FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

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FGPF7N6RUFD 6V, 7A RUF IGBO-PAK Features High speed switching Low saturation voltage : V CE(sat) =.95 V @ High input impedance CO-PAK, IGBT with FRD : t rr = 5 ns (typ.

1 FGPF7N6RUFD 6V, 7A RUF IGBO-PAK Features High speed switching Low saturation voltage : V CE(sat) =.95 High input impedance CO-PAK, IGBT with FRD : t rr = 5 ns (typ.) Short Circuit rated, = C, =5V, V CE =3V Applications Motor controls and general purpose inverters. Description October 26 Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.the device is designed for Motor applications where ruggedness is a required feature. C Absolute Maximum Ratings Symbol Description FGP7N6RUFD Units V CES Collector-Emitter Voltage 6 V S Gate-Emitter Voltage ± 2 V Collector = 25 C 4 A Collector = C 7 A M () Pulsed Collector Current 2 A I F Diode Continuous Forward = C 2 A I FM Diode Maximum Forward Current 6 A P D Maximum Power = 25 C 4 W Maximum Power = C 6 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics TO-22F.Gate 2.Collector 3.Emitter 3 C Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case C/W R θja Thermal Resistance, Junction-to-Ambient C/W G E 26 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information Device Marking Device Package Packaging Type Electrical Characteristics of the IGBT = 25 C unless otherwise noted Qty per Tube FGPF7N6RUFD FGPF7N6RUFDTU TO-22F Rail / Tube 5ea - Max Qty per Box Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 25uA V B VCES / T J Temperature Coefficient of Breakdown Voltage = V, = 3mA V/ C ES Collector Cut-Off Current V CE = V CES, = V ua I GES G-E Leakage Current = S, V CE = V ± na On Characteristics (th) G-E Threshold Voltage = 7mA, V CE = V V CE(sat) Collector to Emitter Saturation Voltage, = 5V V, = 5V, = 25 C V = 4 A, = 5V V Dynamic Characteristics C ies Input Capacitance V CE = 3V, = V, pf C oes Output Capacitance f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V CC = 3 V,, ns t r Rise Time R G = 3Ω, = 5V, Inductive Load, = 25 C ns t d(off) Turn-Off Delay Time ns t f Fall Time ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time V CC = 3 V, = 7 A, ns t r Rise Time R G =3Ω, = 5V, Inductive Load, = 25 C ns t d(off) Turn-Off Delay Time ns t f Fall Time ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge V CE = 3 V,, nc Q ge Gate-Emitter Charge = 5V nc Q gc Gate-Collector Charge -- 5 nc L e Internal Emitter Inductance Measured 5mm from PKG nh 2

3 Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = 25 C V t rr Diode Reverse Recovery Time I F di/dt = 2 A/µs = C = 25 C ns = C I rr Diode Peak Reverse Recovery Current = 25 C A = C Q rr Diode Reverse Recovery Charge = 25 C nc = C

4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, 4 2V 5V 2V 3 2 V = 8V Collector-Emitter Voltage, V CE Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level Collector Current, I C Figure 2. Typical Saturation Voltage Characteristics Com m on Em itter = 5V T c T c = 25 o C Collector-Emitter Voltage, V CE Figure 4. Load Current vs Frequency 4 Commom Emitter = 5V 5 Vcc = 3V load Current : peak of square wave Collector - Emitter Voltage, V CE IC = 4 A 3 IC = 7 A 2 IC =3.5 A Load Current 5 Duty cycle : 5% Tc = o C Power Dissipation = 4W. Case Temperature, Tc [ o C] Frequency [khz] Figure 5. Saturation Voltage vs. Vge Figure 6. Saturation Voltage vs. Vge Collector - Emitter Voltage, V CE A 7A 2 IC =3.5A Gate - Emitter Voltage, Collector - Emitter Voltage, V CE A 7A 2 Ic=3.5A Gate - Emitter Voltage, 4

5 Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate Temperature at Variant Current Level Resistance Capacitance [pf] Ciss Coss Crss = V, f = MHz Collector-Emitter Voltage, V CE Figure 9. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] V CC = 3V, = +/-5V Ton Gate Resistance, R G [Ω ] Figure. Switching Loss vs. Gate Resistance Tr Switching Time [ns] V CC = 3V, = +/-5V Toff Tf Toff Switching Loss [uj] V CC = 3V, = +/-5V Eon Eoff Eon Tf Eoff Gate Resistance, R G [Ω] Gate Resistance, R G [Ω ] Figure. Turn-On Characteristics vs. Collector Current Figure 2. Turn-Off Characteristics vs. Collector Current Switching Time [ns] = +/-5V, R G =3Ω Ton Tr Switching Time [ns] = +/-5V, R G =3Ω Toff Tf Toff 2 Tf Collector Current, Collector Current, 5

6 Typical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [uj] = +/-5V, R G =3Ω Figure 5. SOA Characteristics Eoff Eon Eoff Collector Current, Figure 4. Gate Charge Characteristics Gate-Emitter Voltage, 5 5 R L = 43 ohm Vcc = V 2V 3V Gate Charge, Q g [nc] Ic MAX (Pulsed) Collector Current, Ic.. Ic MAX (Continuous) Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature DC Operation ms µs 5µs. Collector - Emitter Voltage, V CE Figure 6. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] sin g le pu lse. E-5 E-4 E-3.. Pdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + Rectangular Pulse Duration [sec] 6

7 Typical Performance Characteristics (Continued) Figure 7. Forward Voltage Characteristics Forward Current, I F T C = o C Forward Voltage, V F Figure 9. Stored Charge Reverse Recovery Current, I rr Figure 8. Reverse Recovery Current 3. di/dt=2a/us di/dt=a/us Forward Current, I F Figure 2. Reverse Recovery Time 8 6 Reverse Recovery Charge, Q rr [nc] di/dt=2a/us di/dt=a/us Reverse Recovery Time, t rr [ns] 5 4 di/dt=a/us di/dt=2a/us Forward Current, I F Forward Current, I F Dimensions in Millimeters 7

8 Mechanical Dimensions 3.3 ±. 5.8 ±.2.6 ±.2 TO-22F ø3.8 ±. (7.) (.7) 6.68 ±.2 (.x45 ) 2.54 ± ± ±.3 MAX.47.8 ±. (3 ).35 ±. # ± TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ± ±.2 8

9 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FAST FASTr FPS FRFET FACT Quiet Series GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction