FP7G100US60 Transfer Molded Type IGBT Module
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- Duane Lester
- 5 years ago
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1 FP7GUS6 Transfer Molded Type IGBT Module General Description Fairchild s New IGBT Modules ( Transfer Molded Type ) provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor control, Uninterrupted Power Supplies (UPS) and general Inverters where short circuit ruggedness is a required feature. Features Short Circuit rated C, Vge=5V High Speed Switching Low Saturation Voltage : Vce(sat) High Input Impedance Fast & Soft AntiParallel FWD Package Code : EPM7 July 28 PowerSPM TM tm FP7GUS6 Transfer Molded Type IGBT Module Application Welders AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS Internal Circuit Diagram 2 Absolute Maximum Ratings Symbol Description Rating Units V CES CollectorEmitter Voltage 6 V S GateEmitter Voltage ± 2 V Collector = 25 C A M () Pulsed Collector Current 2 A I F Diode Continuous Forward = C A I FM Diode Maximum Forward Current 2 A T SC Short Circuit Withstand = C us P D Maximum Power = 25 C 4 W T J Operating Junction Temperature 4 to +25 C T stg Storage Temperature Range 4 to +25 C V iso Isolation AC minute 25 V Mounting Torque Power Terminals Screw : M5 2. N.m Mounting Screw : M5 2. N.m 28 Fairchild Semiconductor Corporation FP7GUS6 Rev. A
2 Pin Configuration and Pin Description 3 Top View 2 FP7GUS6 Transfer Molded Type IGBT Module Internal Circuit Diagram Pin Number Pin Description Pin Description Emitter of Q, IGBT, Collector of Q2, IGBT 2 Emitter of Q2, IGBT 3 Collector of Q, IGBT 4 Gate of Q, IGBT 5 Emitter of Q, IGBT 6 Gate of Q2, IGBT 7 Emitter of Q2, IGBT FP7GUS6 Rev. A 2
3 Electrical Characteristics (T J = 25 C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV CES CollectorEmitter Breakdown Voltage = V, = 25µA 6 V BV CES / T J Temperature Coeff. of Breakdown Voltage = V, = ma.6 V ES Collector Cutoff Current V CE = V CES, = V 25 ua I GES GateEmitter Leakage Current = S, V CE = V ± na On Characteristics (th) GE Threshold Voltage = V, =ma V V CE(sat) Collector to Emitter Saturation Voltage = A, = 5V V Dynamic Characteristics C ies Input Capacitance 685 pf C oes Output Capacitance V CE = 3V, = V, f = MHz 725 pf C res Reverse Capacitance 35 pf FP7GUS6 Transfer Molded Type IGBT Module Switching Characteristics t d(on) TurnOn Delay Time 34 ns t r Rise Time 24 ns t d(off) t f E on TurnOff Delay Time Fall Time TurnOn Switching Loss = 3 V, = A, R G = 2.4Ω, = 5V Inductive Load, = 25 C ns ns mj E off TurnOff Switching Loss.26 mj E ts Total Switching Loss.8 mj t d(on) TurnOn Delay Time 33 ns t r Rise Time 28 ns t d(off) t f E on TurnOff Delay Time Fall Time TurnOn Switching Loss = 3 V, = A, R G = 2.4Ω, = 5V Inductive Load, = 25 C 7.2 ns ns mj E off TurnOff Switching Loss 3.8 mj E ts Total Switching Loss 4.3 mj T sc Short Circuit Withstand Time = 3 V, = = C us Q g Total Gate Charge 283 nc Q ge GateEmitter Charge V CE = 3 V, = A, = 5V 5 nc Q gc GateCollector Charge 55 nc FP7GUS6 Rev. A 3
4 Electrical Characteristics of DIODE (T J = 25 C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units V FM Diode Forward Voltage I F = A t rr I rr Q rr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Thermal Characteristics I F = A di / dt = 2 A/us = 25 C = C.8 = 25 C = C 5 = 25 C 8 = C 3 = 25 C = C 965 Symbol Parameter Typ. Max. Units R θjc JunctiontoCase (IGBT Part, per /2 Module).25 C/W R θjc JunctiontoCase (DIODE Part, per /2 Module).7 C/W R θcs CasetoSink (Conductive grease applied).5 C/W Weight Weight of Module 9 g V ns A nc FP7GUS6 Transfer Molded Type IGBT Module FP7GUS6 Rev. A 4
