AONS V N-Channel MOSFET

Transcription

1 AONS3634 3V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =4.5V) 3V 85A < 2.9mΩ < 3.5mΩ Applications DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial See Note I % UIS Tested % Rg Tested Top View DFN5X6 Bottom View Top View D PIN PIN S S S G Orderable Part Number Package Type Form Minimum Order Quantity AONS3634 DFN 5x6 Tape & Reel D D D D G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Avalanche energy T A =25 C T A =7 C L=.mH C Symbol Continuous Drain T C =25 C 85 I D Current G T C = C 6 Pulsed Drain Current C 85 Continuous Drain Current Avalanche Current C Power Dissipation A T C =25 C Junction and Storage Temperature Range T J, T STG -55 to 5 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t s 5 R qja Maximum Junction-to-Ambient A D Steady-State 4 Maximum Junction-to-Case Steady-State R qjc 2.4 V DS V GS I DM 36.5 I DSM 29 I AS E AS T A =25 C 6.2 P DSM Maximum 3 Power Dissipation B T C = C 7 P D T A =7 C 4 ± Max Units V V A A A mj W W C Units C/W C/W C/W Rev..: August 28 Page of 6

2 AONS3634 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage ID=25μA, VGS=V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J =55 C 5 I GSS Gate-Body leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =25mA..5.9 V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =2A V GS =4.5V, I D =2A T J =25 C mω g FS Forward Transconductance V DS =5V, I D =2A S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum Body-Diode Continuous Current 5 A DYNAMIC PARAMETERS C iss Input Capacitance 89 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 395 pf C rss Reverse Transfer Capacitance 55 pf R g Gate resistance f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge nc Q g (4.5V) Total Gate Charge.5 8 nc V GS =V, V DS =5V, I D =2A Q gs Gate Source Charge 6 nc Q gd Gate Drain Charge 2.5 nc t D(on) Turn-On DelayTime 7.5 ns t r Turn-On Rise Time V GS =V, V DS =5V, R L =.75W, 3.5 ns t D(off) Turn-Off DelayTime R GEN =3W 3 ns t f Turn-Off Fall Time 4 ns t rr Body Diode Reverse Recovery Time I F =2A, di/dt=5a/ms 2 ns Q rr Body Diode Reverse Recovery Charge I F =2A, di/dt=5a/ms 2 nc A. The value of R qja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The Power dissipation P DSM is based on R qja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =5 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 ms pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. I. For application requiring slow >ms turn-on/turn-off, please consult AOS FAE for proper product selection. μa mω APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: August 28 Page 2 of 6

3 AONS3634 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 3.5V 3V 8 V DS =5V I D (A) 6 4 V 4.5V I D (A) C 2 4 V GS =2.5V V DS (Volts) Figure : On-Region Characteristics (Note E) C V GS (Volts) Figure 2: Transfer Characteristics (Note E) V GS =4.5V R DS(ON) (mw) 3 2 V GS =V Normalized On-Resistance V GS =V I D =2A V GS =4.5V I D =2A I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature (Note E) R DS(ON) (mw) C 25 C I D =2A I S (A).E+.E+.E-.E-2.E-3.E-4 25 C 25 C V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E).E V SD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev..: August 28 Page 3 of 6

4 AONS3634 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =2A 25 2 C iss V GS (Volts) 6 4 Capacitance (pf) C oss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics.. R DS(ON) limited ms ms 5 4 T J(Max) =5 C T C =25 C I D (Amps).. DC ms ms ms Power (W) 3 2. T J(Max) =5 C T C =25 C... V DS (Volts) V GS > or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z qjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T C +P DM.Z qjc.r qjc R qjc =3 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse T. E Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P DM T on Rev..: August 28 Page 4 of 6

5 AONS3634 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 3 2 Current rating I D (A) T CASE ( C) Figure 2: Power De-rating (Note F) T CASE ( C) Figure 3: Current De-rating (Note F) T A =25 C Power (W) E-5.. Pulse Width (s) Figure 4: Single Pulse Power Rating Junction-to-Ambient (Note H) Z qja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z qja.r qja R qja =5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse P DM T..... Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance (Note H) T on Rev..: August 28 Page 5 of 6

6 AONS3634 Figure Gate A: Charge Gate Charge Test Circuit Test Circuit & Waveform & Waveforms Qg VDC + - DUT VDC + - V Qgs Qgd Ig Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit & Waveforms Waveforms RL Charge Rg DUT VDC + - Vdd 9% % td(on) t r t d(off) t f t on t off Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV DSS Rg Id VDC + - Vdd Id I AR DUT Figure Diode D: Recovery Diode Recovery Test Circuit Test Circuit & Waveforms & Waveforms + DUT Q = - Idt rr - Ig Isd L VDC + - Vdd Isd I F di/dt I RM t rr Vdd Rev..: August 28 Page 6 of 6

7 This AOS product reliability report summarizes the qualification result for AONS3634. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AONS3634 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item Test Condition Time Point HTGB HTRB Precondition (Note A) HAST Temp = 5 C, =% of max Temp = 5 C, =% of max 68hr 85 C / 85%RH + 3 cycle reflow@26 C (MSL ) 3 C, 85%RH, 33.3 psia, = 8% of max H3TRB 85 C, 85%RH, = 8% of max hours 693 pcs JESD22-A Autoclave 2 C, 29.7psia, RH=% 96 hours 924 pcs JESD22-A2 Temperature -65 C to 5 C, Cycle air to air, cycles 924 pcs JESD22-A4 HTSL Temp = 5 C hours 693 pcs JESD22-A3 IOL Tj = C 5 cycles 693 pcs MIL-STD-75 Method 37 Note: The reliability data presents total of available generic data up to the published date. Note A: MSL (Moisture Sensitivity Level) based on J-STD-2 II. Reliability Evaluation FIT rate (per billion): 3.82 MTTF = 2999 years 68 / 5 / hours 68 / 5 / hours Total Sample Size Number of Failures Reference Standard 462 pcs JESD22-A8 462 pcs JESD22-A8-462 pcs JESD22-A3 96 hours 693 pcs JESD22-A The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi 2 x 9 / [2 (N) (H) (Af)] = 3.82 MTTF = 9 / FIT = 2999 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea =.7eV and Tuse = 55 C ) Acceleration Factor [Af] = Exp [Ea / k (/Tj u /Tj s)] Acceleration Factor ratio list: 55 deg C 7 deg C 85 deg C deg C 5 deg C 3 deg C 5 deg C Af Tj s = Stressed junction temperature in degree (Kelvin), K = C Tj u =The use junction temperature in degree (Kelvin), K = C k = Boltzmann s constant, X -5 ev / K

8 ALPHA & OMEGA SEMICONDUCTOR Document No. Version Title PD-34 A AONS3634 Marking Description DFN5x6 PACKAGE MARKING DESCRIPTION Green product NOTE: LOGO - AOS Logo Part number code F - Fab code A - Assembly location code Y - Year code W - Week code L&T - Assembly lot code PART NO. DESCRIPTION CODE AONS3634 Green product 3634

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