AOC V Common-Drain Dual N-Channel MOSFET
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- Vivian Carroll
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1 OC878 Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET technology Low R SS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Product Summary SS R SS(ON) (at GS =.) R SS(ON) (at GS =.) R SS(ON) (at GS =.8) R SS(ON) (at GS =.) R SS(ON) (at GS =.) < mω <.mω <.mω <.7mΩ <.mω pplications Typical ESD protection HBM Class Battery protection switch Mobile device battery charging and discharging lphadfn.x.77_ Top iew Bottom iew Pin Pin Orderable Part Number Package Type Form Minimum Order Quantity OC878 lphadfn.x.77_ Tape & Reel bsolute Maximum Ratings T = C unless otherwise noted Parameter Source-Source oltage Gate-Source oltage Source Current(DC) Note Source Current(Pulse) Note T = C Symbol Power Dissipation Note T = C. Junction and Storage Temperature Range T J, T STG - to SS GS I S I SM P D Rating ±8 Units W C Thermal Characteristics Parameter Symbol Maximum Junction-to-mbient t s R qj Maximum Junction-to-mbient Steady-State Note. I s rated value is based on bare silicon.mounted on 7mmx7mm FR- board. Note. PW < μs pulses, duty cycle % max. Typical Units C/W C/W Rev..: October 7 Page of
2 OC878 Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STTIC PRMETERS B SSS Source-Source Breakdown oltage I S =m, GS = Test Circuit 6 I SSS Zero Gate oltage Source Current SS =, GS = Test Circuit T J = C μ I GSS Gate leakage current SS =, GS =±8 Test Circuit ± μ GS(th) Gate Threshold oltage SS = GS, I S =m Test Circuit..7. GS =., Test Circuit..6. T J = C...7 mω R SS(ON) Static Source to Source On-Resistance GS =., Test Circuit..7. mω GS =.8, Test Circuit..7. mω GS =., Test Circuit..9.7 mω GS =., Test Circuit.6.. mω g FS Forward Transconductance SS =, Test Circuit S FSS Forward Source to Source oltage I S =, GS = Test Circuit. DYNMIC PRMETERS R g Gate resistance f=mhz. KΩ SWITCHING PRMETERS Q g Total Gate Charge =., SS =6, 6 nc t D(on) Turn-On DelayTime. μs t =., SS =6, R L =.W, r Turn-On Rise Time. μs R GEN =W Test t D(off) Turn-Off DelayTime. μs Circuit8 t f Turn-Off Fall Time μs PPLICTIONS OR USE S CRITICL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS RE NOT UTHORIZED. OS DOES NOT SSUME NY LIBILITY RISING OUT OF SUCH PPLICTIONS OR USES OF ITS PRODUCTS. OS RESERES THE RIGHT TO IMPROE PRODUCT DESIGN, FUNCTIONS ND RELIBILITY WITHOUT NOTICE. Rev..: October 7 Page of
3 R SS(ON) (mw) R SS(ON) (mw) Normalized On-Resistance OC878 TYPICL ELECTRICL ND THERML CHRCTERISTICS. DS =..... C GS =. C.. SS (olts) Figure : On-Region Characteristics GS (olts) Figure : Transfer Characteristics.6. GS =. GS =. GS =.. GS =. GS =.8 GS =. GS =. GS = GS =. GS =. 7 7 Figure : On-Resistance vs. Source Current and Gate oltage Temperature ( C) Figure : On-Resistance vs. Junction Temperature 6.E+.E+ C.E- C.E-.E- C C GS (olts) Figure : On-Resistance vs. Gate-Source oltage.e-.e FSS (olts) Figure 6: Forward Source to Source Characteristics Rev..: October 7 Page of
4 Z qj Normalized Transient Thermal Resistance I S (mps) Power (W) GS (olts) OC878 TYPICL ELECTRICL ND THERML CHRCTERISTICS SS =6 6 7 Q g (nc) Figure 7: Gate-Charge Characteristics..... R SS(ON) limited T J(Max) = C T = C ms ms ms ms DC T J(Max) = C T = C... SS (olts) GS > or equal to. Figure 8: Maximum Forward Biased Safe Operating rea (Note)..... Pulse Width (s) Figure 9: Single Pulse Power Rating Junction-to- mbient (Note) D=T on /T T J,PK =T +P DM.Z qj.r qj In descending order D=.,.,.,.,.,., single pulse.. Single Pulse P D T. E-.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note) T on Rev..: October 7 Page of
5 OC878 TEST CIRCUIT Isss POSITIE SS FOR ISSS+ NEGTIE SS FOR ISSS- TEST CIRCUIT Igss, POSITIE GS FOR IGS+ NEGTIE GS FOR IGS- When FET is measured between GTE and SOURCE SS G TEST CIRCUIT gs(off) When FET is measured TEST CIRCUIT Rss(on) ss/is between GTE and SOURCE SS G G Is SS GS GS TEST CIRCUIT F(SS), TEST CIRCUIT 6 BDSS POSITIE SS FOR ISSS+. NEGTIE SS FOR ISSS- When FET measured FET GS=. IF Is GS= SS TEST CIRCUIT 7 BGSO, TEST CIRCUIT 8 POSITIE SS FOR ISSS+ Switching time NEGTIE SS FOR ISSS- out When FET is measured between GTE and SOURCE in IG Rev..: October 7 Page of
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dvanced Power MOSFET IRF630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 10 µ (Max.)
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6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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dvanced Power MOSFET SSW/IN60 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 25 µ (Max.)
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Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
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AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
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Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
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WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
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6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
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6 NChannel AlphaGT TM General escription Trench Power AlphaGT TM technology Low R (ON) Low Gate Charge E protected Product ummary 6 I (at G =) 3.5A R (ON) (at G =) < 9.8mΩ R (ON) (at G =4.5) < 3.5mΩ Typical
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