IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
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1 STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness.they are designed for the applications such as UPS and SMPS. Features Low V CE(sat) non punch through IGBT technology 10μs short circuit capability V CE(sat) with positive temperature coefficient Latch-up free Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications UPS Switching mode power supplies Electronic welders at f SW up to 25kHz Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description GD400SGK120C2S Units V CES Collector-Emitter Voltage 1200 V 2009 STARPOWER Semiconductor Ltd. 7/6/2009 1/8 Rev.A
2 Symbol Description GD400SGK120C2S Units V GES Gate-Emitter Voltage ±20V V I C Collector T C = T C = I CM(1) Pulsed Collector Current t p =1ms 800 A I F Diode Continuous Forward Current 400 A I FM Diode Maximum Forward Current 800 A P D Maximum power T j = W T SC Short Circuit Withstand T j = μs T j Operating Junction Temperature -40 to +150 T STG Storage Temperature Range -40 to +125 I 2 t-value, Diode V R =0V, t=10ms, T j = A 2 s V ISO Isolation Voltage RMS, f=50hz, t=1min 2500 V Power Terminal Screw:M4 1.1 to 2.0 Mounting N.m Power Terminal Screw:M6 2.5 to 5.0 Torque Mounting Screw:M6 3.0 to 6.0 N.m Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT T C =25 unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BV CES I CES I GES Collector-Emitter T j = V Breakdown Voltage V CE =V CES,V GE =0V, Collector Cut-Off Current 5.0 ma T j =25 Gate-Emitter Leakage V GE =V GES,V CE =0V, 400 na Current T j =25 On Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V GE(th) V CE(sat) Gate-Emitter I C =5.0mA,V CE =V GE, V Threshold Voltage T j =25 I C =400A,V GE =15V,T j = Collector to Emitter I C =400A,V GE =15V, V Saturation Voltage 2.5 T j =125 Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units t d(on) Turn-On Delay Time V CC =600V,I C =400A, 258 ns t r Rise Time R G =3.3Ω, V GE =±15V, 110 ns t d(off) Turn-Off Delay Time T j = ns 2009 STARPOWER Semiconductor Ltd. 7/6/2009 2/8 Rev.A
3 t f Fall Time 70 ns E on E off Turn-On Switching V CC =600V,I C =400A, Loss R G =3.3Ω, V GE =±15V, 45 mj Turn-Off Switching T j = 25 Loss 26 mj t d(on) Turn-On Delay Time 260 ns t r Rise Time 120 ns t d(off) Turn-Off Delay Time 300 ns V CC =600V,I C =400A, t f Fall Time 80 ns R G =3.3Ω, V GE =±15V, Turn-On Switching E on T j = mj Loss E off Turn-Off Switching 40 mj Loss C ies Input Capacitance 74.7 nf C oes Output Capacitance V CE =25V, f=1.0mhz, 3.3 nf C res I SC Reverse Transfer V GE =0V Capacitance 0.64 nf t S C 10μs, V GE =15V, SC Data T j =125, V CC =900V, 2400 A V CEM 1200V L CE Stray Inductance 16 nh Module lead R CC +EE resistance, terminal to T C = mω chip Electrical Characteristics of DIODE T C =25 unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Q r I RM E rec Diode Forward T j = I F =400A V Voltage T j = Diode Reverse T j =25 31 μc Recovery Charge T j = I F =400A, Diode Peak T j = V R =600V, Reverse Recovery A di/dt=-4100a/μs, T j = Current V GE =-15V Reverse Recovery T j =25 12 mj Energy T j = Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case (IGBT Part, per 1/2 Module) 0.05 K/W R θjc Junction-to-Case (DIODE Part, per 1/2 Module) 0.08 K/W R θcs Case-to-Sink (Conductive grease applied) K/W Weight Weight of Module 340 g 2009 STARPOWER Semiconductor Ltd. 7/6/2009 3/8 Rev.A
4 Fig 1. Typical Output Characteristics Fig 2. Typical Transfer Characteristics Fig 3. Switching Loss vs Collector Current Fig 4. Switching Loss vs Gate Resistor 2009 STARPOWER Semiconductor Ltd. 7/6/2009 4/8 Rev.A
5 Fig 5. Gate Charge Characteristics Fig 6. Typical Capacitance vs Collector-Emitter Voltage Fig 7. Typical Switching Times vs I C Fig 8. Typical Switching Times vs Gate Resistance R G 2009 STARPOWER Semiconductor Ltd. 7/6/2009 5/8 Rev.A
6 Fig 9. Typical Forward Characteristics (diode) Fig 10. Transient thermal impedance 2009 STARPOWER Semiconductor Ltd. 7/6/2009 6/8 Rev.A
7 Package Dimension Dimensions in Millimeters 2009 STARPOWER Semiconductor Ltd. 7/6/2009 7/8 Rev.A
8 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 7/6/2009 8/8 Rev.A
Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
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