Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

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1 7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo drive amplifier Uninterruptible power supply Maximum ratings and characteristics bsolute maximum ratings (Tc=2 C unless without specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 12 ±2 IC Continuous Tc=2 C 3 Collector current Tc=8 C 2 ICP 1ms Tc=2 C 7 Tc=8 C -IC 2 Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC 1 device Continuous Tc=2 C Tc=8 C ±2 2 1 W ICP 1ms Tc=2 C Tc=8 C 3 Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device W verage output current Surge current (Non-Repetitive) IO IFSM Hz/6Hz sine wave Tj=1 C, 1ms 2 26 I 2 t (Non-Repetitive) I 2 t half sine wave s Operating junction temperature Tj +1 C Storage temperature Tstg -4 to +12 C Isolation between and copper base *2 iso C : 1 minute C 2 voltage between thermistor and others *3 C 2 Mounting screw torque 3. *1 N m *1 Recommendable value : 2. to 3. N m (M) *2 ll s should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 1 to 24 should be connected together and shorted to copper base. Converter Brake Inverter

2 7MBR2S12 Elecical characteristics (Tj=2 C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES GE(th) CE(sat) CE=12, GE= CE=, GE=±2 CE=2, IC=2m GE=1, Ic=2 chip m µ Input capacitance Turn-on time Cies GE=, CE=1, f=1mhz CC=6 IC= pf µs (i) GE=±1.1 Turn-off RG=1Ω Forward on voltage F IF=2 chip Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF=2 CES=12, GE= CE=, GE=± µs m µ Collector-Emitter saturation voltage CE(sat) IC=1, GE=1 chip Turn-on time CC=6 IC= µs Turn-off time GE=±1 RG=82Ω Reverse current IRRM R=12 1. m Forward on voltage FM IF=2 chip Reverse current IRRM R=16 1. m Resistance R T=2 C Ω T=1 C B value B T=2/ C K Thermistor Converter Brake Inverter Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT.69 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD 1.3 Brake IGBT 1.14 C/W Converter Diode.9 Contact thermal resistance * Rth(c-f) With thermal compound. * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Therm istor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 1(Ew) 7(B) 4(U) () 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 24(N1)

3 Characteristics (Representative) 7MBR2S12 6 Tj= 2 o C (typ.) 6 Tj= 12 o C (typ.) GE= GE= GE=1 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 2 o C (typ.) Tj= 2 o C Tj= 12 o C Ic= Ic= 2 Ic= Gate - Emitter voltage : GE [ ] 1 Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= 2 o C 1 Dynamic Gate charge (typ.) cc=6, Ic=2, Tj= 2 o C Capacitance : Cies, Coes, Cres [ pf ] 1 Cies Coes Gate - Emitter voltage : GE [ ] Cres Gate charge : Qg [ nc ]

4 7MBR2S12 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) 1 cc=6, GE=±1, Rg=1Ω, Tj=2 C 1 cc=6, GE=±1, Rg=1Ω, Tj=12 C Switching time :,,, [ nsec ] 1 Switching time :,,, [ nsec ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=6, Ic=2, GE=±1, Tj=2 C 7 cc=6, GE=±1, Rg=1Ω 6 Eon(12 o C) Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon(2 o C) Eoff(12 o C) Eoff(2 o C) Err(12 o C) Err(2 o C) 1 1 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) cc=6, Ic=2, GE=±1, Tj=12 C 6 Reverse bias safe operating area +GE=1, -GE<1, Rg>1Ω, Tj<12 C = = = Switching loss : Eon, Eoff, Err [ mj/pulse ] 1 1 Eon Eoff Err 1 1 Gate resistance : Rg [ Ω ]

5 7MBR2S12 6 Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=6, GE=±1, Rg=1 Ω Tj=12 o C Tj=2 o C r(12 o C) Forward current : IF [ ] Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r(2 o C) Irr(12 o C) Forward on voltage : F [ ] Irr(2 o C) Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) 6 Tj= 2 o C Tj= 12 o C Forward current : IF [ ] Forward on voltage : FM [ ] Transient thermal resistance [ Thermistor ] Temperature characteristic (typ.) 2 1 FWD[Inverter] Thermal resistanse : Rth(j-c) [ o C/W ] 1.1 IGBT[Brake] Conv. Diode IGBT[Inverter] Resistance : R [ k Ω ] Pulse width : Pw [ sec ] Temperature [ o C ]

6 7MBR2S12 3 Tj= 2 o C (typ.) 3 Tj= 12 o C (typ.) 3 GE= GE= GE=1 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 2 o C (typ.) 3 Tj= 2 o C Tj= 12 o C Ic= 3 Ic= 1 Ic= Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= 2 o C 1 Dynamic Gate charge (typ.) cc=6, Ic=1, Tj= 2 o C Capacitance : Cies, Coes, Cres [ pf ] 1 1 Cies Coes Cres Gate - Emitter voltage : GE [ ] Gate charge : Qg [ nc ]

7 7MBR2S12 Outline Drawings, mm

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