Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

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SGH23N6UFD Ultra-Fast IGBT September 2 IGBT SGH23N6UFD General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses.

1 SGH23N6UFD Ultra-Fast IGBT September 2 IGBT SGH23N6UFD General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features High Speed Switching Low Saturation Voltage : V CE(sat) = 2. High Input Impedance CO-PAK, IGBT with FRD : t rr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G G C E TO-3P E Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Description SGH23N6UFD Units V CES Collector-Emitter Voltage 6 V S Gate-Emitter Voltage ± 2 V Collector T = 25 C 23 A C Collector = C 2 A M () Pulsed Collector Current 92 A I F Diode Continuous Forward = C 2 A I FM Diode Maximum Forward Current 92 A P D Maximum Power = 25 C W Maximum Power = C 4 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 Seconds 3 C Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case --.2 C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case C/W R θja Thermal Resistance, Junction-to-Ambient -- 4 C/W 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

2 Electrical Characteristics of IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 25uA V B VCES / Temperature Coeff. of Breakdown T J Voltage = V, = ma V/ C ES Collector Cut-Off Current V CE = V CES, = V ua I GES G-E Leakage Current = S, V CE = V ± na SGH23N6UFD On Characteristics (th) G-E Threshold Voltage = 2mA, V CE = V Collector to Emitter I V C, = 5V V CE(sat) Saturation Voltage = 23A, = 5V V Dynamic Characteristics C ies Input Capacitance pf V CE = 3V, = V, C oes Output Capacitance pf f = MHz C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V,, ns t f Fall Time R G = 23Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V,, -- 2 ns t f Fall Time R G = 23Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj Q g Total Gate Charge nc V CE = 3 V,, Q ge Gate-Emitter Charge -- 7 nc = 5V Q gc Gate-Collector Charge nc L e Internal Emitter Inductance Measured 5mm from PKG nh Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = 25 C = C V t rr Diode Reverse Recovery Time = 25 C = C ns I rr Q rr Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge I F, di/dt = 2A/us = 25 C = C = 25 C = C A nc 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

3 Collector Current, I C V 5V 2V = V Collector Current, I C = 5V SGH23N6UFD Fig. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Collector - Emitter Voltage, V CE = 5V 24A 2A = 6A Load Current = 3V Load Current : peak of square wave Duty cycle : 5% = Power Dissipation = 2W. Case Temperature, [ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 2 2 Collector - Emitter Voltage, V CE = 6A 24A 2A = 6A 2A 24A Gate - Emitter Voltage, Gate - Emitter Voltage, Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

4 Capacitance [pf] Cies Coes = V, f = MHz 2 = 3V, Ton Tr SGH23N6UFD 2 Cres 3 2 Gate Resistance, R G [Ω] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance = 3V, 5 2 Gate Resistance, R G [Ω] Switching Loss [uj] = 3V, 3 2 Gate Resistance, R G [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig. Switching Loss vs. Gate Resistance 2 = 3V, R G = 23Ω Ton = 3V, R G = 23Ω Tr Collector Current, Collector Current, Fig. Turn-On Characteristics vs. Collector Current Fig 2. Turn-Off Characteristics vs. Collector Current 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

5 Switching Loss [uj] = 3V, R G = 23Ω Gate - Emitter Voltage, V GE [ V ] R L = 25 Ω 3 V = V 2 V SGH23N6UFD Collector Current, Gate Charge, Q g [ nc ] Fig 3. Switching Loss vs. Collector Current Fig 4. Gate Charge Characteristics 3 2 IC MAX. (Pulsed) Collector Current, IC MAX. (Continuous) DC Operation us 5us Single Nonrepetitive Pulse TC Curves must be derated linearly with increase in temperature..3 ms Collector Current, I C Safe Operating Area = 2V, =. Collector-Emitter Voltage, VCE Collector-Emitter Voltage, V CE Fig 5. SOA Characteristics Fig 6. Turn-Off SOA Characteristics 5 Thermal Response, Zthjc [ /W] single pulse Rectangular Pulse Duration [sec] Pdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + Fig 7. Transient Thermal Impedance of IGBT 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

6 Forward Current, I F = Reverse Recovery Current, I rr V R = 2V I F = SGH23N6UFD 2 3 Forward Voltage Drop, V FM di/dt [A/us] Fig 8. Forward Characteristics Fig 9. Reverse Recovery Current Stored Recovery Charge, Q rr [nc] V R = 2V I F = Reverce Recovery Time, t rr [ns] V R = 2V I F = di/dt [A/us] di/dt [A/us] Fig 2. Stored Charge Fig 2. Reverse Recovery Time 2 Fairchild Semiconductor International SGH23N6UFD Rev. A

7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS EnSigna FACT FACT Quiet Series FAST FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2 Fairchild Semiconductor International Rev. F

Features. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T SGH5N6RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.