FGH60N60SFD 600V, 60A Field Stop IGBT
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1 FGH6N6SFD 6V, 6A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) I C = 6A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS, SMPS, PFC General Description August 28 tm Using Novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units V CES Collector to Emitter Voltage 6 V V GES Gate to Emitter Voltage ± 2 V I C Collector 2 A Collector T C = o C 6 A I CM () Pulsed Collector 8 A P D Maximum Power 378 W Maximum Power T C = o C 5 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes: : Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case -.33 o C/W R θjc (Diode) Thermal Resistance, Junction to Case -. o C/W R θja Thermal Resistance, Junction to Ambient - 4 o C/W 28 Fairchild Semiconductor Corporation
2 Package Marking and Ordering Information Packaging Max Qty Device Marking Device Package Type Qty per Tube per Box FGH6N6SFD FGH6N6SFDTU TO-247 Tube 3ea - Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA V BV CES T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25µA V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V µa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE V V CE(sat) Collector to Emitter Saturation Voltage I C = 6A, V GE = 5V V I C = 6A, V GE = 5V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4V, I C = 6A, ns t f Fall Time R G = 5Ω, V GE = 5V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4V, I C = 6A, ns t f Fall Time R G = 5Ω, V GE = 5V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss -. - mj E ts Total Switching Loss mj Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 4V, I C = 6A, V GE = 5V nc Q gc Gate to Collector Charge nc 2
3 Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Units V FM Diode Forward Voltage I F = 3A V t rr Diode Reverse Recovery Time ns I ES = 3A, di ES /dt = 2A/µs Q rr Diode Reverse Recovery Charge nc
4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 2V 5V V V GE = 8V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 2V 5V V V GE = 8V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Collector Current, I C [A] Figure 4. Transfer Characteristics V CE = 2V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 2A 6A I C = 3A Collector-EmitterCase Temperature, T C [ o C] Gate-Emitter Voltage,V GE [V] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 3A 2A T C = -4 o C Gate-Emitter Voltage, V GE [V] 4
5 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 4 6A I C = 3A Gate-Emitter Voltage, V GE [V] Figure 8. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A I C = 3A 2A Gate-Emitter Voltage, V GE [V] Figure 9. Capacitance Characteristics Capacitance [pf] C ies C oes C res V GE = V, f = MHz Figure. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V V CC = V 2V Figure. SOA Characteristics Gate Charge, Q g [nc] Figure 2. Turn off Switching SOA Characteristics 3 Collector Current, Ic [A] Single Nonrepetitive µs ms ms Pulse T. C = 25 o C Curves must be derated linearly with increase in temperature. DC µs Collector Current, IC [A] Safe Operating Area V GE = 5V, 5
6 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Gate Resistance Switching Time [ns] 3 t r t d(on) V CC = 4V, V GE = 5V I C = 6A Gate Resistance, R G [Ω] Switching Time [ns] Figure 4. Turn-off Characteristics vs. Gate Resistance 6 V CC = 4V, V GE = 5V I C = 6A t d(off) Gate Resistance, R G [Ω] t f Figure 5. Turn-on Characteristics vs. Collector Current Switching Time [ns] 5 V GE = 5V, R G = 5Ω t r t d(on) Switching Time [ns] Figure 6. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω T C = 25 o C t d(off) t f Collector Current, I C [A] Figure 7. Switching Loss vs Gate Resistance Switching Loss [mj] 2 V CC = 4V, V GE = 5V I C = 6A E on E off Collector Current, I C [A] Figure 8. Switching Loss vs Collector Current Switching Loss [mj] 3 V GE = 5V, R G = 5Ω T C = 25 o C E on E off Gate Resistance, R G [Ω] Collector Current, I C [A] 6
7 Typical Performance Characteristics Figure 9. Forward Characteristics Forward Current, IF [A] 2 T J = 25 o C T J = 25 o C T J = 75 o C Forward Voltage, V F [V] Reverse Current, I R [µa] Figure 2. Reverse Current 5. T C = 75 o C Reverse Voltage, V R [V] Figure 2. Stored Charge 5 Figure 22. Reverse Recovery Time 6 Reverse Current, I R [µa]. T C = 75 o C Reverse Recovery Time, trr [ns] 5 4 2A/µs di/dt = A/µs Reverse Voltage, V R [V] Forward Current, I F [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] single pulse t 2 Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t 7
8 Mechanical Dimensions TO-247AB (FKS PKG CODE ) Dimensions in Millimeters 8
9 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire UHC Ultra FRFET UniFET VCX VisualMax * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 9
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