FP7G50US60 Transfer Molded Type IGBT Module

Transcription

1 FP7G5US6 Transfer Molded Type IGBT Module General Description Fairchild s New IGBT Modules ( Transfer Molded Type ) provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor control, Uninterrupted Power Supplies (UPS) and general Inverters where short circuit ruggedness is a required feature. Features Short Circuit rated C, Vge=5V High Speed Switching Low Saturation Voltage : Vce(sat) High Input Impedance Fast & Soft AntiParallel FWD Package Code : EPM7 July 28 PowerSPM TM tm Application Welders AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS Internal Circuit Diagram 2 Absolute Maximum Ratings Symbol Description Rating Units V CES CollectorEmitter Voltage 6 V S GateEmitter Voltage ± 2 V Collector = 25 C 5 A M () Pulsed Collector Current A I F Diode Continuous Forward = C 5 A I FM Diode Maximum Forward Current A T SC Short Circuit Withstand = C us P D Maximum Power = 25 C 25 W T J Operating Junction Temperature 4 to +25 C T stg Storage Temperature Range 4 to +25 C V iso Isolation AC minute 25 V Mounting Torque Power Terminals Screw : M5 2. N.m Mounting Screw : M5 2. N.m 28 Fairchild Semiconductor Corporation FP7G5US6 Rev. A

2 Pin Configuration and Pin Description 3 Top View Internal Circuit Diagram Pin Number Pin Description Pin Description Emitter of Q, IGBT, Collector of Q2, IGBT 2 Emitter of Q2, IGBT 3 Collector of Q, IGBT 4 Gate of Q, IGBT 5 Emitter of Q, IGBT 6 Gate of Q2, IGBT 7 Emitter of Q2, IGBT FP7G5US6 Rev. A 2

3 Electrical Characteristics (T J = 25 C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV CES CollectorEmitter Breakdown Voltage = V, = 25µA 6 V BV CES / T J Temperature Coeff. of Breakdown Voltage = V, = ma.6 V ES Collector Cutoff Current V CE = V CES, = V 25 ua I GES GateEmitter Leakage Current = S, V CE = V ± na On Characteristics (th) GE Threshold Voltage = V, =5mA V V CE(sat) Collector to Emitter Saturation Voltage = 5A, = 5V V Dynamic Characteristics C ies Input Capacitance 292 pf C oes Output Capacitance V CE = 3V, = V, f = MHz 4 pf C res Reverse Capacitance 75 pf Switching Characteristics t d(on) TurnOn Delay Time 58 ns t r Rise Time 4 ns t d(off) t f E on TurnOff Delay Time Fall Time TurnOn Switching Loss = 3 V, = 5A, R G = 5.9Ω, = 5V Inductive Load, = 25 C ns ns mj E off TurnOff Switching Loss.54 mj E ts Total Switching Loss.29 mj t d(on) TurnOn Delay Time 53 ns t r Rise Time 4 ns t d(off) t f E on TurnOff Delay Time Fall Time TurnOn Switching Loss = 3 V, = 5A, R G = 5.9Ω, = 5V Inductive Load, = 25 C ns ns mj E off TurnOff Switching Loss.68 mj E ts Total Switching Loss 2.77 mj T sc Short Circuit Withstand Time = 3 V, = = C us Q g Total Gate Charge 36 nc Q ge GateEmitter Charge V CE = 3 V, = 5A, = 5V 26 nc Q gc GateCollector Charge 76 nc FP7G5US6 Rev. A 3

4 Electrical Characteristics of DIODE (T J = 25 C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units V FM Diode Forward Voltage I F = 5A t rr I rr Q rr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Thermal Characteristics I F = 5A di / dt = A/us = 25 C = C.8 = 25 C 76 = C 38 = 25 C = C 6 = 25 C = C 44 Symbol Parameter Typ. Max. Units R θjc JunctiontoCase (IGBT Part, per /2 Module).4 C/W R θjc JunctiontoCase (DIODE Part, per /2 Module). C/W R θcs CasetoSink (Conductive grease applied).5 C/W Weight Weight of Module 9 g V ns A nc FP7G5US6 Rev. A 4

