Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T
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1 FDGNZ Dual N-Channel PowerTrench MOSFET V,. A, 7 mω Features Max r DS(on) = 7 mω at V GS =. V, I D =. A Max r DS(on) = mω at V GS =. V, I D =. A Max r DS(on) = 7 mω at V GS =.8 V, I D =.9 A Max r DS(on) = 89 mω at V GS =. V, I D =.8 A HBM ESD protection level > kv (Note ) Very low level gate drive requirements allowing operation in. V circuits (V GS(th) < V) Very small package outline SC7- RoHS Compliant S G D General Description S D June This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. FDGNZ Dual N-Channel Power Trench MOSFET S G D G D G S SC7- MOSFET Maximum Ratings T A = C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ±8 V -Continuous T I A = C (Note a). D -Pulsed Power Dissipation T A = C (Note a). P D Power Dissipation T A = C (Note b). T J, T STG Operating and Storage Junction Temperature Range - to + C Thermal Characteristics A W R θja Thermal Resistance, Junction to Ambient (Note a) R θja Thermal Resistance, Junction to Ambient (Note b) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity.N FDGNZ SC7-7 8 mm units Fairchild Semiconductor Corporation FDGNZ Rev.C
2 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = µa, V GS = V V BV DSS Breakdown Voltage Temperature T J Coefficient I D = µa, referenced to C mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±8 V, V DS = V ± µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = µa..8. V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient I D = µa, referenced to C - mv/ C V GS =. V, I D =. A 7 V GS =. V, I D =. A 8 r DS(on) Static Drain to Source On Resistance V GS =.8 V, I D =.9 A 7 V GS =. V, I D =.8 A 89 mω V GS =. V, I D =. A, T J = C 9 g FS Forward Transconductance V DD = V, I D =. A S Dynamic Characteristics C iss Input Capacitance pf V DS = V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance. Ω FDGNZ Dual N-Channel Power Trench MOSFET Switching Characteristics t d(on) Turn-On Delay Time.7 ns t r Rise Time V DD = V, I D =. A,.7 ns t d(off) Turn-Off Delay Time V GS =. V, R GEN = Ω 9 ns t f Fall Time. ns Q g Total Gate Charge.8. nc V GS =. V, V DD = V, Q gs Gate to Source Charge. nc I D =. A Q gd Gate to Drain Miller Charge. nc Drain-Source Diode Characteristics I S Maximum Continuous Drain-Source Diode Forward Current. A V SD Source to Drain Diode Forward Voltage V GS = V, I S =. A (Note ).7. V t rr Reverse Recovery Time ns I F =. A, di/dt = A/µs Q rr Reverse Recovery Charge.9 nc NOTES:. R θja is determined with the device mounted on a in pad oz copper pad on a. x. in. board of FR- material. R θjc is guaranteed by design while R θja is determined by the user's board design. a. C/W when mounted on a in pad of oz copper. b. C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < µs, Duty cycle <.%. : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Fairchild Semiconductor Corporation FDGNZ Rev.C
3 Typical Characteristics T J = C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure. I D =. A V GS =. V V GS =. V V GS =. V V GS =. V PULSE DURATION = 8 µs DUTY CYCLE =.% MAX V DS, DRAIN TO SOURCE VOLTAGE (V) V GS =.8 V V GS =. V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8 µs DUTY CYCLE =.% MAX. On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω).... V GS =. V V GS =.8 V V GS =. V I D, DRAIN CURRENT (A) I D =. A T J = o C T J = o C V GS =. V V GS =. V PULSE DURATION = 8 µs DUTY CYCLE =.% MAX V GS, GATE TO SOURCE VOLTAGE (V) FDGNZ Dual N-Channel Power Trench MOSFET Figure. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8 µs DUTY CYCLE =.% MAX V DS = V T J = o C T J = o C T J = - o C V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A). V GS = V T J = o C T J = o C T J = - o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation FDGNZ Rev.C
4 Typical Characteristics T J = C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) I D =. A..... Figure 7. V DD = V V DD = V Q g, GATE CHARGE (nc) V DD = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage THIS AREA IS LIMITED BY r DS(on). ms ms ms. SINGLE PULSE T J = MAX RATED ms R θja = o C/W T s A = o C DC... V DS, DRAIN to SOURCE VOLTAGE (V) CAPACITANCE (pf) Ig, GATE LEAKAGE CURRENT (µa) f = MHz V GS = V VGS = V - T J = o C T J = o C C iss C oss C rss - 8 V GS, GATE TO SOURCE VOLTAGE (V) FDGNZ Dual N-Channel Power Trench MOSFET Figure 9. Forward Bias Safe Operating Area Figure. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) V GS =. V SINGLE PULSE R θja = o C/W T A = o C t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation Fairchild Semiconductor Corporation FDGNZ Rev.C
5 Typical Characteristics T J = C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = o C/W t, RECTANGULAR PULSE DURATION (sec) Figure. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A FDGNZ Dual N-Channel Power Trench MOSFET Fairchild Semiconductor Corporation FDGNZ Rev.C
6 Dimensional Outline and Pad Layout FDGNZ Dual N-Channel Power Trench MOSFET Fairchild Semiconductor Corporation FDGNZ Rev.C
7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak MillerDrive MotionMax Motion-SPM OptoHiT OPTOLOGIC OPTOPLANAR PDP SPM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. FDGNZ Dual N-Channel Power Trench MOSFET LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change in Advance Information Formative / In Design any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes No Identification Needed Full Production at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I8 Fairchild Semiconductor Corporation 7 FDGNZ Rev.C
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