FGH40N120AN 1200V NPT IGBT

Transcription

1 FGHN2AN 2V NPT IGBT Features High speed switching Low saturation voltage : V CE(sat) = 2.6 = A High input impedance RoHS complaint Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description July 28 IGBT Employing NPT technology, Fairchild s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Parameter FGHN2AN Units V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage ±25 V Collector 6 A Collector = C A M() Pulsed Collector Current 6 A Maximum Power 7 W P D Maximum Power = C 67 W SCWT Short Circuit Withstand Time, V CE = 6V, = 5V, = 25 C µs T J Operating Junction Temperature -55 to +5 C T STG Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 seconds 3 C Notes: () Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case --.3 C/W R θja Thermal Resistance, Junction-to-Ambient -- C/W 26 Fairchild Semiconductor Corporation FGHN2AN Rev. A2

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGHN2AN FGHN2AN TO Electrical Characteristics of the IGBT unless otherwise noted Symbol Parameter Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = ma V BV CES / T J Temperature Coefficient of Breakdown Voltage = V, = ma V/ C ES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V ±25 na On Characteristics (th) G-E Threshold Voltage = 25µA, V CE = V V CE(sat) Collector to Emitter Saturation Voltage = A, = 5V V = A, = 5V, = 25 C V = 6A, = 5V V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, = V f = MHz pf c res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6V, = A, ns t f Fall Time R G = 5Ω, = 5V, -- 8 ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6V, = A, ns t f Fall Time R G = 5Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate charge nc Q ge Gate-Emitter Charge V CE = 6V, = A, = 5V nc Q gc Gate-Collector Charge nc FGHN2AN Rev. A2 2

3 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, V 7V 5V 2V = V Figure 2. Typical Saturation Voltage Characteristics Collector Current, = 5V = 25 o C = 25 o C Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level = 5V 8A A = 2A Case Temperature, [ C] 2 6 Figure. Load Current vs. Frequency Load Current 7 V CC = 6V load Current : peak of square wave Duty cycle : 5% T = o C C Powe Dissipation = W. Frequency [khz] Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs. 2 2 = 25 C A A = 2A A A = 2A Gate-Emitter Voltage, Gate-Emitter Voltage, FGHN2AN Rev. A2 3

4 Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Capacitance [pf] Ciss Coss Crss = V, f = MHz Figure 8. Turn-On Characteristics vs. Gate Resistance tr td(on) V CC = 6V, = ±5V = A = 25 C Gate Resistance, R G [Ω] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure. Switching Loss vs. Gate Resistance V CC = 6V, = ±5V, = A = 25 C td(off) tf Switching Loss [mj] V CC = 6V, = ±5V = A = 25 C Eon Eoff Gate Resistance, R G [Ω] Figure. Turn-On Characteristics vs. Collector Current Gate Resistance, R G [Ω] Figure 2. Turn-Off Characteristics vs. Collector Current = ±5V, R G = 5Ω = 25 C tr = ±5V, R G = 5Ω = 25 C td(off) td(on) tf Collector Current, Collector Current, FGHN2AN Rev. A2

5 Typical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [mj] = ±5V, R G = 5Ω = 25 C Eon Eoff Figure. Gate Charge Characteristics Gate-Emitter Voltage, R L = 5Ω Vcc = 2V V 6V Collector Current, Gate Charge, Q g [nc] Figure 5. SOA Characteristics Figure 6. Turn-Off SOA Collector Current, Ic 5. MAX (Pulse) MAX (Continuous) DC Operation *Notes:. = 25 o C µs ms ms µs 2. T J = 5 o C 3. Single Pulse. 2 Collector Current, Safe Operating Area = 5V, = 25 o C Figure 7. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] P DM.2 t. t 2 single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + E-3 E-5 E- E-3.. Rectangular Pulse Duration [sec] FGHN2AN Rev. A2 5

6 Mechanical Dimensions TO-27AB (FKS PKG CODE ) Dimensions in Millimeters FGHN2AN Rev. A2 6

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