AOI472 N-Channel Enhancement Mode Field Effect Transistor
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- Derrick Ramsey
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1 N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product is Pb-free (meets ROHS & Sony 259 specifications). V DS (V) = 25V I D = (VGS = V) R DS(ON) <. mω (V GS = V) R DS(ON) <9.7 mω (VGS =.5V) UIS Tested 93 Rg,Ciss,Coss,Crss Tested IPK D G D S Top View Drain Connected to Tab G S bsolute Maximum Ratings T =25 C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 25 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C valanche Current C Power Dissipation B T C = C Repetitive avalanche energy L=.mH C T C = C Junction and Storage Temperature Range V DS V GS I DM I R E R T J, T STG ±2 I D to 75 Units V V mj W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-mbient t s 5 2 Maximum Junction-to-mbient R θj Steady-State Maximum Junction-to-Case B Steady-State R θjc 2. 3 lpha & Omega Semiconductor, Ltd.
2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STTIC PRMETERS BV DSS Drain-Source Breakdown Voltage I D =2u, V GS =V 25 V V DS =2V, V GS =V I DSS Zero Gate Voltage Drain Current µ T J =55 C 5 I GSS Gate-Body leakage current V DS =V, V GS =±2V n V GS(th) Gate Threshold Voltage V DS =V GS, I D =2µ 2.5 V I D(ON) On state drain current V GS =V, V DS =5V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =3 V GS =.5V, I D =2 T J =25 C g FS Forward Transconductance V DS =5V, I D =2 9 S V SD Diode Forward Voltage I S =, V GS =V.7 V I S Maximum Body-Diode Continuous Current DYNMIC PRMETERS C iss Input Capacitance 2 2 pf C oss Output Capacitance V GS =V, V DS =2.5V, f=mhz 5 pf C rss Reverse Transfer Capacitance 2 pf R g Gate resistance V GS =V, V DS =V, f=mhz..5 Ω SWITCHING PRMETERS Q g (V) Total Gate Charge 3 nc Q g (.5V) Total Gate Charge 7 22 nc V GS =V, V DS =2.5V, I D =2 Q gs Gate Source Charge 5.5 nc Q gd Gate Drain Charge 3.5. nc t D(on) Turn-On DelayTime 7.5 ns t r Turn-On Rise Time V GS =V, V DS =2.5V, R L =.Ω, 22 ns t D(off) Turn-Off DelayTime R GEN =3Ω ns t f Turn-Off Fall Time ns t rr Body Diode Reverse Recovery Time I F =2, di/dt=/µs 3 3 ns Q rr Body Diode Reverse Recovery Charge I F =2, di/dt=/µs 9 23 nc : The value of R θj is measured with the device mounted on in 2 FR- board with 2oz. Copper, in a still air environment with T =25 C. The Power dissipation SM is based on R θj and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of 75 C may be used if the PCB allows it. B. The power dissipation is based on T J(MX) =75 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MX) =75 C. D. The R θj is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MX) =75 C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on in 2 FR- board with 2oz. Copper, in a still air environment with T =25 C. The SO curve provides a single pulse rating. Rev: prial 27 mω THIS PRODUCT HS BEEN DESIGNED ND QULIFIED FOR THE CONSUMER MRKET. PPLICTIONS OR USES S CRITICL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS RE NOT UTHORIZED. OS DOES NOT SSUME NY LIBILITY RISING OUT OF SUCH PPLICTIONS OR USES OF ITS PRODUCTS. OS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS ND RELIBILITY WITHOUT NOTICE. lpha & Omega Semiconductor, Ltd.
3 TYPICL ELECTRICL ND THERML CHRCTERISTICS V V.5V V DS =5V I D () 3.5V 3.V V GS = Fig : On-Region Characteristics I D () C 25 C Figure 2: Transfer Characteristics 93 R DS(ON) (mω) V GS =.5V V GS =V Normalized On-Resistance..2 V GS =V, 3 V GS =.5V, I D () Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature 2( C) Figure : On-Resistance vs. Junction Temperature 2 I D =3 25 C R DS(ON) (mω) 25 C 25 C Figure 5: On-Resistance vs. Gate-Source Voltage I S () C V SD (Volts) Figure : Body-Diode Characteristics lpha & Omega Semiconductor, Ltd.
4 TYPICL ELECTRICL ND THERML CHRCTERISTICS 3 2 V DS =2.5V I D =2 Capacitance (pf) 2 2 C oss C iss Q g (nc) Figure 7: Gate-Charge Characteristics T J(Max) =75 C, 2 C rss Figure : Capacitance Characteristics 93 I D (mps) R DS(ON) limited DC µs µs ms Power (W) 2 T J(Max) =75 C.. Figure 9: Maximum Forward Biased Safe Operating rea (Note F) Pulse Width 2 (s) Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +M.Z θjc.r θjc R θjc =3 Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note F) T on T lpha & Omega Semiconductor, Ltd.
5 TYPICL ELECTRICL ND THERML CHRCTERISTICS I D (), Peak valanche Current T = C Time in avalanche, t (s) Figure 2: Single Pulse valanche capability t L ID = BV V T =25 C DD Power Dissipation (W) T CSE ( C) Figure 3: Power De-rating (Note B) 93 Current rating I D () 3 2 Power (W) 3 2 T =25 C T CSE ( C) Figure : Current De-rating (Note B) Figure 5: Single Pulse Power Rating Junction-to- mbient (Note H) Z θj Normalized Transient Thermal Resistance... In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse D=T on /T T J,PK =T +M.Z θj.r θj R θj = T on T..... Figure : Normalized Maximum Transient Thermal Impedance (Note H) lpha & Omega Semiconductor, Ltd.
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested TO-220F. Symbol
6V,2A NChannel MOSFET General Description The FQP2N6 & FQPF2N6 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in
More informationAOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60
AOT2S6L/AOB2S6L/AOTF2S6L/AOTF2S6 6V 2A αmos TM Power Transistor General Description The AOT2S6L & AOB2S6L & AOTF2S6L & AOTF2S6 have been fabricated using the advanced αmos TM high voltage process that
More informationAdvanced Power Electronics Corp.
dvanced Power Electronics Corp. P6679GH/J-HF Halogen-Free Product P-CHNNEL ENHNCEMENT MODE POWER MOSFET Lower On-resistance D BV DSS -3V Simple Drive Requirement R DS(ON) 9mΩ Fast Switching Characteristic
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WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationUNISONIC TECHNOLOGIES CO., LTD UT4422
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.51Ω. 100% UIS Tested 100% R g Tested. Top View TO-220F. Symbol
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AOTF42S6 6V 39A α MOS TM Power Transistor General Description The AOTF42S6 have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and
More informationAP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
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More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
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More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
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DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationAP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P9997GP RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D
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General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
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