MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
|
|
- Phillip Brett Long
- 5 years ago
- Views:
Transcription
1 General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2 nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential TO-247 Maximum Rating G C E Parameter Symbol Rating Unit Collector-emitter voltage V CE 650 V DC collector current, limited by T vjmax T C=25 C I C 100 A T C=100 C 60 A Pulsed collector current, t p limited by T vjmax I Cp 180 A Turn off safe operating area V CE 650V, T vj 175 C A Diode forward current limited by T vjmax T C=25 C I F 60 T C=100 C 30 Diode pulsed current, t p limited by T vjmax I Fp 200 A Gate-emitter voltage V GE ±20 V Power dissipation Short circuit withstand time V CC 400V, R G = 7Ω, V GE = 15V, T vj = 150 C T C=25 C MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Features High Speed Switching & Low Power Loss V CE(sat) = I C = 60A E off = T C = 25 C High Input Impedance t rr = 110ns F/dt = 500A/ μs Maximum Junction Temperature 175 C Applications PFC UPS PV Inverter P D Welder IH Cooker A 428 W T C=100 C 214 W tsc 5 μs Operating Junction temperature range T vj -40~175 C Storage temperature range T stg -55~150 C Soldering temperature Wave soldering 1.6 mm (0.063 in.) from case for 10s 260 C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Thermal Characteristic Parameter Symbol Rating Unit Thermal resistance junction-to-ambient R θja 40 Thermal resistance junction-to-case for IGBT R θjc 0.35 C/W Thermal resistance junction-to-case for Diode R θjc 1.2 1
2 Ordering Information Part Number Marking Temp. Range Package Packing RoHS Status MBQ60T65PESTH 60T65PES -55~175 C TO-247 Tube Halogen Free Electrical Characteristic (T vj = 25 C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Static Characteristic Collector-emitter breakdown voltage BV CES I C = 2mA, V GE = 0V V Collector-emitter saturation voltage V CE(sat) I C = 60A, V GE =15V Diode forward voltage V F V GE = 0V, I F = 25A T vj = 25 C T vj = 175 C T vj = 25 C T vj = 175 C Gate-emitter threshold voltage V GE(th) V CE = V GE, I C = 0.5mA V Zero gate voltage collector current I CES V CE = 650V, V GE = 0V, T vj = 25 C μa Gate-emitter leakage current I GES V GE = 20V, V CE = 0V - - ±100 na Dynamic Characteristic Total gate charge Q g V CE = 520V, I C = 60A, Gate-emitter charge Q ge V GE = 15V Gate-collector charge Q gc Input capacitance C ies V CE = 25V, V GE = 0V, Reverse transfer capacitance C res f = 1MHz pf Output capacitance C oes Internal emitter inductance measured 5mm (0.197 in.) from case L E nh Switching Characteristic Turn-on delay time t d(on) Rise time t r Turn-off delay time t d(off) V GE = 15V, V CC = 400V, Fall time t f I C = 60A, R G = 7Ω, Turn-on switching energy E on Inductive Load, T vj = 25 C Turn-off switching energy E off Total switching energy E ts Turn-on delay time t d(on) Rise time t r Turn-off delay time t d(off) V GE = 15V, V CC = 400V, Fall time t f I C = 60A, R G = 7Ω, Turn-on switching energy E on Inductive Load, T vj = 175 C Turn-off switching energy E off Total switching energy E ts Reverse recovery time t rr ns I F = 25A, di F/dt = 500A/ μs, Reverse recovery current I rr A T vj = 25 C Reverse recovery charge Q rr μc Reverse recovery time t rr ns I F = 25A, di F/dt = 500A/ μs, Reverse recovery current I rr A T vj = 175 C Reverse recovery charge Q rr μc V V nc ns mj ns mj MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation 2
3 3
4 4
5 5
6 6
7 L L1 D E2 D1 S Q Physical Dimension TO-247 Dimensions are in millimeters, unless otherwise specified E e A A2 b2 b1 b E1 c A1 ΦP MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation Dimension Min(mm) Max(mm) A A A b b b c D D E E E e 5.45BSC L L ΦP Q S 6.15BSC 7
8 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 8
Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationMPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationMMQ60R190P 600V 0.19Ω N-channel MOSFET
MMQ60R190P 600V 0.19Ω N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationMPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationMPMD200B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationMDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω
MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω
MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationMPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationMDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ
General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationMDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω
MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance
More informationMDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable
More informationCharacteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.
General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable
More informationMDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,
More informationMMIS70H900Q 700V 1.4Ω N-channel MOSFET
MMIS70H900Q 700V 1.4Ω N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationCharacteristics Symbol Rating Unit
General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationMDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ
MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high
More informationMDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω
MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationMDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω
MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationCharacteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.
General Description MDU1512 Single N-channel Trench MOSFET 3V, 1.A, 3.4mΩ The MDU1512 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationMDV1548 Single N-Channel Trench MOSFET 30V
General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable
More informationCharacteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.
