High Power Rugged Type IGBT Module

Transcription

1 ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Features High Speed Switching B CES = 6 Low Conduction Loss : CE(sat) = 2.1 (typ.) Fast & Soft ntiparallel FWD Short circuit rated : Min. 1uS at TC=1 Reduced EMI and RFI Isolation Type Package pplications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS, CCF, Robotics, Servo Controls, High Speed SMPS bsolute Maximum T j =25 (Per Leg) Equivalent Circuit DM2G3SH6N Equivalent Circuit and Package Package : 7DM3 Series Please see the package out line information Symbol Parameter Conditions Ratings Unit CES CollectorEmitter oltage 6 GES GateEmitter oltage ±2 I C Collector Current Tc = Tc = 8 3 I CM (1) Pulsed Collector Current 6 I F Diode Continuous Forward Current Tc = 8 3 I FM Diode Maximum Forward Current 6 T SC Short Circuit Withstand Time Tc = 1 1 us P D Maximum Power Dissipation Tc = W T j Operating Junction Temperature 4 ~ 15 T stg Storage Temperature Range 4 ~ 125 iso Isolation oltage C 1 minute 25 TL Maximum Lead Temp. for soldering Purposes, 1/8 from case for 9 seconds Mounting screw Torque :M N.m Power terminals screw Torque :M6 4. N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature 1/7

2 ug. 29 DM2G3SH6N Electrical Characteristics of (unless otherwise specified) Symbol Parameter Conditions alues Min. Typ. Max. Unit B CES C E Breakdown oltage GE =, I C = 25u 6 ΔB CES / Temperature Coeff. of GE =, I C = 1.m.6 / ΔT J Breakdown oltage GE(th) G E threshold voltage I C =3m, CE = GE I CES Collector cutoff Current I C =3, GE C = u I GES G E leakage Current I C =3, GE C =1 ±3 n CE(sat) Collector to Emitter I C =3, GE C = saturation voltage I C =3, GE C =1 2.4 t d(on) Turn on delay time CC = 3, I C =3 14 t r Turn on rise time GE = ±15 15 t d(off) Turn off delay time R G = 2.1Ω 18 t f Turn off fall time Inductive C = E on Turn on Switching Loss 8.5 mj E off Turn off Switching Loss 15 mj E ts Total Switching Loss 23.5 mj T sc Short Circuit Withstand Time CC = 3, GE = ±15 1 C = 1 Q g Total Gate Charge CC = 3 99 Q ge GateEmitter Charge GE =± Q gc GateCollector Charge I C = /7

3 ug. 29 DM2G3SH6N Electrical Characteristics of (unless otherwise specified) Symbol Parameter Conditions alues Min. Typ. Max. Unit FM Diode Forward oltage I F =3 Tc = t rr Diode Reverse Recovery Time I F =3, R =3 di/dt= 2/uS Tc = I rr Diode Peak Reverse Recovery Current Tc = Q rr Diode Reverse Recovery Charge Tc =1 Thermal Characteristics and Weight Symbol Parameter Conditions alues Min. Typ. Max. Unit R θjc JunctiontoCase(IGBT Part, Per 1/2 Module).14 /W R θjc JunctiontoCase(DIODE Part, Per 1/2 Module).24 /W R θcs CasetoSink ( Conductive grease applied).35 /W Weight Weight of Module 36 g 3/7

4 ug. 29 DM2G3SH6N Performance Curves Collector Current, IC [] GE =1 Collector Current, IC [] GE = Collector Emitter oltage, CE [] Fig 1. Typical Output characteristics Collector Emitter oltage, CE [] Fig 2. Typical Output characteristics 6 6 Collector Current, IC [] Load Current [] Duty cycle = 5% Power Dissipation = 4W Collector Emitter oltage, CE [] Fig 3. Typical Saturation oltage characteristics Frequency [KHz] Fig 4. Load Current vs. Frequency Collector Emitter oltage, CE [] IC= Collector Emitter oltage, CE [] IC= Gate Emitter oltage, GE [] Gate Emitter oltage, GE [] Fig 5. Typical Saturation oltage vs. GE Fig 6. Typical Saturation oltage vs. GE 4/7

5 ug. 29 DM2G3SH6N Gate Emitter oltage, GE [] I C =3 CC= IGBT : DIODE :.1 1.E5 2.E1 4.E1 6.E1 8.E1 1.E+ Gate Charge, Qg [] Fig 7. Capacitance characteristics Rectangular Pulse Duration Time [sec] Fig 8. Transient Thermal Impedance Collector Current, IC [] 1 1 Collector Current, IC [] Collector Emitter oltage, CE [] Fig 9. RBSO characteristics Collector Emitter oltage, CE [] Fig 1. SCSO characteristics 1 Ic MX. (Pulsed) 1 1 Ic MX. (Continuous) DC Operation 1ms 1us 5us Single Nonrepetitive 1 Pulse T c = 25 Curves must be derated linerarly with increase In temperature Collector Current, Ic [ ] T J 15 GE CollectorEmitter oltage, CE Fig 11. SO Characteristic [] Case Temperature, Tc [ ] Fig12. rated Current vs. Case Temperature 5/7

6 ug. 29 DM2G3SH6N 1 8 T J 15 P D = f(tc) 6 P D [ W ] Forward Current, IF [] Tc [ ] Fig 13. Power Dissipation vs. Case Temperature Forward Drop oltage, F [] Fig 14. Forward characteristics 6/7

7 ug. 29 DM2G3SH6N Package Out Line Information 7DM3 7/7