5 Typical Performance Characteristics IC, Collector Current[A] V CE, CollectorEmitter Voltage[V] Fig. Typical Output Characteristics 4 2V V 2V = V V CE, CollectorEmitter Voltage[V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level = 5V A 5A 5 5, Case Temperature[ o C] = 3A Fig 2. Typical Saturation Voltage Characteristics IC, Collector Current[A] Load Current [A] 4 V 2 GE = 5V = 25 o C V CE, CollectorEmitter Voltage[V] 2 Fig 4. Load Current vs. Frequency Duty cycle : 5% = o C Power Dissipation = 3W = 3V Load Current : peak of square wave. Frequency [Khz] Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. VCE, CollectorEmitter Voltage[V] = 3A A 5A , GateEmitter Voltage[V] VCE, CollectorEmitter Voltage[V] = 3A A 5A , GateEmitter Voltage[V] FP7G5US6 Rev. A 5

6 Capacitance[pF] Switching Time[ns] Cies Coes Cres = V, f = MHz.5 3 V CE, CollectorEmitter Voltage[V] Fig 7. Capacitance Characteristics Fig 9. TurnOff Characteristics vs. Gate Resistance 3 = 3V, = +/ 5V = 5A = 25 o C Toff Tf Tf Switching Time[ns] Switching Loss[mJ] = 3V, = +/ 5V = 5A = 25 o C R G, Gate Resistance[Ω] Fig 8. TurnOn Characteristics vs. Gate Resistance Fig. Switching Loss vs. Gate Resistance = 3V, = +/ 5V = 5A = 25 o C Ton Tr Eon Eoff 3 5 R G, Gate Resistance[Ω]. R G, Gate Resistance[Ω] Switching Time[ns] Fig. TurnOn Characteristics vs. Collector Current = 3V, = +/ 5V = 5A = 25 o C Ton Tr Switching Time[ns] Fig 2. TurnOff Characteristics vs. Collector Current = 3V, = +/ 5V = 5A = 25 o C Toff Tf , Collector Current[A] , Collector Current[A] FP7G5US6 Rev. A 6

7 Switching Loss[uJ] 3 Fig 3. Switching Loss vs. Collector = 3V, = +/ 5V = 5A = 25 o C Eoff Eon , Collector Current[A] Fig 5. SOA Characteristics VGE, GateEmitter Voltage[V] Fig 4. Gate Charge Characteristics = V 3 V 2 V R L = 5.9 Ω 2 Q g, Gate Charge[nC] Fig 6. TurnOff SOA Characteristics IC, Collector Current[A] MAX. (Pulsed) MAX. (Continuous) Single Nonrepetitive Pulse Curves must be derated linerarly with increase in temperature DC Operation us ms 5us..3 IC, Collector Current[A] Safe Operating Area = 2V, = o C V CE, CollectorEmitter Voltage[V] V CE, CollectorEmitter Voltage[V] Fig 7. RBSOA Characteristics Fig 8. Transient Thermal Impedance IC, Collector Current[A] 3 Single Nonrepetitive Pulse T J = 25 o C = 5V R G = 5.9 Ω V CE, CollectorEmitter Voltage[V] Thermal Response, Zthjc[ o C/W].. IGBT : DIODE : E Rectangular Pulse Duration[sec] FP7G5US6 Rev. A 7

8 IF, Forward Current[A] Fig 9. Forward Characteristics Common Cathode = V = 25 o C V F, Forward Voltage[V] Fig 2. Reverse Recovery Characteristics Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[xns] I F, Forward Current[A] T rr T rr I rr I rr Common Cathode di/dt = A/us = o C FP7G5US6 Rev. A 8

9 23.5±.5 23.±.5 23.± ±.5 5.8±.5.±..±. (R2.75) ±.3 93.±.5 (.) (6.5) (4.) (9.) (4.) (9.) (4.) (.) (6.5).±.5 7.5±.3 25.±.2 35.± ±. (4 ) (4 ) (R.) (9 ) 8.4± (R.65) (5 ) 9.6±. 2.2±.3 (7 ) 2.2±.3.4±.3 (5 ) FP7G5US6 Rev. A 9

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