General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable
More informationMMD65R900Q 650V 0.90Ω N-channel MOSFET
MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationMDV1545 Single N-Channel Trench MOSFET 30V
General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable
More informationCharacteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1.
ㅊ General Description MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)
General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device
More informationMDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ
General Description MDP15N75 Single N-channel Trench MOSFET 15V, 1A, 7.5mΩ The MDP15N75 uses advanced MagnaChip s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationMDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
MDU1511 Single N-Channel Trench MOSFET 3V ㅊ MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ General Description Features The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationMMD50R380P 500V 0.38Ω N-channel MOSFET
MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 600V, SMPS N-CHANNEL IGBT DESCRIPTION The UTC is a N-channel IGBT. it uses UTC s advanced technology to provide customers with high input impedance, high switching speed
More informationRGTV00TS65D 650V 50A Field Stop Trench IGBT
RGTVTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).5V P D 276W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed
More informationMDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω
MDQ18N5 N-Channel MOFET 5V MDQ18N5 N-Channel MOFET 5V, 2.A,.27Ω. eneral Description These N-channel MOFET are produced using advanced MagnaChip s MOFET Technology, which provides low onstate resistance,
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More informationRGT00TS65D 650V 50A Field Stop Trench IGBT
RGTTS65D 65V 5A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V 277W P D ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching
More informationRGT30NS65D 650V 15A Field Stop Trench IGBT
RGT3NS6D 6V A Field Stop Trench IGBT Outline V CES 6V LPDS / TO-262 I C( C) A V CE(sat) (Typ.).6V P D 33W () (3) (2) () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low
More informationRGS00TS65D 650V 50A Field Stop Trench IGBT
RGSTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 326W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit
More informationRGTH60TS65D 650V 30A Field Stop Trench IGBT
RGTH6TS65D 65V 3A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 3A V CE(sat) (Typ.).6V P D 94W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High
More informationRGT00TS65D 650V 50A Field Stop Trench IGBT
65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 277W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3)
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High
More informationRGT8BM65D 650V 4A Field Stop Trench IGBT
5V A Field Stop Trench IGBT Datasheet Outline V CES 5V TO-5 I C( C) A V CE(sat) (Typ.).5V P D W () (3) () Features Inner Circuit ) Low Collector - Emitter Saturation Voltage ) Low Switching Loss 3) Short
More informationRGW00TK65 650V 50A Field Stop Trench IGBT
RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)
More informationRGTVX6TS65 650V 80A Field Stop Trench IGBT
65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss
More informationRGCL80TK60D Data Sheet
6V A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 2A V CE(sat) (Typ.).4V@I C =A P D 57W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Soft Switching 3)
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationAOKS40B65H1/AOTS40B65H1
AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching
More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationFGL60N100BNTD 1000 V, 60 A NPT Trench IGBT
FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 V @ = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationRGCL60TK60 Data Sheet
RGCL6TK6 6V 3A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 8A V CE(sat) (Typ.).4V@I C =3A P D 54W () (2) (3) Features ) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb -
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
More informationRGTH80TS65 650V 40A Field Stop Trench IGBT
65V A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) A V CE(sat) (Typ.).6V P D 234W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching
More informationAOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationSTGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.
AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode
More informationSymbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationSTGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
More informationFGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationMDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω
General Description The MDF8N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF8N5 is suitable device for SMPS,
More informationMDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω
General Description The MDF12N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF12N5 is suitable device for SMPS,
More informationMDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω
General Description The MDF9N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N6 is suitable device for SMPS,
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures V DS = 500V I D = 5.0A R DS(ON) 1.4Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D
General Description The MDP/F5N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N5B is suitable device for
More informationFeatures V DS = 500V I D = 9.0A R DS(ON) 0.85Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D
General Description The MDP/F9N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F9N5B is suitable device for
More informationMDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω
General Description The MDP13N5 uses advanced Magnachip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N5 is suitable device for SMPS,
More informationMDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω
General Description The MDD/INB uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD/INB is suitable device for SMPS,
More informationMDP13N50B / MDF13N50B
General Description The MDP/F13N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F13N5B is suitable device for
More informationMDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDD4N60/MDI4N60 N-Channel MOSFET 600V, 3.5A, 2.0Ω
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationV CE = 600 V, I C = 37 A Trench IGBT with Fast Recovery Diode. Description. Package. Features. Applications
V CE = 6 V, I C = 37 A Trench IGBT with Fast Recovery Diode Data Sheet Description The is 6 V trench IGBT. Sanken original trench structure decreases gate capacitance, and achieves high speed switching
More informationMDI6N60 N-Channel MOSFET 600V, 4.5A, 1.4Ω
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationSTGW15H120DF2, STGWA15H120DF2
STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationUltra Fast NPT - IGBT
APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers
More informationSKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
More informationIGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationMDD1752. MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ. Features. General Description. Applications
General Description The MDD1752 uses advanced MagnaChip s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low, low gate charge can be offering
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More information