Description TO-220F. Symbol Parameter FDPF7N50U Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
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1 FDPF7N50U N-Channel UniFET TM Ultra FRFET TM MOSFET 500 V, 5 A, 1.5 Features R DS(on) = 1.5 = 10 V, = 2.5 A Low Gate Charge (Typ.12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Improved dv/dt Capability Applications LCD/LED TV Lighting Uninterruptible Power Supply AC-DC Power Supply Description March 2013 UniFET TM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFET TM MOSFET has much superior body diode reverse recovery performance. Its t rr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S TO-220 G D S TO-220F G S Absolute Maximum Ratings Symbol Parameter FDPF7N50U Unit S Drain-Source Voltage 500 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 20 * A S Gate-Source voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 125 mj I AR Avalanche Current (Note 1) 5 A E AR Repetitive Avalanche Energy (Note 1) 8.9 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics 5 * 3.0 * A A W W/ C Symbol Parameter FDPF7N50U Unit R JC Thermal Resistance, Junction-to-Case, Max. 4.0 R JA Thermal Resistance, Junction-to-Ambient, Max C/W 2009 Fairchild Semiconductor Corporation 1
2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDPF7N50U FDPF7N50U TO-220F Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250 A V BS T J Breakdown Voltage Temperature Coefficient SS Zero Gate Voltage Drain Current = 500V, = 0V = 400V, T C = 125 C = 250 A, Referenced to 25 C V/ C I GSSF Gate-Body Leakage Current, Forward = 30V, = 0V na I GSSR Gate-Body Leakage Current, Reverse = -30V, = 0V na On Characteristics (th) Gate Threshold Voltage =, = 250 A V R DS(on) Static Drain-Source On-Resistance = 10V, = 2.5A g FS Forward Transconductance = 40V, = 2.5A S Dynamic Characteristics C iss Input Capacitance = 25V, = 0V, pf C oss Output Capacitance f = 1.0MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 250V, = 5A ns t r Turn-On Rise Time R G = ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 400V, = 5A nc Q gs Gate-Source Charge = 10V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0V, I S = 5A V t rr Reverse Recovery Time = 0V, I S = 5A ns Q rr Reverse Recovery Charge di F /dt =100A/ s C A A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 5A, V DD = 50V, L=10mH, R G = 25, Starting T J = 25 C 3. I SD 5A, di/dt 200A/ s, V DD BS, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2009 Fairchild Semiconductor Corporation 2
3 Typical Performance Characteristics R DS(ON) [ ],Drain-Source On-Resistance Figure 1. On-Region Characteristics Top : 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V s Pulse Test 2. T C = 25 o C , Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage = 10V = 20V * Note : T J = 25 o C R, Reverse Drain Current [A] Figure 2. Transfer Characteristics 25 o C 150 o C * Note : 1. = 40V s Pulse Test , Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature o C 25 o C 1. = 0V s Pulse Test V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd 12 = 100V Capacitance [pf] C iss C oss C rss C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 250V = 400V * Note : = 57 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] 2009 Fairchild Semiconductor Corporation 3
4 Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation Figure 8. Maximum Drain Current vs. Temperature Vs. Case Temperature = 0 V 2. = 250 A T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area - FDPF7N50U Operation in This Area is Limited by R DS(on) DC , Drain-Source Voltage [V] 10 us 100 us 1 ms 10 ms 100 ms 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse T C, Case Temperature [ o C] Figure 10. Transient Thermal Response Curve D=0.5 Z JC (t), Thermal Response single pulse t 1 t 2 1. Z JC (t) = 4.0 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z JC (t) t 1, Square W ave Pulse Duration [sec] P DM 2009 Fairchild Semiconductor Corporation 4
5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 2009 Fairchild Semiconductor Corporation 5
6 Peak Diode Recovery dv/dt Test Circuit & Waveforms 2009 Fairchild Semiconductor Corporation 6
7 Mechanical Dimensions TO-220M03 Dimensions in Millimeters 2009 Fairchild Semiconductor Corporation 7
8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only Fairchild Semiconductor Corporation 8 Rev. I64
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