AOK20B65M1/AOT20B65M1/AOB20B65M1

Transcription

1 OKB65M/OTB65M/OBB65M 65V, lpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest lpha IGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low V CE(sat) enables high efficiencies Low turn-off switching loss and softness Very good EMI behavior High short-circuit ruggedness Product Summary V CE I C (T C = C) 65V V CE(sat) (T J =).7V pplications Motor Drives Sewing Machines Home ppliances Fan, Pumps, Vacuum Cleaner Other Hard Switching pplications TO-47 TO- TO-6 D PK C C OKB65M E G C OTB65M G C E G OBB65M E G E Orderable Part Number Package Type Form Minimum Order Quantity OKB65M TO47 Tube 4 OTB65M TO Tube OBB65M TO6 Tape & Reel 8 bsolute Maximum Ratings T = unless otherwise noted Parameter Symbol OKB65M/OT(B)B65M Units Collector-Emitter Voltage 65 V Gate-Emitter Voltage Continuous Collector Current Diode Pulsed Current, Limited by T Jmax Short circuit withstanding time ) V GE =5V, V CC 4V, T J 75 C Power Dissipation T C = T C = C Pulsed Collector Current, Limited by T Jmax Turn off SO, V CE 65V, Limited by T Jmax Continuous Diode T C = Forward Current T C = C T C = T C = C V CE V GE I C I CM I LM I FM t SC P D 5 µs Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for 5 seconds T J, T STG T L -55 to 75 Thermal Characteristics Parameter Maximum Junction-to-mbient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Symbol R θ J R θ JC R θ JC OKB65M 4 OT(B)B65M ) llowed number of short circuits: <; time between short circuits: >s. ± I F V W C C Units C/W C/W C/W Rev..: May 6 Page of 9

2 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STTIC PRMETERS BV CES Collector-Emitter Breakdown Voltage I C =m, V GE =V, T J = V V CE(sat) V F T J = T J = -. - T J =75 C -. - T J = T J = T J =75 C V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =m V I CES T J = - - T J = T J =75 C I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± n g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) t r t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Collector-Emitter Saturation Voltage Diode Forward Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNMIC PRMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge V GE =5V, I C = V GE =V, I F = V CE =65V, V GE =V V CE =V, I C = V GE =V, V CC =5V, f=mhz Gate to Emitter Charge V GE =5V, V CC =5V, I C = Gate to Collector Charge Short circuit collector current Gate resistance SWITCHING PRMETERS, (Load Inductive, T J =) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy V GE =5V, V CC =4V, t sc 5us, T J 75 C V GE =V, V CC =V, f=mhz Diode Reverse Recovery Time T J = Q rr Diode Reverse Recovery Charge I F =, di/dt=/µs, V CC =4V I rm Diode Peak Reverse Recovery Current SWITCHING PRMETERS, (Load Inductive, T J =75 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current T J = V GE =5V, V CC =4V, I C =, R G =5Ω T J =75 C V GE =5V, V CC =4V, I C =, R G =5Ω T J =75 C I F =, di/dt=/µs, V CC =4V V V µ S - - pf pf pf nc - - nc - - nc Ω ns ns - - ns - - ns mj mj mj - - ns µc ns ns ns ns mj mj -. - mj ns µc PPLICTIONS OR USE S CRITICL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS RE NOT UTHORIZED. OS DOES NOT SSUME NY LIBILITY RISING OUT OF SUCH PPLICTIONS OR USES OF ITS PRODUCTS. OS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS ND RELIBILITY WITHOUT NOTICE. Rev..: May 6 Page of 9

3 TYPICL ELECTRICL ND THERML CHRCTERISTICS V 7V 5V V V 9V V GE = 7V V 5V 7V V V 9V V GE =7V V CE (V) Figure : Output Characteristic (T j =) V CE (V) Figure : Output Characteristic (T j =75 C) V CE =V 5-4 C 75 C I F () 4 75 C -4 C V GE (V) Figure : Transfer Characteristic V F (V) Figure 4: Diode Characteristic 5 V CE(sat) (V) 4 I C =4 I C = V F (V) I C =.5 IF= Temperature ( C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Temperature ( C) Figure 6: Diode Forward voltage vs. Junction Temperature Rev..: May 6 Page of 9

4 TYPICL ELECTRICL ND THERML CHRCTERISTICS 5 V CE =5V I C = C ies V GE (V) 9 6 Capacitance (pf) C oes C res 4 5 Q g (nc) Figure 7: Gate-Charge Characteristics V CE (V) Figure 8: Capacitance Characteristic 4 Power Disspation(W) T CSE ( C) Figure : Power Disspation as a Function of Case 5 E- 4 E- Current rating I CE(S) () E-4 E-5 E-6 V CE =65V V CE =5V E T CSE ( C) Figure : Current De-rating E Temperature ( C) Figure : Diode Reverse Leakage Current vs. Junction Temperature Rev..: May 6 Page 4 of 9

5 TYPICL ELECTRICL ND THERML CHRCTERISTICS Switching Time (ns) Td(off) Tf Td(on) Tr Switching Time (ns) Td(off) Tf Td(on) Tr Figure : Switching Time vs. I C (T j =75 C, V GE =5V, V CE =4V, R g =5Ω) R g (Ω) Figure 4: Switching Time vs. R g (T j =75 C, V GE =5V, V CE =4V, I C =) Switching Time (ns) Td(off) Tf Td(on) Tr V GE(TH) (V) T J ( C) Figure 5: Switching Time vs.t j (V GE =5V, V CE =4V, I C =, R g =5Ω) T J ( C) Figure 6: V GE(TH) vs. T j Rev..: May 6 Page 5 of 9

6 TYPICL ELECTRICL ND THERML CHRCTERISTICS Eoff Eoff SwitchIng Energy (mj).5.5 Eon Etotal Switching Energy (mj).5.5 Eon Etotal Figure 7: Switching Loss vs. I C (T j =75 C, V GE =5V, V CE =4V, R g =5Ω) R g (Ω) Figure 8: Switching Loss vs. R g (T j =75 C, V GE =5V, V CE =4V, I C =).5 Eoff.5 Eoff Switching Energy (mj) Eon Etotal Switching Energy (mj) Eon Etotal T J ( C) Figure 9: Switching Loss vs. T j (V GE =5V, V CE =4V, I C =, R g =5Ω) V CE (V) Figure : Switching Loss vs. V CE (T j =75 C, V GE =5V, I C =, R g =5Ω) Rev..: May 6 Page 6 of 9

7 TYPICL ELECTRICL ND THERML CHRCTERISTICS C C 5 Q rr (nc) 5 5 Q rr 75 C I F () Figure : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =5V, V CE =4V, di/dt=/µs) I rm I rm () T rr (ns) 6 4 T rr 75 C I F () Figure : Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =5V, V CE =4V, di/dt=/µs) S 5 5 S 4 6 Q rr (nc) Q rr 75 C 75 C di/dt (/µs) Figure : Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =5V, V CE =4V, I F =) I rm I rm () T rr (ns) T rr 75 C 75 C di/dt (/µs) Figure 4: Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =5V, V CE =4V, I F =) S S Rev..: May 6 Page 7 of 9

8 TYPICL ELECTRICL ND THERML CHRCTERISTICS Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.66 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P DM T on T. E-6 E Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P DM T on T. E Pulse Width (s) Figure 6: Normalized Maximum Transient Thermal Impedance for Diode Rev..: May 6 Page 8 of 9

9 Figure : Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev..: May 6 Page 9 of 9