5 Typical Performance Characteristics IC, Collector Current[A] V CE, CollectorEmitter Voltage[V] Fig. Typical Output Characteristics V 5V 2V = V V CE, CollectorEmitter Voltage[V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level = 5V 2A A = 5A 5 5, Case Temperature[ o C] Fig 2. Typical Saturation Voltage Characteristics IC, Collector Current[A] Load Current [A] 25 = 5V 2 = 25 o C V CE, CollectorEmitter Voltage[V] 2 Fig 4. Load Current vs. Frequency Duty cycle : 5% = o C Power Dissipation = 3W = 3V Load Current : peak of square wave. Frequency [Khz] FP7GUS6 Transfer Molded Type IGBT Module Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. VCE, CollectorEmitter Voltage[V] = 5A 2A A , GateEmitter Voltage[V] VCE, CollectorEmitter Voltage[V] = 5A 2A A , GateEmitter Voltage[V] FP7GUS6 Rev. A 5
6 Capacitance[pF] Switching Time[ns] Fig 7. Capacitance Characteristics Cies Coes Cres = V, f = MHz.5 3 V CE, CollectorEmitter Voltage[V] Fig 9. TurnOff Characteristics vs. Gate Resistance 3 = 3V, = +/ 5V = A = 25 o C Toff Tf Tf Switching Time[ns] Switching Loss[mJ] = 3V, = +/ 5V = A = 25 o C R G, Gate Resistance[Ω] Fig 8. TurnOn Characteristics vs. Gate Resistance = 3V, = +/ 5V = A = 25 o C Ton Fig. Switching Loss vs. Gate Resistance Tr Eon Eoff FP7GUS6 Transfer Molded Type IGBT Module 3 6 R G, Gate Resistance[Ω]. R G, Gate Resistance[Ω] Switching Time[ns] Fig. TurnOn Characteristics vs. Collector Current = 3V, = +/ 5V = A = 25 o C Ton , Collector Current[A] Tr Switching Time[ns] Fig 2. TurnOff Characteristics vs. Collector Current = 3V, = +/ 5V = A = 25 o C Toff , Collector Current[A] Tf Tf FP7GUS6 Rev. A 6
7 Switching Loss[mJ] = 3V, = +/ 5V = A = 25 o C Eoff Eon , Collector Current[A] 5 Fig 3. Switching Loss vs. Collector Fig 5. SOA Characteristics MAX. (Pulsed) VGE, GateEmitter Voltage[V] Fig 4. Gate Charge Characteristics = V 3 V 2 V R L = 3 Ω Q g, Gate Charge[nC] Fig 6. TurnOff SOA Characteristics FP7GUS6 Transfer Molded Type IGBT Module IC, Collector Current[A] MAX. (Continuous) Single Nonrepetitive Pulse Curves must be derated linerarly with increase in temperature DC Operation us ms 5us..3 IC, Collector Current[A] Safe Operating Area = 2V, = o C V CE, CollectorEmitter Voltage[V] V CE, CollectorEmitter Voltage[V] Fig 7. RBSOA Characteristics Fig 8. Transient Thermal Impedance IC, Collector Current[A] 6 Single Nonrepetitive Pulse T J = 25 o C = 5V R G = 2.4 Ω V CE, CollectorEmitter Voltage[V] Thermal Response, Zthjc[ o C/W].. IGBT : DIODE : E Rectangular Pulse Duration[sec] FP7GUS6 Rev. A 7
8 IF, Forward Current[A] Fig 9. Forward Characteristics Common Cathode = V = 25 o C V F, Forward Voltage[V] Fig 2. Reverse Recovery Characteristics Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[xns] I F, Forward Current[A] T rr I rr T rr I rr Common Cathode di/dt = 2A/us = o C FP7GUS6 Transfer Molded Type IGBT Module FP7GUS6 Rev. A 8
9 Detailed Package Outline Drawings 23.5±.5 23.±.5 23.± ±.5 5.8±.5.±..±. (R2.75) ±.3 93.±.5 (.) (.).±.5 7.5±.3 25.±.2 35.± ±. (4 ) (4 ) (R.) (9 ) 8.4± (R.65) (5 ) 9.6±. 2.2±.3 FP7GUS6 Transfer Molded Type IGBT Module (6.5) (4.) (9.) (4.) (9.) (4.) (6.5) (7 ) 2.2±.3.4±.3 (5 ) FP7GUS6 Rev. A 9
10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS FPFS FRFET Global Power Resource SM Green FPS Green FPS eseries GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax MotionSPM OPTOLOGIC OPTOPLANAR PDP SPM PowerSPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT 3 SuperSOT 6 SuperSOT 8 SupreMOS SyncFET * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μserdes UHC Ultra FRFET UniFET VCX VisualMax DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTICOUNTERFEITING POLICY Fairchild Semiconductor Corporation's AntiCounterfeiting Policy. Fairchild's AntiCounterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of uptodate technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 28 Fairchild Semiconductor Corporation
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