FJA4310 NPN Epitaxial Silicon Transistor
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1 FJA43 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter October 28 FJA43 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T a = 25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 2 V O Collector-Emitter Voltage 4 V V EBO Emitter-Base Voltage 6 V Collector Current (DC) A I B Base Current (DC).5 A P C Collector Dissipation (T C =25 C) W T J Junction Temperature 5 C T STG Storage Temperature - 55 ~ 5 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage =5mA, I E = 2 V BO Collector-Emitter Breakdown Voltage =5mA, R BE = 4 V BV EBO Emitter-Base Breakdown Voltage I E =5mA, = 6 V BO Collector Cut-off Current V CB =2V, I E = ma I EBO Emitter Cut-off Current V EB =6V, = ma h FE * DC Current Gain =4V, =3A 5 8 (sat) Collector-Emitter Saturation Voltage =5A, I B =.5A.5 V C ob Output Capacitance V CB =V, f=mhz 25 pf f T Current Gain Bandwidth Product =5V, =A 3 MHz * Pulse Test: Pulse Width 3ms, Duty Cycle 2% h FE Classification Classification R O Y h FE 5 ~ 7 ~ 4 9 ~ 8 FJA43 Rev. C
2 Typical Characteristics I B = 4mA I B = 3mA I B = 25mA Figure. Static Characterstic I B = 2mA I B = 5mA [V], COLLECTOR-EMITTER VOLTAGE I B = ma I B = 5mA I B = 2mA h FE, DC CURRENT GAIN. Figure 2. DC current Gain = 4 V FJA43 NPN Epitaxial Silicon Transistor 3. = I B (sat) [V], SATURATION VOLTAGE = - 5A = - A (sat) [V], SATURATION VOLTAGE I B [A], BASE CURRENT Figure 3. (sat) vs. I B Characteristics Figure 4. Collector-Emitter Saturation Voltage = 4 V (Pulse) t=ms (DC) T C = 25 o C Single Pulse t=ms V BE [V], Base-Emitter On VOLTAGE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area FJA43 Rev. C 2
3 Typical Characteristics (Continued) P C [W], COLLECTOR POWER DISSIPATION T C [ o C], CASE TEMPERATURE Figure 7. Power Derating FJA43 NPN Epitaxial Silicon Transistor FJA43 Rev. C 3
4 Package Dimension (TO-3P) (R.5) FJA43 NPN Epitaxial Silicon Transistor (.85) (R.5) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER ASME D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILE NAME: TO3P3AREV2. FJA43 Rev. C 4
5 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power22 Power247 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX FJA43 NPN Epitaxial Silicon Transistor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FJA43 Rev. C 5 Rev. I3
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