Symbol Drain-Source Voltage -30 Gate-Source Voltage Continuous Drain T A =25 C T A =70 C Pulsed Drain Current C V DS V GS
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- Verity Patterson
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1 3V PChannel EnhancementMode MOSFET LP347LT1G V DS 3V I D (V GS = V) 4.1A R DS(ON) (V GS = V) < 7mΩ R DS(ON) (V GS = 4.5V) < m Ω FEATURES The LP347LT1G uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. SOT 23 (TO 236AB) D ORDERING INFORMATION Device Marking LP347LT1G A7 Shipping 3/Tape&Reel G S LP347LT3G A7 /Tape&Reel MAXIMUM RATINGS (T A = 25 o C unless otherwise noted) Parameter Symbol Maximum DrainSource Voltage 3 GateSource Voltage Continuous Drain T A =25 C Current T A =7 C Pulsed Drain Current C Power Dissipation B T A =25 C T A =7 C Junction and Storage Temperature Range T J, T STG 55 to 15 V DS V GS 4.1 I D I DM P D ± Units V V A W C THERMAL CHARACTERISTICS (T A = 25 o C unless otherwise noted) Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 7 9 R Maximum JunctiontoAmbient A D θja SteadyState 125 Maximum JunctiontoLead SteadyState 63 8 R θjl Units C/W C/W C/W A: The value of R θja is measured with the device mounted on 1in 2 FR4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. 1/6
2 ELECTRICAL CHARACTERISTICS (T A = 25 o C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25µA, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =V 1 T J =55 C 5 µa I GSS GateBody leakage current V DS =V, V GS = ±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA V I D(ON) On state drain current V GS =V, V DS =5V 25 A R DS(ON) V GS =V, I D =4.1A 7 mω Static DrainSource OnResistance T J =125 C 95 V GS =4.5V, I D =3A mω g FS Forward Transconductance V DS =5V, I D =4A S V SD Diode Forward Voltage I S =1A,V GS =V.7 1 V I S Maximum BodyDiode Continuous Current 2 A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =15V, f=1mhz 7 13 pf C rss Reverse Transfer Capacitance pf R g Gate resistance V GS =V, V DS =V, f=1mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge nc Q g (4.5V) Total Gate Charge nc V GS =V, V DS =15V, I D =4A Q gs Gate Source Charge nc Q gd Gate Drain Charge nc t D(on) TurnOn DelayTime 7.5 ns t r TurnOn Rise Time V GS =V, V DS =15V, R L =3.6Ω, 5.5 ns t D(off) TurnOff DelayTime R GEN =3Ω 19 ns t f TurnOff Fall Time 7 ns t rr Body Diode Reverse Recovery Time I F =4A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =4A, di/dt=a/µs nc 2/6
3 TYPICAL ELECTRICAL CHARACTERISTICS LP347LT1G V 6V 4.5V 25 V DS =5V I D (A) V V GS =3.5V I D (A) C 25 C V DS (Volts) Fig 1: OnRegion Characteristics (Note E) V GS (Volts) Figure 2: Transfer Characteristics (Note E) R DS(ON) (mω) V GS =4.5V V GS =V Normalized OnResistance V GS =V I D =4A V GS =4.5V I D =3A I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 18 (Note E) 1 I D =4A 1.E2 1.E1 4 1.E R DS(ON) (mω) C I S (A) 1.E1 1.E2 1.E3 125 C 25 C 4 25 C 1.E V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E) 1.E V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) 3/6
4 TYPICAL ELECTRICAL CHARACTERISTICS LP347LT1G 8 8 V DS =15V I D =4A 6 C iss V GS (Volts) Capacitance (pf) 4 C oss Q g (nc) Figure 7: GateCharge Characteristics C rss V DS (Volts) Figure 8: Capacitance Characteristics. 4 T A =25 C. µs 3 I D (Amps) 1. R DS(ON) limited µs 1ms ms Power (W).1 T J(Max) =15 C T A =25 C V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) s DC Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =125 C/W Single Pulse In descending order D=.5,.3,.1,.5,.2,.1, single pulse T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) P D T on 4/6
5 LP347LT1G Gate Charge Test Circuit & Waveform Qg DUT Vds V Qgs Qgd Ig Charge Vds RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) t f Rg DUT Vdd 9% Vds % Diode Recovery Test Circuit & Waveforms Vds DUT Q = Idt rr Vds Ig Isd L Vdd Isd Vds I F di/dt I RM t rr Vdd 5/6
6 LP347LT1G SOT23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI A L Y14.5M, CONTROLLING DIMENSION: INCH. V G B S DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H D H C K J J K L S V inches mm 6/6
I D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl
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Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
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Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent
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NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load
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3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary
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3V PChannel MOFET General escription The AO4413 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as a load
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested. Symbol. Symbol
6,2A NChannel MOSFET General Description The AOK2N6 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by
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AO347 3V PChannel MOFET eneral escription The AO347 uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
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AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
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3V PChannel MOFET General escription The AO4435 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating. This device is suitable for use as a load
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 5 G
V NChannel MOFET RFET TM General Description RFET TM AON7 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device is
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationV DS -20V I D (at V GS =-4.5V) -5A R DS(ON) (at V GS = -1.8V) ESD protected SOT23 D G G
2V PChannel MOFET eneral escription The AO345A uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use
More informationV DS. 100% UIS Tested 100% R g Tested SOIC-8 D
3V PChannel MOFET General escription The AO447 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
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N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is
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3V PChannel MOFET eneral escription The AO349 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product
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3V PChannel MOFET eneral escription The AO741 uses advanced trench technology to provide excellent R (ON), low gate charge, and operation with gate voltages as low as.5v, in the small OT33 footprint. It
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AO447A PChannel Enhancement Mode Field Effect Transistor General escription The AO447A/L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating.
More informationV DS. ESD Protected 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
More informationV DS. 100% UIS Tested 100% R g Tested
3V NChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.5v. This device makes an excellent high
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