode Continuous Forward Current =8 o C I F 1 A Diode Maximum Forward Current I FM A Power Dissipation =5 o C P D 9 W Short Circuit Withstand Time T SC 1 us Operating Junction Temperature Tj -55~15 Storage Temperature Range T stg -55~15 o C o C Isolation Voltage AC 1minute V iso 5 V Mounting screw Torque : M - N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature March 13.Version 3. 1

2 Electrical Characteristics of =5 o C(unless otherwise specified) Static Characteristics Characteristics Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage BV CES I C = 1mA, V GE = V Gate Threshold Voltage V GE(th) V CE = V GE, I C = ma Collector Cut-Off Current I CES V CE = 1V, V GE = V ma Gate Leakage Current I GES V GE = ±V, V CE = V - - ±5 na Collector-Emitter saturation voltage Dynamic Characteristics Total Gate Charge V CE(sat) Q g V GE = 15V, I C=1A V = V - - V CC = V, I C = 1A, Gate-Emitter Charge Q ge - - V GE = ±15V Gate-Collector Charge Q gc Input Capacitance C ies V CE = 3V, V GE = V, Output Capacitance C oes f = 1.MHz Reverse Transfer Capacitance C res V nc pf MPMC1B1RH NPT & Rugged Type 1V IGBT Module Turn-On Delay Time t d(on) Rise Time t r - - Turn-Off Delay Time t V CC = V, I C =1A, d(off) ns Fall Time t f V GE =±15V, Turn on Switching Loss E on R G = 1Ω, Inductive Load mj Turn off Switching Loss E off -. - mj Total Switching Loss E ts mj Short Circuit Withstand Time T sc V cc = V, V GE = ±15V R G = 1 Tc = us Electrical Characteristics of =5 o C(unless otherwise specified) Diode Forward Voltage V FM I F=1A = V Diode Reverse Recovery Time t rr =1 ns Diode Peak Reverse Recovery Current I rr I F =1A, V R=V, di/dt = -A/us = A Diode Reverse Recovery Charge Q rr = nc March 13.Version 3.

3 Thermal Characteristics and Weight Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) R θjc /W Junction-to-Case(DIODE Part) R θjc /W Case-to-Sink ( Conductive grease applied) R θcs /W Weight of Module Weight g MPMC1B1RH NPT & Rugged Type 1V IGBT Module March 13.Version 3. 3

4 Eon[mJ] Eoff[mJ] Collector Current,I C Gate-Emitter Voltage, V GE Collector Current, I C Collector Current,I C Common Emitter V 15V 1V 1V Collector-Emitter Voltage, V CE 8V Fig.1 Typical Output Characteristics = Common Emitter =15 V 15V 1V 1V V Collector - Emitter Voltage,V CE Fig. Typical Output Characteristics V CE =V,I C =1A MPMC1B1RH NPT & Rugged Type 1V IGBT Module Collector-Emitter Voltage,V CE Gate Charge, Qg[nC] Fig.3 Typical Saturation Voltage Characteristics Fig. Gate Charge Characteristics 1 1 Eon( ) Eon( =15 ) 1 1 Eoff( ) Eoff( =15 ) R G [Ω ] R G [Ω ] Fig.5 Typical turn-on energy = f(r G ) V GE = ±15V, IC = 1A, V CE = V Fig. Typical turn-off energy = f(r G ) V GE = ±15V, IC = 1A, V CE = V March 13.Version 3.

5 Thermal Response Zthjc[ /W] Forward Current, I F Collector Current,I C Power Dissipation[W] E-3 Fig.7 Rated Current vs. Case Temperature FRD IGBT Case Temperatute, Tc[ ] T J = 15 V GE 15V Fig.8 Power Dissipation vs. Case Temperature =15 [ ] T J 15 P D =f( ) MPMC1B1RH NPT & Rugged Type 1V IGBT Module 1E- 1E-5 1E- 1E Rectangular Pulse Duration Time[sec] Forward Drop Voltage, V F Fig.9 Transient Thermal Impedance Fig.1 Forward Characteristics March 13.Version 3. 5

6 Package Dimension 7DM- Dimensions are in millimeters, unless otherwise specified MPMC1B1RH NPT & Rugged Type 1V IGBT Module March 13.Version 3.

7 MPMC1B1RH NPT & Rugged Type 1V IGBT Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. March 13.Version 3. 7