V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875

Transcription

1 APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses Kelvin source for easy drive ery low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance CK EK G E C Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit CES Collector - Emitter Breakdown oltage 12 I C Continuous Collector Current T c = 25 C 15 T c = 8 C 875 A I CM Pulsed Collector Current T c = 25 C 15 GE Gate Emitter oltage ±2 P D Maximum Power Dissipation T c = 25 C 44 W RBSOA Reverse Bias Safe Operating Area T j = 15 C 115 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT52 on APTGL875U12DAG Rev April, 29

2 All T j = 25 C unless otherwise specified APTGL875U12DAG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I CES Zero Gate oltage Collector Current GE = ; CE = 12 4 ma CE(sat) Collector Emitter Saturation oltage GE =15 T j = 25 C I C = 75A T j = 15 C 2.2 GE(th) Gate Threshold oltage GE = CE, I C = 3 ma Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C ies Input Capacitance GE = 46.5 C oes Output Capacitance CE = nf C res Reverse Transfer Capacitance f = 1MHz 2.55 Q G Gate charge GE = -8 / 15 ; CE =6 I C =75A 4.25 µc T d(on) Turn-on Delay Time Inductive Switching (25 C) 16 T r Rise Time GE = ±15 3 CE = 6 ns T d(off) Turn-off Delay Time I 34 C = 75A T f Fall Time R G =.6Ω 8 T d(on) Turn-on Delay Time Inductive Switching (15 C) 17 GE = ±15 T r Rise Time 4 CE = 6 ns T d(off) Turn-off Delay Time I C = 75A 45 Fall Time R G =.6Ω 17 T f E on Turn-on Switching Energy GE = ±15 CE = 6 T J = 15 C 68 mj E off Turn-off Switching Energy I C = 75A R G =.6Ω T J = 15 C 72.5 mj I SC Short circuit current GE 15 ; CC =9 t p 1µs ; T j =15 C 3 A Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit RRM Maximum Repetitive Reverse oltage 12 I RM Maximum Reverse Leakage Current R =12 T j = 25 C 7 T j = 125 C 35 µa I F DC Forward Current T j = 9 C 42 A I F = 42A F Diode Forward oltage I F = 84A 3 I F = 42A T j = 125 C 1.8 t rr Q rr Reverse Recovery Time Reverse Recovery Charge I F = 42A R = 8 di/dt = 14A/µs T j = 25 C 265 T j = 125 C 35 T j = 25 C 3.9 T j = 125 C ns µc APTGL875U12DAG Rev April, 29

3 APTGL875U12DAG Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R thjc Junction to Case Thermal Resistance IGBT.34 Series diode.11 C/W ISOL RMS Isolation oltage, any terminal to case t =1 min, I isol<1ma, 5/6Hz 25 T J Operating junction temperature range T STG Storage Temperature Range C T C Operating Case Temperature -4 1 Torque Mounting torque To Heatsink M6 3 5 For teminals M N.m Wt Package Weight 28 g SP6 Package outline (dimensions in mm) See application note APT61 - Mounting Instructions for SP6 Power Modules on Typical IGBT Performance Curve Fmax, Operating Frequency (khz) Operating Frequency vs Collector Current 18 CE =6 D=5% 15 R G =.6 Ω T J =15 C 12 Tc=75 C ZS 9 6 ZCS 3 Hard switching I C (A) APTGL875U12DAG Rev April, 29

4 APTGL875U12DAG 15 Output Characteristics ( GE =15) 15 Output Characteristics T J =25 C T J =15 C T J = 15 C GE =19 GE = GE = CE () CE () Transfert Characteristics T J =25 C 2 15 Energy losses vs Collector Current CE = 6 GE = 15 R G = 1.5.Ω T J = 15 C Eon 75 5 T J =15 C E (mj) 1 5 Eoff GE () E (mj) Switching Energy Losses vs Gate Resistance CE = 6 GE =15 I C = 75A T J = 15 C Eon Eoff Reverse Bias Safe Operating Area GE =15 T J =15 C R G =.6Ω Gate Resistance (ohms) CE ().4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance ( C/W).9.3 IGBT Single Pulse rectangular Pulse Duration (Seconds) APTGL875U12DAG Rev April, 29

5 Typical Series diode Performance Curve Thermal Impedance ( C/W) APTGL875U12DAG Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Single Pulse Rectangular Pulse Duration (Seconds) I F, Forward Current (A) Forward Current vs Forward oltage T J =25 C t rr, Reverse Recovery Time (ns) Trr vs. Current Rate of Charge R =8 84 A 42 A 21 A F, Anode to Cathode oltage () -di F /dt (A/µs) Q RR, Reverse Recovery Charge (µc) QRR vs. Current Rate Charge R =8 84 A 42 A 21 A di F /dt (A/µs) I RRM, Reverse Recovery Current (A) IRRM vs. Current Rate of Charge R =8 84 A 42 A 21 A di F /dt (A/µs) C, Capacitance (pf) Capacitance vs. Reverse oltage R, Reverse oltage () Max. Average Forward Current vs. Case Temp. 6 Duty Cycle =.5 T J =175 C 48 I F (A) (A) Case Temperature (ºC) APTGL875U12DAG Rev April, 29

6 APTGL875U12DAG Thermal impedance model IGBT RC Final Model R1 =.75 Ω R2 =.176 Ω R3 =.89 Ω C1 =.129 F C2 = 2.39 F C3 = F Thermal impedance series diode RC Final Model R1 =.241 Ω R2 =.57 Ω R3 =.29 Ω C1 =.398 F C2 =.634 F C3 = F Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,583 4,748,13 5,283,22 5,231,474 5,434,95 5,528,58 and foreign patents. U.S and Foreign patents pending. All Rights Reserved APTGL875U12DAG Rev April, 29