Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

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1 Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features Short circuit rated = C, = 5V High speed switching Low saturation voltage : V CE(sat) = 2.2 = 5A High input impedance CO-PAK, IGBT with FRD : t rr = 5ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G G C E TO-264 E Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Description Units V CES Collector-Emitter Voltage V S Gate-Emitter Voltage ± V Collector T = 25 C 8 A C Collector = C 5 A M () Pulsed Collector Current 5 A I F Diode Continuous Forward = C 3 A I FM Diode Maximum Forward Current 9 A T SC Short Circuit Withstand = C us P D Maximum Power = 25 C 25 W Maximum Power = C W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 Seconds 3 C Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case --.5 C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case --. C/W R θja Thermal Resistance, Junction-to-Ambient C/W Rev. A

2 Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 25uA V B VCES / Temperature Coefficient of Breakdown T J Voltage = V, = ma V/ C ES Collector Cut-Off Current V CE = V CES, = V ua I GES G-E Leakage Current = S, V CE = V ± na On Characteristics (th) G-E Threshold Voltage Ic = 5mA, V CE = V Collector to Emitter I V C = 5A, = 5V V CE(sat) Saturation Voltage = 8A, = 5V V Dynamic Characteristics C ies Input Capacitance pf V CE =3V, = V, C oes Output Capacitance pf f = MHz C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V, = 5A, ns t f Fall Time R G = 5.9Ω, = 5V, -- 8 ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V, = 5A, ns t f Fall Time R G = 5.9Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj T sc Short Circuit Withstand Time = 3 V, = = C us Q g Total Gate Charge nc V CE = 3 V, = 5A, Q ge Gate-Emitter Charge nc = 5V Q gc Gate-Collector Charge -- 7 nc L e Internal Emitter Inductance Measured 5mm from PKG nh Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = 3A = 25 C = C V t rr Diode Reverse Recovery Time = 25 C -- 7 = C ns I rr Q rr Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge I F = 3A, di/dt = A/us = 25 C = C = 25 C -- 3 = C A nc Rev. A

3 8 V 5V 2V = V 8 = 5V Collector - Emitter Voltage, V CE Collector - Emitter Voltage, V CE Fig. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Collector - Emitter Voltage, V CE = 5V A 5A = 3A Load Current 5 3 Duty cycle : 5% = Power Dissipation = 7W = 3V Load Current : peak of square wave Case Temperature, [ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency = 25 Collector - Emitter Voltage, V CE = 3A 5A A Collector - Emitter Voltage, V CE = 3A 5A A Gate - Emitter Voltage, Gate - Emitter Voltage, Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. Rev. A

4 Capacitance [pf] Cies Coes Cres = V, f = MHz = 3V, = ± 5V = 5A Ton Tr Collector - Emitter Voltage, V CE Gate Resistance, R G [Ω] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance = 3V, = ± 5V = 5A Switching Loss [uj] = 3V, = ± 5V = 5A Eon Gate Resistance, R G [Ω] Gate Resistance, R G [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig. Switching Loss vs. Gate Resistance = ± 5V, R G = 5.9Ω Ton Tr 8 C 8 C = ± 5V, R G = 5.9Ω Fig. Turn-On Characteristics vs. Collector Current Fig 2. Turn-Off Characteristics vs. Collector Current Rev. A

5 Switching Loss [uj] = ± 5V, R G = 5.9Ω Eon Gate - Emitter Voltage, [ V ] R L = 6Ω = V 3 V V 8 C Gate Charge, Q g [ nc ] Fig 3. Switching Loss vs. Collector Current Fig 4. Gate Charge Characteristics 5 MAX. (Pulsed) MAX. (Continuous) Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature DC Operation..3 ms 5us us Safe Operating Area = V, = Collector-Emitter Voltage, V CE Collector-Emitter Voltage, V CE Fig 5. SOA Characteristics Fig 6. Turn-Off SOA Characteristics Thermal Response, Zthjc [ /W].. E single pulse Rectangular Pulse Duration [sec] Pdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + Fig 7. Transient Thermal Impedance of IGBT Rev. A

6 Forward Current, I F = Reverse Recovery Current, I rr V R = V I F = 3A = Forward Voltage Drop, V FM di/dt [A/us] Fig 8. Forward Characteristics Fig 9. Reverse Recovery Current Stored Recovery Charge, Q rr [nc] 8 V R = V I F = 3A = Reverce Recovery Time, t rr [ns] 8 8 V R = V I F = 3A = di/dt [A/us] di/dt [A/us] Fig. Stored Charge Fig 2. Reverse Recovery Time Rev. A

7 Package Dimension. ±. (8.3) (8.3) TO-264 (.) (4.) 6. ±. (2.) (9.).5 ±. (R2.) (R.) (7.) ø3.3 ±. (7.) (.5). ±. 4.9 ±. (.5) (.5) 2.5 ±. 3. ± ±.5 (.5) 5.45TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] ±.3 5. ±. 3.5 ±. (.5) (.5) (2.8) (2.) 2.5 ±. (9.) (.) Dimensions in Millimeters Rev. A