600V APT75GN60B APT75GN60BG*

Transcription

1 G C E TYPICAL PERFORMANCE CURVES APT75GNB(G) V APT75GNB APT75GNBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive (ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO-7 V Field Stop Trench Gate: Low (on) Easy Paralleling µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS G C E MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Symbol Parameter APT75GNB(G) UNIT S Collector-Emitter Voltage Gate-Emitter Voltage ±3 Volts 1 Continuous Collector Current T C 155 Continuous Collector T C = 11 C 93 Amps M Pulsed Collector Current 1 5 SSOA Switching Safe Operating = 175 C V P D Total Power Dissipation 53 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.3" from Case for 1 Sec. -55 to C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = ma) (TH) (ON) ES I GES (int) Gate Threshold Voltage ( =, = 1mA, T j ) Collector-Emitter On Voltage (,, T j ) Collector-Emitter On Voltage (,, T j ) Collector Cut-off Current ( = V, = V, T j ) Collector Cut-off Current ( = V, = V, T j ) Gate-Emitter Leakage Current ( = ±V) Intergrated Gate Resistor TBD CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Volts µa na Ω Rev A 9-5

2 DYNAMIC CHARACTERISTICS Symbol Characteristic C ies C oes C res P Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge SSOA Switching Safe Operating Area Test Conditions Capacitance = V, = 5V f = 1 MHz Gate Charge = 3V = 175 C, =.3Ω 7, = 15V, L = 1µH, = V APT75GNB(G) MIN TYP MAX UNIT 5 37 pf V 85 3 nc 7 5 A SCSOA Short Circuit Safe Operating Area V CC = V,,, =.3Ω 7 µs t d(on) t r t d(off) t f E on1 E on E off t d(on) t r t d(off) t f E on1 E on E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy Inductive Switching (5 C) V CC = V = 1.Ω 7 = +5 C Inductive Switching (15 C) V CC = V = 1.Ω 7 = +15 C ns µj ns µj THERMAL AND MECHANICAL CHARACTERISTICS Symbol R θjc R θjc W T Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX.8 N/A 5.9 UNIT C/W gm Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-75 Method 371. E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 1, but with a Silicon Carbide diode. 5 E on is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 1,.) E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-1. (See Figures 1, 3.) 7 is external gate resistance, not including (int) nor gate driver impedance. (MIC5) 8 Continuous current limited by package pin temperature to 1A. APT Reserves the right to change, without notice, the specifications and information contained herein.

3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V) (NORMALIZED) V T 1V J 1 = 175 C 9V = -55 C 5 8V 7V , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) µs PULSE TEST<.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) , DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) APT75GNB(G) µs PULSE TEST <.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE, On State Voltage vs Junction Temperature FIGURE 1, Output Characteristics( ) = 175 C FIGURE 3, Transfer Characteristics = 15A = -55 C. 5µs PULSE TEST <.5 % DUTY CYCLE = , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature FIGURE, Output Characteristics ( ) 8 1V 13 & 15V = 1V = 3V FIGURE, Gate Charge = 15A = Lead Temperature Limited = 8V Rev A 9-5

4 APT75GNB(G) Rev A 9-5 SWITCHING ENERGY LOSSES (mj) E ON, TURN ON ENERGY LOSS (mj) t r, RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) E FIGURE 9, Turn-On Delay Time vs Collector Current = V, or =15 C = 1.Ω L = 1 µh = 1.Ω, L = 1µH, = V E FIGURE 11, Current Rise Time vs Collector Current = V = 1.Ω E FIGURE 13, Turn-On Energy Loss vs Collector Current , GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mj) E OFF, TURN OFF ENERGY LOSS (mj) t f, FALL TIME (ns) t d (OFF), TURN-OFF DELAY TIME (ns) =15V, =15 C = V = 1.Ω L = 1µH =15V, =5 C = 5 or 15 C, E FIGURE 1, Turn-Off Delay Time vs Collector Current E FIGURE 1, Current Fall Time vs Collector Current E FIGURE 1, Turn Off Energy Loss vs Collector Current = V = 1.Ω,, = V = V = 1.Ω A 15A = 1.Ω, L = 1µH, = V 15A 15A , JUNCTION TEMPERATURE ( C) FIGURE 1, Switching Energy Losses vs Junction Temperature

5 TYPICAL PERFORMANCE CURVES 7, 5 APT75GNB(G) C, CAPACITANCE ( P F) 1, 5 C ies C oes C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area.3 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE t Duty Factor D = t1 /t Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 1 Junction temp. ( C) Power (watts) Case temperature. ( C) RC MODEL FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Rev A 9-5 F MAX, OPERATING FREQUENCY (khz) T C = 75 C D = 5 % = V = 1.Ω Figure, Operating Frequency vs Collector Current F max = min (f max, f max ).5 f max1 = td(on) + t r + t d(off) + t f f max = P diss = P diss - P cond E on + E off - T C R θjc

6 Collector APT75GNB(G) APT75DQ 1% Gate Voltage t d(on) V CC t r Collector Current 5% 9% 5% D.U.T. A Switching Energy 1% Collector Voltage Figure 1, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitions 9% Gate Voltage t d(off) t f 9% Collector Voltage 1% Collector Current Switching Energy Figure 3, Turn-off Switching Waveforms and Definitions.9 (.185) 5.31 (.9) 1.9 (.59).9 (.98) TO-7 Package Outline e1 SAC: Tin, Silver, Copper.15 (.) BSC 15.9 (.1) 1. (.) 5.38 (.1). (.).8 (.819) 1. (.85) 3.5 (.138) 3.81 (.15).5 (.177) Max..87 (.113) 3.1 (.13) Rev A 9-5. (.1).79 (.31).1 (.87).59 (.1) (.78).3 (.8) 1.1 (.) 1. (.55) 5.5 (.15) BSC -Plcs. Dimensions in Millimeters and (Inches) 1.5 (.5).13 (.8) Gate Collector Emitter

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