Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7
|
|
- Laureen Henry
- 5 years ago
- Views:
Transcription
1 Features High Speed Switching, t rr < I F = A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits November 007 0A, 600V Ultrafast Rectifier The is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. It s low stored charge and ultrarfast soft recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching, thus reducing power loss in the switching transistors. tm 3 TO0F 3. Anode. Cathode 3. Anode Absolute Maximum Ratings unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 600 V V RWM Working Peak Reverse Voltage 600 V V R DC Blocking Voltage 600 V I F(AV) Average Rectified Forward T C = 3 o C A I FSM Nonrepetitive Peak Surge Current 60Hz Single HalfSine Wave 50 A T J, T STG Operating and Storage Temperature Range 65 to +50 o C Thermal Characteristics Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F0UP60DN TU TO0F Fairchild Semiconductor Corporation
2 Electrical Characteristics unless otherwise noted V FM I RM Symbol Parameter Min. Typ. Max. Units I F = A I F = A V R = 600V V R = 600V t rr I F = A, di/dt = 00A/µs, V R = 390V ns t rr I rr I F = A, di/dt = 0A/µs, V R = V Q rr W AVL Avalanche Energy ( L = 0mH) mj Notes: : Pulse: Test Pulse width = 0µs, Duty Cycle = % V µa ns A nc Test Circuit and Waveforms
3 Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current Forward Current, I F Reverse Current, I R [na] Figure. Typical Reverse Current vs. Reverse Voltage T C = 5 o C Forward Voltage, V F Reverse Voltage, V R Figure 3. Typical Junction Capacitance Capacitances, Cj [pf] Typical Capacitance at 0V = pf Reverse Recovery Time, t rr [ns] Figure. Typical Reverse Recovery Time vs. di/dt T C = 0 o C Reverse Voltage, V R di/dt [A/µs] Figure 5. Typical Reverse Recovery Current vs. di/dt Figure 6. Forward Current Derating Curve 0 Reverse Recovery Current, I rr 8 6 Average Forward Current, I F(AV) di/dt [A/µs] Case temperature, T C [ o C] 3
4 Mechanical Dimensions 3. ±0. TO0F.6 ±0.0 ø3.8 ±0..5 ±0.0 (7.00) (0.70) 5.80 ± ±0.0 (.00x5 ) 5.87 ± ±0. MAX ±0. ( ) 0.35 ±0. # ±0.0.5TYP [.5 ±0.0].5TYP [.5 ±0.0] 9.0 ± ±0.0 Dimensions in Millimeters
5 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS eseries GTO ilo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionSPM OPTOLOGIC OPTOPLANAR PDPSPM Power0 Power7 POWEREDGE PowerSPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT 3 SuperSOT 6 SuperSOT 8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms tm This datasheet contains the design specifications for product Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I3 5
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 1.
Features High Speed Switching, t rr < ns @ I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power
More informationFFH60UP60S, FFH60UP60S3
Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationFFH60UP40S, FFH60UP40S3
FFH60UP40S, FFH60UP40S3 Features High Speed Switching, t rr < 85ns @ I F = 60A High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationFFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted
FFD08S60S_F085 Features High Speed Switching (Max. t rr
More informationFFPF30UA60S UItrafast Rectifier
FFPF3UA6S UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost
More informationFFA60UA60DN UItrafast Rectifier
FFA6UA6DN UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost
More informationOctober 2008 SuperFET TM FFB10UP20S Ultrafast Recovery Power Rectifier. Applications
FFBUP0S Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 5 High Reverse Voltage : V RRM = 00V Avalanche Energy Rated Planar Cotruction RoHS Compliant Applicatio Output Rectifiers
More informationFFH60UP60S, FFH60UP60S3
Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationFFA30UP20DN Ultrafast Recovery Power Rectifier
FFA3UP2DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = 5A) High Reverse Voltage : V RRM = 2V Avalanche Energy Rated Planar Cotruction Applicatio Output Rectifiers
More informationFFPF20UP20DP Ultrafast Recovery Power Rectifier
FFPF20UP20DP Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = A) High Reverse Voltage : V RRM = 200V Enhanced Avalanche Energy Rated Planar Cotruction Applicatio
More informationFFA60UP30DN Ultrafast Recovery Power Rectifier
FFA60UP30DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 55 High Reverse Voltage : V RRM = 300V Avalanche Energy Rated Planar Cotruction Applicatio General purpose Switching
More informationFDP V N-Channel PowerTrench MOSFET
FDP27 250V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More informationFQA11N90C_F V N-Channel MOSFET
FQA11N90C_F109 900V N-Channel MOSFET Features 11A, 900V, R DS(on) = 1.1Ω @ = 10 V Low gate charge ( typical 60 nc) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFDP V N-Channel PowerTrench MOSFET
FDP2614 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 60 V V GSS Gate to Source Voltage ±20 V
FDP80N06 N-Channel MOSFET 60V, 80A, 0mΩ Features R DS(on) = 8.5mΩ ( Typ.)@ V GS = 0V, I D = 40A Low gate charge(typ. 57nC) Low C rss (Typ. 45pF) Fast switching Improved dv/dt capability RoHS compliant
More informationRHRP A, 600V Hyperfast Diodes
RHRP3060 30A, 600V Hyperfast Diodes Features Hyperfast with Soft Recovery...
