V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
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1 AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations.the soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. Product Summary V CE I C (T C = C) 6V A V CE(sat) (T C =5 C).85V Top View TO-7 C AOKB6D G C E Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol AOKB6D Collector-Emitter Voltage 6 Gate-Emitter Voltage V GE Spike Continuous Collector Current T C =5 C T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE 6V, Limited by T Jmax Continuous Diode T C =5 C Forward Current T C = C Diode Pulsed Current, Limited by T Jmax Power Dissipation V CE V GE V SPIKE I C I CM I LM I F I FM t SC Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG -55 to 75 C purpose, /8" from case for 5 seconds Thermal Characteristics T L C Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Symbol R θ JA R θ JC AOKB6D.9 Units C/W C/W Maximum Diode Junction-to-Case.7 C/W R θ JC G E ± V 5ns V Short circuit withstanding time V GE = 5V, V CE V, Delay between short circuits.s, T C =5 C T C =5 C T C = C P D 7 7 A 7 µs 67 8 Units V A A A A W Rev.6.: May Page of 9
2 AOKB6D Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J =5 C V V CE(sat) V F T J =5 C T J =5 C -. - T J =75 C T J =5 C T J =5 C -. - T J =75 C V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =ma V I CES T J =5 C - - T J =5 C - - T J =75 C - - I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS C ies C oes C res Q g Q ge Q gc Gate to Collector Charge Short circuit collector current, Max. I C(SC) short circuits, Delay between V GE =5V, V CE =V, R G =5Ω short circuits.s R g Gate resistance f=mhz SWITCHING PARAMETERS, (Load Inductive, T J =5 C) t D(on) t r Collector-Emitter Saturation Voltage Forward Transconductance DYNAMIC PARAMETERS Input Capacitance t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Diode Forward Voltage Zero Gate Voltage Collector Current Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge V GE =5V, V CE =8V, I C =A Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy V GE =5V, I C =A V GE =V, I C =A V CE =6V, V GE =V V CE =V, I C =A V GE =V, V CE =5V, f=mhz T J =5 C V GE =5V, V CE =V, I C =A, R G =5Ω, Parasitic Ιnductance=5nH Diode Reverse Recovery Time T J =5 C Q rr Diode Reverse Recovery Charge I F =A,dI/dt=A/µs,V CE =V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, T J =75 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current T J =75 C V GE =5V, V CE =V, I C =A, R G =5Ω, Parasitic Inductance=5nH T J =75 C I F =A,dI/dt=A/µs,V CE =V V V µa S pf pf pf nc nc nc A Ω - - ns ns ns ns mj mj mj ns -. - µc A ns ns ns - - ns mj mj -. - mj ns µc A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.: May Page of 9
3 AOKB6D 8 6 V 7V 5V V V 7V 5V V V GE = 7V V 9V V 9V V GE =7V V CE (V) Fig : Output Characteristic (T j =5 C ) V CE (V) Fig : Output Characteristic (T j =75 C ) V CE =V - C 5 C 75 C I F (A) 5 - C 5 C 75 C 7 6 V GE (V) Fig : Transfer Characteristic V F (V) Fig : Diode Characteristic 5 8 I C =A 7 V CE(sat) (V) I C =A V GE(TH) (V) 6 5 I C =A Temperature ( C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature T J ( C) Figure 6: V GE(TH) vs. T j Rev.6.: May Page of 9
4 AOKB6D 5 V CE =8V I C =A C ies V GE (V) 9 6 Capacitance (pf) C oes C res Q g (nc) Fig 7: Gate-Charge Characteristics V CE (V) Fig 8: Capacitance Characteristic 8 5 Power Disspation(W) T CASE ( C) Fig : Power Disspation as a Function of Case 5 Current rating T CASE ( C) Fig : Current De-rating Rev.6.: May Page of 9
5 AOKB6D Switching Time (ns) Td(off) Tf Td(on) Tr Switching Time (ns) Td(off) Tf Td(on) Tr R g (Ω) Figure : Switching Time vs. I C (T j =75 C,V GE =5V,V CE =V,R g =5Ω) Figure : Switching Time vs. R g (T j =75 C,V GE =5V,V CE =V,I C =A) Td(off) Tf Td(on) Tr Switching Time (ns) 5 5 T J ( C) Figure : Switching Time vs.t j ( V GE =5V,V CE =V,I C =A,R g =5Ω) Rev.6.: May Page 5 of 9
6 AOKB6D Eoff Eoff SwitchIng Energy (mj) Eon Etotal Switching Energy (mj) Eon Etotal R g (Ω) Figure 5: Switching Loss vs. I C (T j =75 C,V GE =5V,V CE =V,R g =5Ω) Figure 6: Switching Loss vs. R g (T j =75 C,V GE =5V,V CE =V,I C =A) Switching Energy (mj).5.5 Eoff Eon Etotal Switching Energ y (mj) Eoff Eon Etotal 5 5 T J ( C) Figure 7: Switching Loss vs. T j (V GE =5V,V CE =V,I C =A,R g =5Ω) V CE (V) Figure 8: Switching Loss vs. V CE (T j =75 C,V GE =5V,I C =A,R g =5Ω) Rev.6.: May Page 6 of 9
7 AOKB6D.E- I CE(S) (A).E-.E-5.E-6.E-7.E-8 V CE =6V V CE =V V SD (V) A A 5A IF=A V.E Temperature ( C ) Fig 9: Diode Reverse Leakage Current vs. Junction Temperature 5 5 Temperature ( C ) Fig : Diode Forward voltage vs. Junction Temperature 7 5 Q rr (nc) C Q rr 6 5 I rm (A) T rr (ns) 5 75 C 5 C T rr 8 6 S 5 C 75 C 5 C I rm I F (A) Fig : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =5V,V CE =V, di/dt=a/µs) 5 75 C 5 C I S (A) Fig : Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =5V,V CE =V, di/dt=a/µs) S C C 8 Q rr (nc) 8 6 Q rr I rm (A) T rr (ns) 5 T rr 6 S 5 C 75 C 5 C di/dt (A/µS) Fig : Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =5V,V CE =V,I F =A) I rm 5 75 C 5 C 5 C S di/dt (A/µS) Fig : Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =5V,V CE =V,I F =A) Rev.6.: May Page 7 of 9
8 AOKB6D Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.9 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P D T on T. E-6 E Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.7 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P D T on T. E Pulse Width (s) Figure 6: Normalized Maximum Transient Thermal Impedance for Diode Rev.6.: May Page 8 of 9
9 AOKB6D Rev.6.: May Page 9 of 9
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