FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
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1 FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture G D S I-PAK (TO-5AA) Features Max r DS(on) =.mω at V GS = V, I D = 35A November 9 Max r DS(on) = 4.mΩ at V GS = 4.5V, I D = 35A Low gate charge: Q g() = 8nC(Typ), V GS = V Low gate resistance Avalanche rated and % tested RoHS Compliant G D S Short Lead I-PAK G D S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 5 V V GS Gate to Source Voltage ± V I D -Continuous (Die Limited) 54 A Drain Current -Continuous (Package Limited) 35 -Pulsed (Note ) 3 E AS Single Pulse Avalanche Energy (Note ) 7 mj P D Power Dissipation 5 W T J, T STG Operating and Storage Temperature -55 to 75 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case TO-5,TO-5 3. C/W R θja Thermal Resistance, Junction to Ambient TO-5,TO-5 C/W R θja Thermal Resistance, Junction to Ambient TO-5,in copper pad area 5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD878 FDD878 TO-5AA 3 mm 5 units FDU878 FDU878 TO-5AA N/A(Tube) N/A 75 units FDU878 FDU878_F7 TO-5AA N/A(Tube) N/A 75 units 9 Fairchild Semiconductor Corporation FDD878/FDU878 Rev. A
2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5μA, V GS = V 5 V ΔB VDSS ΔT J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 5μA, referenced to 5 C V DS = V, V GS = V 4.3 mv/ C T J = 5 C 5 I GSS Gate to Source Leakage Current V GS = ±V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA..7.5 V ΔV GS(th) ΔT J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Dynamic Characteristics I D = 5μA, referenced to 5 C μa -6.5 mv/ C V GS = V, I D = 35A 8.5. V GS = 4.5V, I D = 35A. 4. V GS = V, I D = 35A T J = 75 C. 8. C iss Input Capacitance 9 pf V DS = 3V, V GS = V, C oss Output Capacitance 3 3 pf f = MHz C rss Reverse Transfer Capacitance 6 4 pf R g Gate Resistance f = MHz.4 Ω Switching Characteristics t d(on) Turn-On Delay Time 7 4 ns t V DD = 3V, I D = 35A r Rise Time 9 8 ns V GS = V, R GS = 9Ω t d(off) Turn-Off Delay Time 36 ns t f Fall Time 4 5 ns Q g Total Gate Charge V GS = V to V 8 5 nc Q V DD = 3V g Total Gate Charge V GS = V to 5V nc I D = 35A Q gs Gate to Source Gate Charge 3. nc I g =.ma Q gd Gate to Drain Miller Charge 4. nc mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 35A.96.5 V GS = V, I S = 5A.86. t rr Reverse Recovery Time I F = 35A, di/dt = A/μs 5 38 ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/μs 7 6 nc Notes: : Pulse time < 3us,Duty cycle = %. : Starting, L =.mh, I AS = A,V DD = 3V, V GS = V. V FDD878/FDU878 Rev. A
3 Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = V V GS = 4.5V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 3V 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I D = 35A V GS = V T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), ON-RESISTANCE (mω) V GS = 3V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 4.5V V GS = V I D, DRAIN CURRENT(A) Figure. Normalized On-Resistance vs Drain Current and Gate Voltage 4 3 I D = 5A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = -55 o C E V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD878/FDU878 Rev. A 3
4 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) Figure 7. 5 V DD = 3V V DD = 8V V DD = 8V Q g, GATE CHARGE(nC) CAPACITANCE (pf) 3 f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C... t AV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) C oss C rss R θjc = 3. o C/W V GS = V V GS = 4.5V C iss T C, CASE TEMPERATURE( o C) 3 Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 5 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED T C = 5 o C. V DS, DRAIN TO SOURCE VOLTAGE (V) us us ms ms DC 5 ), PEAK TRANSIENT POWER (W) P(PK 7 V GS = V SINGLE PULSE T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 75 T I = I C t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation FDD878/FDU878 Rev. A 4
5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE E t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C FDD878/FDU878 Rev. A 5
6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED EcoSPARK EfficientMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change in Advance Information Formative / In Design any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes No Identification Needed Full Production at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I44 8 Fairchild Semiconductor Corporation
7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDU878
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