More informationMMBT2369 / PN2369 NPN Switching Transistor
MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 C B E SOT-23 Mark: 1J PN2369
More informationFDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description
FDP047N N-Channel PowerTrench MOSFET 0V, 164A, 4.7mΩ Description R DS(on) = 3.9mΩ ( Typ.) @ V GS = V, I D = 75A Fast switching speed Low gate charge High performance trench technology for extremely low
More informationFJA4310 NPN Epitaxial Silicon Transistor
FJA43 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter October 28 FJA43 NPN Epitaxial
More informationFQH8N100C 1000V N-Channel MOSFET
FQH8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53nC) Low C rss (typical 16pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS
More informationRURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURD2, RURD2S Data Sheet January 22 A, 2V Ultrafast Diodes The RURD2 and RURD2S are ultrafast diodes with soft recovery characteristics ( < 7ns). They have low forward voltage drop and are silicon nitride
More informationData Sheet January Features. Packaging
RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes
More informationFDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ
FDMJC Dual N & P-Channel PowerTrench MOSFET N-Channel: V,.A, 9mΩ P-Channel: -V, -.5A, mω Features : N-Channel Max r DS(on) = 9mΩ at V GS =.5V, I D =.A Max r DS(on) = mω at V GS =.5V, I D =.5A : P-Channel
More informationRHRP1540, RHRP A, 400 V V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRP4, RHRP6 Data Sheet November 23 A, 4 V - 6 V, Hyperfast Diode The RHRP4, RHRP6 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon
More informationPackage Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP2N50 FDP2N
FDP2N50 / FDPF2N50 N-Channel MOSFET 500V,.5A, 0.65Ω Features R DS(on) = 0.55Ω (Typ.)@ V GS = 0V, I D = 6A Low gate charge ( Typ. 22nC) Low Crss ( Typ. pf) Fast switching 00% avalanche tested Improved dv/dt
More informationKSD882 NPN Epitaxial Silicon Transistor
KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing Complement to KSB772. Absolute Maximum Ratings* T a = 25 C unless otherwise
More informationFGH40N120AN 1200V NPT IGBT
FGHN2AN 2V NPT IGBT Features High speed switching Low saturation voltage : V CE(sat) = 2.6 V @ = A High input impedance RoHS complaint Applications Induction Heating, UPS, AC & DC motor controls and general
More informationFeatures. 6A, 600V Hyperfast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet May 2013
RHRD66S9A_F85 Data Sheet May 23 6A, 6V Hyperfast Diodes The RHRD66S9A_F85 is hyperfast diodes with soft recovery characteristics ( < 3ns). It has half the recovery time of ultrafast diodes and are silicon
More informationFJPF13009 NPN Silicon Transistor
FJPF3009 NPN Silicon Transistor High oltage Switch Mode Application High oltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply December 2007 FJPF3009 NPN Silicon
More informationRURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013
RURG32CC Data Sheet November 23 3 A, 2 V, Ultrafast Dual Diode Description The RURG32CC is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor. Symbol Parameter Value Units. Symbol Parameter Value Units
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More information2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: = -15A High Power Dissipation : 130watts
More informationBAV23S Small Signal Diode
BAV2S Small Signal Diode 2 L0 September 2006 tm Connection Diagram 1 1 2 SOT-2 1 2 Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter Value Unit V RRM Maximum Repetitive Reverse
More informationData Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM
RURP32 Data Sheet January 22 3A, 2V Ultrafast Diode The RURP32 is an ultrafast diode (t rr < 45ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride
More information2SC5242/FJA4313 NPN Epitaxial Silicon Transistor
2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: I C = 15A High Power Dissipation : 130watts
More informationRHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRG75120 Data Sheet November 2013 75 A, 1200 V, Hyperfast Diode The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon
More informationRURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURG81 Data Sheet January 22 8A, 1V Ultrafast Diode The RURG81 is an ultrafast diode with soft recovery characteristics (t rr < 125ns). It has low forward voltage drop and is of silicon nitride passivated
More informationRHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRG32 Data Sheet November 23 3 A, 2 V, Hyperfast Diode The RHRG32 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated
More informationFDP150N10 N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features
FDP50N N-Channel PowerTrench MOSFET 0V, 57A, 5mΩ Features R DS(on) = 2mΩ ( Typ.) @ V GS = V, I D = 49A Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on)
More informationDescription. TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode
FFPF3UP2S 3 A, 2 V, Ultrafast Diode Features Ultrafast Recovery t rr = 5 (@ I F = 3 A) Max Forward Voltage, V F =.5 V (@ = 25 C) Reverse Voltage, V RRM = 2 V Avalanche Energy Rated RoHS Compliant Description
More informationFFD10UP20S 10 A, 200 V, Ultrafast Diode
FFDUPS A, V, Ultrafast Diode Features Ultrafast Recovery, T rr =.8 ns (@ I F = A) Max Forward Voltage, V F =.5 V (@ T C = 5 C) Reverse Voltage : V RRM = V Avalanche Energy Rated RoHS Compliant Applications
More informationFYP2010DN Schottky Barrier Rectifier
FYP20DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection.anode August 2009 FYP20DN Schottky Barrier Rectifier
More informationFeatures. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM
RURD2CCS9A Data Sheet November 23 2 A, 2 V, Ultrafast Dual Diode The RURD2CCS9A is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes
More informationISL9R860P2, ISL9R860S2, ISL9R860S3ST
ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The
More informationMUR840, MUR860, RURP840, RURP860
MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated
More informationFDZ V N-Channel PowerTrench BGA MOSFET
FDZ7296 3V N-Channel PowerTrench BGA MOSFET General Description Combining Fairchild s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and R DS(ON).
More informationFDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDD8447L 4V N-Channel PowerTrench MOSFET 4V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at V GS = V, I D = 4A Max r DS(on) =.mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant G S D-PAK TO-252 (TO-252)
More informationRHRP860_F085. Features. 8A,600V Hyperfast Diodes. Applications. Ordering Information. Packaging. Symbol K. Data Sheet September 2011
Data Sheet September A,V Hyperfast Diodes The is hyperfast diodes with soft recovery characteristics ( < ). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted
More informationFeatures. Q1: N-Channel 7.0A, 30V. R DS(on) Q2: P-Channel. -5A, -30V R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q1 Q2 Units
Dual N & P-Channel PowerTrench MOSFET April 2 tm General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench
More informationTIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor
TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor Medium Power Linear Switching Applications Complementary to TIP120/121/122 Absolute Maximum Ratings* T a = 25 C unless otherwise noted October 2008
More information2SC3503/KSC3503 NPN Epitaxial Silicon Transistor
2SC353/KSC353 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : V CEO = 3V Low Reverse
More informationFDP79N15 / FDPF79N15 150V N-Channel MOSFET
FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features 79A, 150V, R DS(on) = 0.03Ω @V GS = 10 V Low gate charge ( typical 56 nc) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability Description
More informationFDZ2554P. FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench BGA MOSFET
FDZ24P June 07 Monolithic Common Drain P-Channel 2.V Specified Power Trench BGA MOSFET -V, -6.A, 28mΩ Features Max r DS(on) = 28mΩ at V GS = -4.V, I D = -6.A Max r DS(on) = 4mΩ at V GS = -2.V, I D = -A
More informationFDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
More informationTIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor
TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP5/6/7 High DC Current Gain : h FE =0 @ CE =4, I C =A(Min.)
More informationISL9R3060G2, ISL9R3060P2
ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth
More informationLL4148 Small Signal Diode
LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black April 2013 SOD80 The 1st Band indicates the cathode band Package Marking and Ordering Information Device Marking Device Package
More informationFFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C
FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +
More informationFDC6901L Integrated Load Switch
FDC6901L Integrated Load Switch Features Three Programmable Slew Rates Reduces Inrush Current Minimizes EMI Normal Turn-Off Speed Low-Power CMOS Operates Over Wide Voltage Range High Performance Trench
More informationMJD44H11 NPN Epitaxial Silicon Transistor
MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application
More informationDescription. 300 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +175 C
FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Features Ultrafast Recovery, T rr = 55 (@I F = 30 A) Max. Forward Voltage, V F =.5 V (@ = 25 C) Reverse Voltage: V RRM = 300 V Avalanche Energy Rated RoHS
More informationANODE 2 CATHODE ANODE 1
ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low
More informationAbsolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit
MMBT2222AT NPN Epitaxial Silicon Transistor Features General purpose amplifier transistor. Ultra-Small Surface Mount Package for all types. General purpose switching & amplification application September
More information1N4934-1N4937 Fast Rectifiers
N4934 - N4937 Fast Rectifiers Features Low Forward Voltage Drop High Surge Current Capability High Reliability High Current Capability DO-4 COLOR BAND DENOTES CATHODE January 25 N4934 - N4937 Fast Rectifiers
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFFP08H60S 8 A, 600 V, Hyperfast II Diode
FFP8H6S 8 A, 6 V, Hyperfast II Diode Features Hyperfast Recovery t rr = 45 (@ I F = 8 A) Max Forward Voltage, V F =.6 V (@ = 5 C) 6 V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
More information2SA1381/KSA1381 PNP Epitaxial Silicon Transistor
2SA38/KSA38 PNP Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : V CEO = -300V Low Reverse
More informationDescription. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
More informationFGH60N60SFD 600V, 60A Field Stop IGBT
FGH6N6SFD 6V, 6A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =2.3V @ I C = 6A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,
More informationFDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7
More informationFQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationUniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings
FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features 18A, 500V, R DS(on) = 0.265Ω @V GS = 10 V Low gate charge ( typical 45 nc) Low C rss ( typical 25 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationBAT54HT1G Schottky Barrier Diodes
BAT54HT1G Schottky Barrier Diodes 1 A2 Connection Diagram 1 July 2013 SOD-323 2 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFQA8N100C 1000V N-Channel MOSFET
FQA8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53 nc) Low C rss (typical 16 pf) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationFQA11N90 900V N-Channel MOSFET
FQA11N90 900V N-Channel MOSFET Features 11.4A, 900V, R DS(on) = 0.96Ω @ = 10 V Low gate charge ( typical 72 nc) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationMM74HC Stage Binary Counter
MM74HC4040 12-Stage Binary Counter Features Typical propagation delay: 16ns Wide operating voltage range: 2 6V Low input current: 1µA Max. Low quiescent current: 80µA Max. (74HC Series) Output drive capability:
More informationFQB7N65C 650V N-Channel MOSFET
FQB7N65C 650V N-Channel MOSFET Features 7A, 650V, R DS(on) = 1.4Ω @ = 10 V Low gate charge ( typical 28 nc) Low Crss ( typical 12 pf) Fast switching 100% avalanche tested Improved dv/dt capability RoHS
More informationFeatures. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationDescription ANODE CATHODE
ISL9R312G2 3 A, 12 V STEALTH Diode Features Stealth Recovery t rr = 269 ns (@ I F = 3 A) Max Forward Voltage, V F = 3.3 V (@ T C = 25 C) 12 V Reverse Voltage and High Reliability Avalanche Energy Rated
More informationTO Emitter 2. Collector 3. Base
KSD66/66A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB6/6A TO-92. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a =25 C unless otherwise noted November 2007 Symbol
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
More informationFGP5N60UFD 600V, 5A Field Stop IGBT
FGP5N6UFD 6V, 5A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =.9V @ I C = 5A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,
More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
More informationISL9R860P2, ISL9R860S3ST
ISL9RP, ISL9RS3ST A, V, STEALTH Diode Features Stealth Recovery trr = ns (@ IF = A) Max Forward Voltage, VF =. V (@ TC = 5 C) V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
More informationFeatures. TO-220F IRFS Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationDM74ALS257, DM74ALS258 3-STATE Quad 1-of-2-Line Data Selector/Multiplexer
DM74ALS257, DM74ALS258 3-STATE Quad 1-of-2-Line Data Selector/Multiplexer Features Switching specifications at 50pF Switching specifications guaranteed over full temperature and V CC range Advanced oxide-isolated,
More informationFDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
More informationKSD1621 NPN Epitaxial Silicon Transistor
KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking
More information1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode DO-35 Cathode is denoted with a black band LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
More informationFGPF70N33BT 330V, 70A PDP IGBT
FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) =.7V @ I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description
More informationFDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description April 2013 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass
More informationFDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More information74AC20 Dual 4-Input NAND Gate
74AC20 Dual 4-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA General Description The AC20 contains four, 4-input NAND gates. January 2008 Ordering Information Order Number Package
More informationQFET FQE10N20LC. Features. TO-126 FQE Series
200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFDC610PZ P-Channel PowerTrench MOSFET
FC6PZ P-Channel PowerTrench MOSFET 3V, 4.9A, 4mΩ Features Max r S(on) = 4mΩ at V GS = V, I = 4.9A Max r S(on) = 7mΩ at V GS = 4.V, I = 3.7A Low gate charge (7nC typical). High performance trench technology
More informationKSA473 PNP Epitaxial Silicon Transistor
KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009
More informationFDG901D Slew Rate Control IC for P-Channel MOSFETs
FDG90D Slew Rate Control IC for P-Channel MOSFETs Features Three Programmable Slew Rates Reduces Inrush Current Minimizes EMI Normal Turn-Off Speed Low-Power CMOS Operates Over Wide Voltage Range Compact
More informationApplications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V
FDD386 N-Channel PowerTrench MOSFET V, 9A, 36mΩ Features Max r DS(on) = 36mΩ at V GS = V, I D = 5.9A High performance trench technology for extremely low r DS(on) % UIL tested RoHS Compliant General Description
More information